ZTX560 E-LINE PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEATURES Excellent h characterisristics up to I =50mA FE C Low Saturation voltages PARTMARKING ZTX 560 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-base voltage V -500 V CBO Collector-emitter voltage V -500 V CEO Emitter-base voltage V -5 V EBO Peak pulse current I -500 mA CM Continuous collector current I -150 mA C Power dissipation P 1W tot Operating and storage temperature range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS Collector-base breakdown boltage V -500 V I =-100A (BR)CBO C Collector-emitter breakdown voltage V -500 V I =-10mA* BR(CEO) C Emitter-base breakdown voltage V -5 V I =-100A (BR)EBO E Collector cut-off current I I -100 nA V =-500V V =-500V CBO CES CB CE Emitter cut-off current I -100 nA V =-5V EBO EB Collector-emitter saturation voltage V -0.2 V I =-20mA, I =-2mA* CE(sat) C B -0.5 V I =-50mA, I =-10mA* C B Base-emitter saturation voltage V -0.9 V I =-50mA, I =-10mA* BE(sat) C B Base-emitter turn on voltage V -0.9 V I =-50mA, V =-10V* BE(on) CE C Static forward current transfer ratio h 100 300 I =-1mA, V =-10V FE C CE 80 300 I =-50mA, V =-10V* C CE 15 typ I =-100mA, V =-10V* C CE Transition frequency f 60 MHz V =-20V, I =-10mA, T CE C f=50MHz Output capacitance C 8pF V =-20V, f=1MHz obo CB Switching times t 110 typ. ns V =-100V, I =-50mA, on CE C t 1.5 typ. s I =-5mA, I =10mA off B1 B2 * Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% ISSUE 2 - SEPTEMBER 2006 SEMICONDUCTORS 1 PIN-OUT E-LINEZTX560 TYPICAL CHARACTERISTICS ISSUE 2 - SEPTEMBER 2006 SEMICONDUCTORS 2