VBE - (Volts) hFE - Normalised Gain (%) VCE(sat) - (Volts) IC - Collector Current (Amps) VBE(sat) - (Volts) Switching time PNP SILICON PLANAR ZTX552 ZTX552 ZTX553 MEDIUM POWER TRANSISTORS ZTX553 ISSUE 1 MARCH 94 FEATURES TYPICAL CHARACTERISTICS * 100 Volt V tf ts CEO nS S * 1 Amp continuous current 3 600 IB1=IB2=IC/10 td tr -0.8 ns *P =1 Watt ns tot 100 200 ts -0.6 2 400 80 160 C tf B I /I =10 C B E 60 120 td -0.4 E-Line 40 80 1 200 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. -0.2 tr 20 40 100 PARAMETER SYMBOL ZTX552 ZTX553 UNIT 0 0 0 0 0 -0.001 -0.01 -0.1 -1 -0.01 -0.1 -1 Collector-Base Voltage V -100 -120 V CBO Collector-Emitter Voltage V -80 -100 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V -5 V EBO VCE(sat) v IC Switching Speeds Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Power Dissipation: at T =25C P 1 W 100 amb tot derate above 25C 5.7 mW/ C -1.0 IC/IB=10 80 Operating and Storage Temperature Range T T -55 to +200 C j: stg -0.8 V =-10V CE 60 ELECTRICAL CHARACTERISTICS (at T = 25C). amb -0.6 PARAMETER SYMBOL ZTX552 ZTX553 UNIT CONDITIONS. 40 MIN. MAX. MIN. MAX. -0.4 20 Collector-Base V -100 -120 V I =-100A (BR)CBO C Breakdown Voltage -0.2 -0.001 -0.01 -0.1 -1 -0.001 -0.01 -0.1 -1 -10 Collector-Emitter V -80 -100 V I =-10mA CEO(sus) C IC - Collector Current (Amps) IC - Collector Current (Amps) Sustaining Voltage Emitter-Base V -5 -5 V I =-100A hFE v IC VBE(sat) v IC (BR)EBO E Breakdown Voltage Single Pulse Test at Tamb=25C Collector Cut-Off I -0.1 V =-80V A CBO CB -10 Current -0.1 V =-100V CB -1.2 Emitter Cut-Off Current I -0.1 -0.1 A V =-4V EBO EB VCE=-10V Collector-Emitter V -0.25 -0.25 V I =-150mA, I =-15mA* CE(sat) C B -1 -1.0 Saturation Voltage Base-Emitter V -1.1 -1.1 V I =-150mA, I =-15mA* D.C. BE(sat) C B -0.8 1s Saturation Voltage 100ms 10ms -0.1 1.0ms Base-Emitter V -1.0 -1.0 V I =-150mA, V =-10V* BE(on) C CE -0.6 100s Turn-onn Voltage ZTX552 Static Forward Current h 40 150 40 200 I =-150mA, V =-10V* -0.4 FE C CE -0.0001 -0.001 -0.01 -0.1 -1 Transfer Ratio 10 10 I =-1A, V =-10V* C CE -0.01 -0.1 -1 -10 -100 Transition Frequency f 150 150 MHz I =-50mA, V =-10V T C CE IC - Collector Current (Amps) VCE - Collector Voltage (Volts) f=100MHz VBE(on) v IC Safe Operating Area Output Capacitance C 12 12 MHz V =-10V, f=1MHz obo CB *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-197 3-196 ZTX553 VBE - (Volts) hFE - Normalised Gain (%) VCE(sat) - (Volts) IC - Collector Current (Amps) VBE(sat) - (Volts) Switching time PNP SILICON PLANAR ZTX552 ZTX552 ZTX553 MEDIUM POWER TRANSISTORS ZTX553 ISSUE 1 MARCH 94 FEATURES TYPICAL CHARACTERISTICS * 100 Volt V tf ts CEO nS S * 1 Amp continuous current 3 600 IB1=IB2=IC/10 td tr -0.8 ns *P =1 Watt ns tot 100 200 ts -0.6 2 400 80 160 C tf B I /I =10 C B E 60 120 td -0.4 E-Line 40 80 1 200 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. -0.2 tr 20 40 100 PARAMETER SYMBOL ZTX552 ZTX553 UNIT 0 0 0 0 0 -0.001 -0.01 -0.1 -1 -0.01 -0.1 -1 Collector-Base Voltage V -100 -120 V CBO Collector-Emitter Voltage V -80 -100 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V -5 V EBO VCE(sat) v IC Switching Speeds Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Power Dissipation: at T =25C P 1 W 100 amb tot derate above 25C 5.7 mW/ C -1.0 IC/IB=10 80 Operating and Storage Temperature Range T T -55 to +200 C j: stg -0.8 V =-10V CE 60 ELECTRICAL CHARACTERISTICS (at T = 25C). amb -0.6 PARAMETER SYMBOL ZTX552 ZTX553 UNIT CONDITIONS. 40 MIN. MAX. MIN. MAX. -0.4 20 Collector-Base V -100 -120 V I =-100A (BR)CBO C Breakdown Voltage -0.2 -0.001 -0.01 -0.1 -1 -0.001 -0.01 -0.1 -1 -10 Collector-Emitter V -80 -100 V I =-10mA CEO(sus) C IC - Collector Current (Amps) IC - Collector Current (Amps) Sustaining Voltage Emitter-Base V -5 -5 V I =-100A hFE v IC VBE(sat) v IC (BR)EBO E Breakdown Voltage Single Pulse Test at Tamb=25C Collector Cut-Off I -0.1 V =-80V A CBO CB -10 Current -0.1 V =-100V CB -1.2 Emitter Cut-Off Current I -0.1 -0.1 A V =-4V EBO EB VCE=-10V Collector-Emitter V -0.25 -0.25 V I =-150mA, I =-15mA* CE(sat) C B -1 -1.0 Saturation Voltage Base-Emitter V -1.1 -1.1 V I =-150mA, I =-15mA* D.C. BE(sat) C B -0.8 1s Saturation Voltage 100ms 10ms -0.1 1.0ms Base-Emitter V -1.0 -1.0 V I =-150mA, V =-10V* BE(on) C CE -0.6 100s Turn-onn Voltage ZTX552 Static Forward Current h 40 150 40 200 I =-150mA, V =-10V* -0.4 FE C CE -0.0001 -0.001 -0.01 -0.1 -1 Transfer Ratio 10 10 I =-1A, V =-10V* C CE -0.01 -0.1 -1 -10 -100 Transition Frequency f 150 150 MHz I =-50mA, V =-10V T C CE IC - Collector Current (Amps) VCE - Collector Voltage (Volts) f=100MHz VBE(on) v IC Safe Operating Area Output Capacitance C 12 12 MHz V =-10V, f=1MHz obo CB *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-197 3-196 ZTX553