VBE - (Volts) hFE - Normalised Gain VCE(sat) - (Volts) IC - Collector Current (Amps) BE(sat) - (V V olts) V (sat) CE - (Volts) NPN SILICON PLANAR MEDIUM POWER ZTX458 ZTX458 HIGH VOLTAGE TRANSISTOR ISSUE 2 MARCH 1994 FEATURES TYPICAL CHARACTERISTICS * 400 Volt V CEO * 0.5 Amp continuous current -55C *P = 1 Watt IC/IB=10 IC/IB=10 Tamb=25C +25C tot 1.6 IC/IB=20 1.6 +100C IC/IB=50 +175C 1.4 1.4 C 1.2 1.2 B E 1.0 1.0 0.8 E-Line 0.8 0.6 TO92 Compatible 0.6 ABSOLUTE MAXIMUM RATINGS. 0.4 0.4 PARAMETER SYMBOL VALUE UNIT 0.2 0.2 Collector-Base Voltage V 400 V CBO 0 0 0.001 0.01 0.1 110 20 0.001 0.01 0.1 110 20 Collector-Emitter Voltage V 400 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V 5V EBO VCE(sat) v IC VCE(sat) v IC Continuous Collector Current I 300 mA C Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg -55C +100C V =10V IC/IB=10 ELECTRICAL CHARACTERISTICS (at T = 25C). CE +25C amb 1.6 +25C 1.6 +100C 300 -55C +175C PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 1.4 1.4 1.2 1.2 Collector-Base V 400 V I =100A (BR)CBO C 1.0 200 Breakdown Voltage 1.0 0.8 0.8 Collector-Emitter V 400 V I =10mA* CEO(sus) C 0.6 0.6 Breakdown Voltage 100 0.4 0.4 Emitter-Base V5V I =100A (BR)EBO E 0.2 0.2 Breakdown Voltage 0 0 0.001 0.01 0.1 10 20 1 Collector Cut-Off I 100 nA V =320V 0.001 0.01 0.1 110 20 CBO CB Current IC - Collector Current (Amps) IC - Collector Current (Amps) Collector Cut-Off I 100 nA VCE=320V CES hFE v IC VBE(sat) v IC Current Emitter Cut-Off Current I 100 nA V =4V Single Pulse Test at Tamb=25C EBO EB 1.0 Collector-Emitter V 0.2 V I =20mA, I =2mA CE(sat) C B -55C VCE=10V +25C Saturation Voltage 0.5 V I =50mA, I =6mA 1.6 C B +100C +175C 1.4 Base-Emitter V 0.9 V I =50mA, I =5mA BE(sat) C B 0.1 Saturation Voltage 1.2 1.0 Base-Emitter V 0.9 V IC=50mA, V =10V BE(on) CE D.C. Turn On Voltage 0.8 1s 100ms 10ms 0.6 Static Forward Current h 100 I =1mA, V =10V 1.0ms FE C CE 0.01 0.4 0.1ms Transfer Ratio 100 300 I =50mA, V =10V C CE 15 I =100mA, V =10V* 0.2 C CE 0 Transition Frequency f 50 MHz I =10mA, V =20V T C CE 0.001 0.01 0.1 110 20 0.001 f=20MHz 110 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) Collector-Base C 5pF V =20V, f=1MHz obo CB Breakdown Voltage VBE(on) v IC Safe Operating Area 3-183 3-182 VBE - (Volts) hFE - Normalised Gain VCE(sat) - (Volts) IC - Collector Current (Amps) BE(sat) - (V V olts) V (sat) CE - (Volts) NPN SILICON PLANAR MEDIUM POWER ZTX458 ZTX458 HIGH VOLTAGE TRANSISTOR ISSUE 2 MARCH 1994 FEATURES TYPICAL CHARACTERISTICS * 400 Volt V CEO * 0.5 Amp continuous current -55C *P = 1 Watt IC/IB=10 IC/IB=10 Tamb=25C +25C tot 1.6 IC/IB=20 1.6 +100C IC/IB=50 +175C 1.4 1.4 C 1.2 1.2 B E 1.0 1.0 0.8 E-Line 0.8 0.6 TO92 Compatible 0.6 ABSOLUTE MAXIMUM RATINGS. 0.4 0.4 PARAMETER SYMBOL VALUE UNIT 0.2 0.2 Collector-Base Voltage V 400 V CBO 0 0 0.001 0.01 0.1 110 20 0.001 0.01 0.1 110 20 Collector-Emitter Voltage V 400 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V 5V EBO VCE(sat) v IC VCE(sat) v IC Continuous Collector Current I 300 mA C Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg -55C +100C V =10V IC/IB=10 ELECTRICAL CHARACTERISTICS (at T = 25C). CE +25C amb 1.6 +25C 1.6 +100C 300 -55C +175C PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 1.4 1.4 1.2 1.2 Collector-Base V 400 V I =100A (BR)CBO C 1.0 200 Breakdown Voltage 1.0 0.8 0.8 Collector-Emitter V 400 V I =10mA* CEO(sus) C 0.6 0.6 Breakdown Voltage 100 0.4 0.4 Emitter-Base V5V I =100A (BR)EBO E 0.2 0.2 Breakdown Voltage 0 0 0.001 0.01 0.1 10 20 1 Collector Cut-Off I 100 nA V =320V 0.001 0.01 0.1 110 20 CBO CB Current IC - Collector Current (Amps) IC - Collector Current (Amps) Collector Cut-Off I 100 nA VCE=320V CES hFE v IC VBE(sat) v IC Current Emitter Cut-Off Current I 100 nA V =4V Single Pulse Test at Tamb=25C EBO EB 1.0 Collector-Emitter V 0.2 V I =20mA, I =2mA CE(sat) C B -55C VCE=10V +25C Saturation Voltage 0.5 V I =50mA, I =6mA 1.6 C B +100C +175C 1.4 Base-Emitter V 0.9 V I =50mA, I =5mA BE(sat) C B 0.1 Saturation Voltage 1.2 1.0 Base-Emitter V 0.9 V IC=50mA, V =10V BE(on) CE D.C. Turn On Voltage 0.8 1s 100ms 10ms 0.6 Static Forward Current h 100 I =1mA, V =10V 1.0ms FE C CE 0.01 0.4 0.1ms Transfer Ratio 100 300 I =50mA, V =10V C CE 15 I =100mA, V =10V* 0.2 C CE 0 Transition Frequency f 50 MHz I =10mA, V =20V T C CE 0.001 0.01 0.1 110 20 0.001 f=20MHz 110 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) Collector-Base C 5pF V =20V, f=1MHz obo CB Breakdown Voltage VBE(on) v IC Safe Operating Area 3-183 3-182