VBE - (Volts) hFE - Normalised Gain VCE(sat) - (Volts) hFE - Typical Gain IC - Collector Current (Amps) VBE(sat) - (Volts) VCE(sat) - (Volts) PNP SILICON PLANAR MEDIUM POWER ZTX558 ZTX558 HIGH VOLTAGE TRANSISTOR ISSUE 1 APRIL 94 FEATURES TYPICAL CHARACTERISTICS * 400 Volt V CEO * 200mA continuous current -55C *P = 1 Watt IC/IB=10 I /I =10 C B tot +25C 1.6 IC/IB=20 1.6 +100C IC/IB=50 +175C 1.4 1.4 C 1.2 1.2 B E 1.0 1.0 0.8 E-Line 0.8 0.6 TO92 Compatible 0.6 ABSOLUTE MAXIMUM RATINGS. 0.4 0.4 PARAMETER SYMBOL VALUE UNIT 0.2 0.2 Collector-Base Voltage V -400 V 0 CBO 0 0.001 0.01 0.1 110 20 0.001 0.01 0.1 110 20 Collector-Emitter Voltage V -400 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V -5 V EBO VCE(sat) v IC VCE(sat) v IC Continuous Collector Current I -200 mA C Power Dissipation P 1W tot Operating and Storage Temperature Range T :T -55 to +200 C j stg -55C +100C IC/IB=10 VCE=10V +25C 1.6 +25C 1.6 +100C ELECTRICAL CHARACTERISTICS (at T = 25C). -55C 300 +175C amb 1.4 1.4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 1.2 1.2 1.0 Collector-Base V -400 V 200 1.0 I =-100A (BR)CBO C Breakdown Voltage 0.8 0.8 0.6 0.6 Collector-Emitter V -400 V I =-10mA* BR(CEO) C 100 Breakdown Voltage 0.4 0.4 0.2 0.2 Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E 0 Voltage 0 0.001 0.01 0.1 10 20 1 0.001 0.01 0.1 110 20 Collector Cut-Off Current I -100 nA V =-320V CBO CB IC - Collector Current (Amps) IC - Collector Current (Amps) Collector Cut-Off Current I -100 nA V =-320V CES CE hFE v IC VBE(sat) v IC Emitter Cut-Off Current I -100 nA V =-4V EBO EB Single Pulse Test at Tamb=25C Collector-Emitter V -0.2 V I =-20mA, I =-2mA CE(sat) C B 1.0 Saturation Voltage -0.5 V I =-50mA, I =-6mA C B -55C VCE=10V +25C Base-Emitter V -0.9 V I =-50mA, I =-5mA 1.6 BE(sat) C B +100C +175C Saturation Voltage 1.4 0.1 1.2 Base-Emitter V -0.9 V IC=-50mA, V =-10V BE(on) CE Turn On Voltage 1.0 D.C. 0.8 1s Static Forward Current h 100 I =-1mA, V =-10V FE C CE 100ms Transfer Ratio 100 300 I =-50mA, V =-10V 10ms 0.6 C CE 0.01 1.0ms 15 I =-100mA, V =-10V* C CE 0.4 0.1ms Transition f 50 MHz I =-10mA, V =-20V 0.2 T C CE Frequency f=20MHz 0 0.001 0.01 0.1 110 20 0.001 Collector-Base C 5pF V =-20V, f=1MHz obo CB 110 100 1000 Breakdown Voltage IC - Collector Current (Amps) VCE - Collector Voltage (Volts) Switching times t 95 ns I =-50mA, V =-100V on C C VBE(on) v IC Safe Operating Area t 1600 ns I =5mA, I =-10mA off B1 B2 * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-203 3-202 VBE - (Volts) hFE - Normalised Gain VCE(sat) - (Volts) hFE - Typical Gain IC - Collector Current (Amps) VBE(sat) - (Volts) VCE(sat) - (Volts) PNP SILICON PLANAR MEDIUM POWER ZTX558 ZTX558 HIGH VOLTAGE TRANSISTOR ISSUE 1 APRIL 94 FEATURES TYPICAL CHARACTERISTICS * 400 Volt V CEO * 200mA continuous current -55C *P = 1 Watt IC/IB=10 I /I =10 C B tot +25C 1.6 IC/IB=20 1.6 +100C IC/IB=50 +175C 1.4 1.4 C 1.2 1.2 B E 1.0 1.0 0.8 E-Line 0.8 0.6 TO92 Compatible 0.6 ABSOLUTE MAXIMUM RATINGS. 0.4 0.4 PARAMETER SYMBOL VALUE UNIT 0.2 0.2 Collector-Base Voltage V -400 V 0 CBO 0 0.001 0.01 0.1 110 20 0.001 0.01 0.1 110 20 Collector-Emitter Voltage V -400 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V -5 V EBO VCE(sat) v IC VCE(sat) v IC Continuous Collector Current I -200 mA C Power Dissipation P 1W tot Operating and Storage Temperature Range T :T -55 to +200 C j stg -55C +100C IC/IB=10 VCE=10V +25C 1.6 +25C 1.6 +100C ELECTRICAL CHARACTERISTICS (at T = 25C). -55C 300 +175C amb 1.4 1.4 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 1.2 1.2 1.0 Collector-Base V -400 V 200 1.0 I =-100A (BR)CBO C Breakdown Voltage 0.8 0.8 0.6 0.6 Collector-Emitter V -400 V I =-10mA* BR(CEO) C 100 Breakdown Voltage 0.4 0.4 0.2 0.2 Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E 0 Voltage 0 0.001 0.01 0.1 10 20 1 0.001 0.01 0.1 110 20 Collector Cut-Off Current I -100 nA V =-320V CBO CB IC - Collector Current (Amps) IC - Collector Current (Amps) Collector Cut-Off Current I -100 nA V =-320V CES CE hFE v IC VBE(sat) v IC Emitter Cut-Off Current I -100 nA V =-4V EBO EB Single Pulse Test at Tamb=25C Collector-Emitter V -0.2 V I =-20mA, I =-2mA CE(sat) C B 1.0 Saturation Voltage -0.5 V I =-50mA, I =-6mA C B -55C VCE=10V +25C Base-Emitter V -0.9 V I =-50mA, I =-5mA 1.6 BE(sat) C B +100C +175C Saturation Voltage 1.4 0.1 1.2 Base-Emitter V -0.9 V IC=-50mA, V =-10V BE(on) CE Turn On Voltage 1.0 D.C. 0.8 1s Static Forward Current h 100 I =-1mA, V =-10V FE C CE 100ms Transfer Ratio 100 300 I =-50mA, V =-10V 10ms 0.6 C CE 0.01 1.0ms 15 I =-100mA, V =-10V* C CE 0.4 0.1ms Transition f 50 MHz I =-10mA, V =-20V 0.2 T C CE Frequency f=20MHz 0 0.001 0.01 0.1 110 20 0.001 Collector-Base C 5pF V =-20V, f=1MHz obo CB 110 100 1000 Breakdown Voltage IC - Collector Current (Amps) VCE - Collector Voltage (Volts) Switching times t 95 ns I =-50mA, V =-100V on C C VBE(on) v IC Safe Operating Area t 1600 ns I =5mA, I =-10mA off B1 B2 * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-203 3-202