IC - Collector Current (Amps) VBE - (Volts) VCE(sat) - (Volts) VBE(sat) - (Volts) hFE - Normalised Gain (%) PNP SILICON PLANAR ZTX550 ZTX550 MEDIUM POWER TRANSISTORS ZTX551 ZTX551 ISSUE 1 MARCH 94 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO * 1 Amp continuous current 100 -0.8 *P = 1 Watt tot 80 -0.6 C ZTX551 ZTX550 B 60 E -0.4 ZTX551 40 E-Line IC/IB=10 TO92 Compatible -0.2 20 ABSOLUTE MAXIMUM RATINGS. 0 PARAMETER SYMBOL ZTX550 ZTX551 UNIT -0.01 -0.1 -1 -10 -0.001 -0.01 -0.1 -1 -10 Collector-Base Voltage V -60 -80 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V -45 -60 V CEO VCE(sat) v IC hFE v IC Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Power Dissipation: at T =25C P 1 W amb tot -1.0 -1.4 derate above 25C 5.7 mW/ C Operating and Storage Temperature Range T :T -55 to +200 C -0.9 -1.2 j stg ELECTRICAL CHARACTERISTICS (at T = 25C). -0.8 amb -1.0 PARAMETER SYMBOL ZTX550 ZTX551 UNIT CONDITIONS. -0.7 -0.8 MIN. MAX. MIN. MAX. Collector-Base V -60 -80 V I =-100A (BR)CBO C -0.6 -0.6 -0.01 -0.1 -0.01 -0.1 -1 -10 Breakdown Voltage -1 -10 Collector-Emitter V -45 -60 V I =-10mA* IC - Collector Current (Amps) IC - Collector Current (Amps) CEO(sus) C Sustaining Voltage VBE(on) v IC VBE(sat) v IC Emitter-Base V -5 -5 V I =-100A (BR)EBO E Breakdown Voltage Single Pulse Test at Tamb=25C 10 Collector Cut-Off I -0.1 A V =-45V CBO CB Current -0.1 A V =-60V CB Emitter Cut-Off I -0.1 -0.1 A V =-4V EBO EB Current 1 Collector-Emitter V -0.25 -0.35 V I =-150mA, CE(sat) C D.C. Saturation Voltage I =-15mA* B 1s 100ms 10ms 0.1 1.0ms Base-Emitter V -1.1 -1.1 V I =-150mA, 0.3ms BE(sat) C 0.1ms Saturation Voltage I =-15mA* B Static Forward h 100 300 50 150 I =-150mA, FE C Current Transfer 15 10 V =-10V* 0.01 CE 0.1 110 100 Ratio I =-1A, V =-10V* C CE VCE - Collector Voltage (Volts) Transition f 150 150 MHz I =-50mA, V =-10V T C CE Safe Operating Area Frequency f=100MHz 3-195 3-194 ZTX550 ZTX551IC - Collector Current (Amps) VBE - (Volts) VCE(sat) - (Volts) VBE(sat) - (Volts) hFE - Normalised Gain (%) PNP SILICON PLANAR ZTX550 ZTX550 MEDIUM POWER TRANSISTORS ZTX551 ZTX551 ISSUE 1 MARCH 94 FEATURES TYPICAL CHARACTERISTICS * 60 Volt V CEO * 1 Amp continuous current 100 -0.8 *P = 1 Watt tot 80 -0.6 C ZTX551 ZTX550 B 60 E -0.4 ZTX551 40 E-Line IC/IB=10 TO92 Compatible -0.2 20 ABSOLUTE MAXIMUM RATINGS. 0 PARAMETER SYMBOL ZTX550 ZTX551 UNIT -0.01 -0.1 -1 -10 -0.001 -0.01 -0.1 -1 -10 Collector-Base Voltage V -60 -80 V CBO IC - Collector Current (Amps) IC - Collector Current (Amps) Collector-Emitter Voltage V -45 -60 V CEO VCE(sat) v IC hFE v IC Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Power Dissipation: at T =25C P 1 W amb tot -1.0 -1.4 derate above 25C 5.7 mW/ C Operating and Storage Temperature Range T :T -55 to +200 C -0.9 -1.2 j stg ELECTRICAL CHARACTERISTICS (at T = 25C). -0.8 amb -1.0 PARAMETER SYMBOL ZTX550 ZTX551 UNIT CONDITIONS. -0.7 -0.8 MIN. MAX. MIN. MAX. Collector-Base V -60 -80 V I =-100A (BR)CBO C -0.6 -0.6 -0.01 -0.1 -0.01 -0.1 -1 -10 Breakdown Voltage -1 -10 Collector-Emitter V -45 -60 V I =-10mA* IC - Collector Current (Amps) IC - Collector Current (Amps) CEO(sus) C Sustaining Voltage VBE(on) v IC VBE(sat) v IC Emitter-Base V -5 -5 V I =-100A (BR)EBO E Breakdown Voltage Single Pulse Test at Tamb=25C 10 Collector Cut-Off I -0.1 A V =-45V CBO CB Current -0.1 A V =-60V CB Emitter Cut-Off I -0.1 -0.1 A V =-4V EBO EB Current 1 Collector-Emitter V -0.25 -0.35 V I =-150mA, CE(sat) C D.C. Saturation Voltage I =-15mA* B 1s 100ms 10ms 0.1 1.0ms Base-Emitter V -1.1 -1.1 V I =-150mA, 0.3ms BE(sat) C 0.1ms Saturation Voltage I =-15mA* B Static Forward h 100 300 50 150 I =-150mA, FE C Current Transfer 15 10 V =-10V* 0.01 CE 0.1 110 100 Ratio I =-1A, V =-10V* C CE VCE - Collector Voltage (Volts) Transition f 150 150 MHz I =-50mA, V =-10V T C CE Safe Operating Area Frequency f=100MHz 3-195 3-194 ZTX550 ZTX551