NPN SILICON PLANAR MEDIUM POWER ZTX457 HIGH VOLTAGE TRANSISTOR ISSUE 2 MARCH 1994 FEATURES * 300 Volt V CEO * 0.5 Amp continuous current *P = 1 Watt tot C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 300 V CBO Collector-Emitter Voltage V 300 V CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current I 1A CM Continuous Collector Current I 500 mA C Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 300 V I =100A, I =0 (BR)CBO C E Breakdown Voltage Collector-Emitter V 300 V I =10mA, I =0* CEO(sus) C B Breakdown Voltage Emitter-Base V5V I =100A (BR)EBO E Breakdown Voltage Collector Cut-Off I 100 nA V =200V CBO CB Current 10 A V =200V, T =100C CB amb Emitter Cut-Off Current I 100 nA V =4V EBO EB Collector-Emitter V 0.3 V I =100mA, I =10mA* CE(sat) C B Saturation Voltage Base-Emitter V 1V I =100mA, I =10mA* BE(sat) C B Saturation Voltage Base-Emitter V 1 V IC=100mA, V =10V* BE(on) CE Turn On Voltage Static Forward Current h 50 I =10mA, V =10V* FE C CE Transfer Ratio 50 300 I =50mA, V =10V* C CE 25 I =100mA, V =10V* C CE Transition Frequency f 75 MHz I =50mA, V =10V T C CE f=20MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-181