- OBSOLETE NPN SILICON PLANAR MEDIUM POWER ZTX600 ZTX600 DARLINGTON TRANSISTORS ZTX601 ZTX601 ISSUE 2 JUNE 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). FEATURES amb PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS. * 160 Volt V CEO * 1 Amp continuous current MIN. TYP. MAX. MIN. TYP. MAX. * Gain of 5K at I =1 Amp C Static Forward h 1K 1K I =50mA, V =10V* FE C CE *P = 1 Watt Current Transfer 2K 100K 2K 100K I =0.5A, V =10V* tot C CE Ratio 1K 1K I =1A, V =10V* C C CE B E 1K 2K 1K 2K I =50mA, V =10V* C CE 2K 5K 20K 2K 5K 20K I =0.5A, V =10V* C CE Group A E-Line 1K 3K 1K 3K I =1A, V =10V* C CE TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 5K 10K 5K 10K I =50mA, V =10V* C CE Group B 10K 20K 100K 10K 20K 100K I =0.5A, V =10V* C CE PARAMETER SYMBOL ZTX600 ZTX601 UNIT 5K 10K 5K 10K I =1A, V =10V* C CE Collector-Base Voltage V 160 180 V CBO Transition f 150 250 150 250 MHz I =100mA, T C Collector-Emitter Voltage V 140 160 V Frequency V =10V f=20MHz CEO CE Emitter-Base Voltage V 10 V EBO Input Capacitance C 60 90 60 90 pF V =0.5V, f=1MHz ibo EB Peak Pulse Current I 4A CM Output C 10 15 10 15 pF V =10V, f=1MHz obo CE Capacitance Continuous Collector Current I 1A C Power Dissipation at T =25C P 1 W Switching Times t 0.75 0.75 s I =0.5A, V =10V amb tot on C CE derate above 25C 5.7 mW/ C I =I =0.5mA B1 B2 t 2.2 2.2 s off Operating and Storage Temperature Range T :T -55 to +200 C j stg *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb RS = 50K RS = 5K 1.0 PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. RS = 1M 0.8 RS = Collector-Base V 160 180 V I =100A (BR)CBO C Breakdown Voltage 0.6 Collector-Emitter V 140 160 V I =10mA* DC Conditions (BR)CEO C 0.4 Breakdown Voltage Emitter-Base V 10 10 V I =100A (BR)EBO E 0.2 Breakdown Voltage Collector Cut-Off I 0.01 A V =140V 0 CBO CB Current 0.01 A V =160V 1 10 100 200 CB 10 V =140V,T =100C A CB a VCE - Collector-Emitter Voltage (Volts) 10 V =160V,T =100C A CB a Emitter Cut-Off I 0.1 0.1 A V =8V Voltage Derating Graph EBO EB Current Colllector-Emitter I 10 A V =140V CES CES The maximum permissible operational temperature can be obtained from this graph using the Cut-Off Current 10 A V =160V CES following equation Collector-Emitter V 0.75 1.1 0.75 1.1 V I =0.5A, I =5mA* Power (max ) Power (act) CE(sat) C B T = +25C Saturation Voltage 0.85 1.2 0.85 1.2 V I =1A, I =10mA* amb ( max ) 0.0057 C B Base-Emitter V 1.7 1.9 1.7 1.9 V I =1A, I =10mA* T = Maximum operating ambient temperature BE(sat) C B amb(max ) Saturation Voltage Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V CE and source resistance (R ) Base-Emitter V 1.5 1.7 1.5 1.7 V IC=1A, V =5V* S BE(on) CE Turn-On Voltage Power(actual)= Actual power dissipation in users circuit 3-207 3-206 Maximum Power Dissipation (W)- OBSOLETE NPN SILICON PLANAR MEDIUM POWER ZTX600 ZTX600 DARLINGTON TRANSISTORS ZTX601 ZTX601 ISSUE 2 JUNE 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). FEATURES amb PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS. * 160 Volt V CEO * 1 Amp continuous current MIN. TYP. MAX. MIN. TYP. MAX. * Gain of 5K at I =1 Amp C Static Forward h 1K 1K I =50mA, V =10V* FE C CE *P = 1 Watt Current Transfer 2K 100K 2K 100K I =0.5A, V =10V* tot C CE Ratio 1K 1K I =1A, V =10V* C C CE B E 1K 2K 1K 2K I =50mA, V =10V* C CE 2K 5K 20K 2K 5K 20K I =0.5A, V =10V* C CE Group A E-Line 1K 3K 1K 3K I =1A, V =10V* C CE TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 5K 10K 5K 10K I =50mA, V =10V* C CE Group B 10K 20K 100K 10K 20K 100K I =0.5A, V =10V* C CE PARAMETER SYMBOL ZTX600 ZTX601 UNIT 5K 10K 5K 10K I =1A, V =10V* C CE Collector-Base Voltage V 160 180 V CBO Transition f 150 250 150 250 MHz I =100mA, T C Collector-Emitter Voltage V 140 160 V Frequency V =10V f=20MHz CEO CE Emitter-Base Voltage V 10 V EBO Input Capacitance C 60 90 60 90 pF V =0.5V, f=1MHz ibo EB Peak Pulse Current I 4A CM Output C 10 15 10 15 pF V =10V, f=1MHz obo CE Capacitance Continuous Collector Current I 1A C Power Dissipation at T =25C P 1 W Switching Times t 0.75 0.75 s I =0.5A, V =10V amb tot on C CE derate above 25C 5.7 mW/ C I =I =0.5mA B1 B2 t 2.2 2.2 s off Operating and Storage Temperature Range T :T -55 to +200 C j stg *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb RS = 50K RS = 5K 1.0 PARAMETER SYMBOL ZTX600 ZTX601 UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. RS = 1M 0.8 RS = Collector-Base V 160 180 V I =100A (BR)CBO C Breakdown Voltage 0.6 Collector-Emitter V 140 160 V I =10mA* DC Conditions (BR)CEO C 0.4 Breakdown Voltage Emitter-Base V 10 10 V I =100A (BR)EBO E 0.2 Breakdown Voltage Collector Cut-Off I 0.01 A V =140V 0 CBO CB Current 0.01 A V =160V 1 10 100 200 CB 10 V =140V,T =100C A CB a VCE - Collector-Emitter Voltage (Volts) 10 V =160V,T =100C A CB a Emitter Cut-Off I 0.1 0.1 A V =8V Voltage Derating Graph EBO EB Current Colllector-Emitter I 10 A V =140V CES CES The maximum permissible operational temperature can be obtained from this graph using the Cut-Off Current 10 A V =160V CES following equation Collector-Emitter V 0.75 1.1 0.75 1.1 V I =0.5A, I =5mA* Power (max ) Power (act) CE(sat) C B T = +25C Saturation Voltage 0.85 1.2 0.85 1.2 V I =1A, I =10mA* amb ( max ) 0.0057 C B Base-Emitter V 1.7 1.9 1.7 1.9 V I =1A, I =10mA* T = Maximum operating ambient temperature BE(sat) C B amb(max ) Saturation Voltage Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V CE and source resistance (R ) Base-Emitter V 1.5 1.7 1.5 1.7 V IC=1A, V =5V* S BE(on) CE Turn-On Voltage Power(actual)= Actual power dissipation in users circuit 3-207 3-206 Maximum Power Dissipation (W)