-
NPN SILICON PLANAR MEDIUM POWER
ZTX602
ZTX602
DARLINGTON TRANSISTORS
ZTX603
ZTX603
ISSUE 1 MARCH 94
ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
amb FEATURES
* 80 Volt V
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
CEO
* 1 Amp continuous current
MIN. MAX. MIN. MAX.
* Gain of 2K at I =1 Amp
C
*P = 1 Watt
Static Forward h 2K 2K I =50mA, V =5V
tot
FE C CE
Current Transfer 5K 5K I =500mA, V =5V* C
C CE
B
Ratio 2K 100K 2K 100K I =1A, V =5V*
E
C CE
0.5K 0.5K I =2A, V =5V* E-Line
C CE
TO92 Compatible
Transition Frequency f 150 150 MHz I =100mA, V =10V
T C CE
ABSOLUTE MAXIMUM RATINGS.
f=20MHz
PARAMETER SYMBOL ZTX602 ZTX603 UNIT
Input Capacitance C 90 Typical pF V =500mV, f=1MHz
ibo EB
Collector-Base Voltage V 80 100 V
CBO
Output Capacitance C 15 Typical pF V =10V, f=1MHz
Collector-Emitter Voltage V 60 80 V
obo CB
CEO
Emitter-Base Voltage V 10 V
EBO
Switching Times t 0.5 Typical I =500mA, V =10V
s
on C CE
I =I =0.5mA Peak Pulse Current I 4A
B1 B2 CM
t 1.1 Typical
s
off
Continuous Collector Current I 1A
C
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Power Dissipation at T = 25C P 1 W
amb tot
derate above 25C 5.7 mW/ C
Operating and Storage Temperature Range T :T -55 to +200 C
j stg
RS = 50K RS = 10K
RS = 200K
ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
1.0
amb
RS = 1M
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
RS =
0.8
MIN. MAX. MIN. MAX.
0.6
Collector-Base V 80 100 V I =100A
(BR)CBO C
Breakdown Voltage
DC Conditions
0.4
Collector-Emitter V 60 80 V I =10mA*
(BR)CEO C
ZTX602 ZTX603 Breakdown Voltage
0.2
Emitter-Base V 10 10 V I =100A
(BR)EBO E
Breakdown Voltage
0
1 10 100 200
Collector Cut-Off I 0.01 A V =60V
CBO CB
Current 0.01 V =80V
A
VCE - Collector-Emitter Voltage (Volts) CB
10 V =60V,T =100C
A
CB amb
10 V =80V,T =100C
A
CB amb
Voltage Derating Graph
Emitter Cut-Off I 0.1 0.1 A V =8V
EBO EB
Current
The maximum permissible operational temperature can be obtained from this graph using
the following equation
Colllector-Emitter I 10 A V =60V
CES CES
Cut-Off Current 10 V =80V
A
CES
Power (max ) Power (act)
T = +25C
amb (max )
0.0057
Collector-Emitter V 1.0 1.0 V I =400mA,
CE(sat) C
Saturation Voltage 1.0 1.0 V I =0.4mA*
B
T = Maximum operating ambient temperature
amb(max)
I =1A, I =1mA*
C B
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V and source resistance (R ) Base-Emitter V 1.8 1.8 V I =1A, I =1mA*
BE(sat) C B
CE S
Saturation Voltage
Power(actual)= Actual power dissipation in users circuit
Base-Emitter V 1.7 1.7 V IC=1A, V =5V*
BE(on) CE
Turn-On Voltage
3-210 3-209
Maximum Power Dissipation (W)-
NPN SILICON PLANAR MEDIUM POWER
ZTX602
ZTX602
DARLINGTON TRANSISTORS
ZTX603
ZTX603
ISSUE 1 MARCH 94
ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
amb FEATURES
* 80 Volt V
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
CEO
* 1 Amp continuous current
MIN. MAX. MIN. MAX.
* Gain of 2K at I =1 Amp
C
*P = 1 Watt
Static Forward h 2K 2K I =50mA, V =5V
tot
FE C CE
Current Transfer 5K 5K I =500mA, V =5V* C
C CE
B
Ratio 2K 100K 2K 100K I =1A, V =5V*
E
C CE
0.5K 0.5K I =2A, V =5V* E-Line
C CE
TO92 Compatible
Transition Frequency f 150 150 MHz I =100mA, V =10V
T C CE
ABSOLUTE MAXIMUM RATINGS.
f=20MHz
PARAMETER SYMBOL ZTX602 ZTX603 UNIT
Input Capacitance C 90 Typical pF V =500mV, f=1MHz
ibo EB
Collector-Base Voltage V 80 100 V
CBO
Output Capacitance C 15 Typical pF V =10V, f=1MHz
Collector-Emitter Voltage V 60 80 V
obo CB
CEO
Emitter-Base Voltage V 10 V
EBO
Switching Times t 0.5 Typical I =500mA, V =10V
s
on C CE
I =I =0.5mA Peak Pulse Current I 4A
B1 B2 CM
t 1.1 Typical
s
off
Continuous Collector Current I 1A
C
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Power Dissipation at T = 25C P 1 W
amb tot
derate above 25C 5.7 mW/ C
Operating and Storage Temperature Range T :T -55 to +200 C
j stg
RS = 50K RS = 10K
RS = 200K
ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
1.0
amb
RS = 1M
PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS.
RS =
0.8
MIN. MAX. MIN. MAX.
0.6
Collector-Base V 80 100 V I =100A
(BR)CBO C
Breakdown Voltage
DC Conditions
0.4
Collector-Emitter V 60 80 V I =10mA*
(BR)CEO C
ZTX602 ZTX603 Breakdown Voltage
0.2
Emitter-Base V 10 10 V I =100A
(BR)EBO E
Breakdown Voltage
0
1 10 100 200
Collector Cut-Off I 0.01 A V =60V
CBO CB
Current 0.01 V =80V
A
VCE - Collector-Emitter Voltage (Volts) CB
10 V =60V,T =100C
A
CB amb
10 V =80V,T =100C
A
CB amb
Voltage Derating Graph
Emitter Cut-Off I 0.1 0.1 A V =8V
EBO EB
Current
The maximum permissible operational temperature can be obtained from this graph using
the following equation
Colllector-Emitter I 10 A V =60V
CES CES
Cut-Off Current 10 V =80V
A
CES
Power (max ) Power (act)
T = +25C
amb (max )
0.0057
Collector-Emitter V 1.0 1.0 V I =400mA,
CE(sat) C
Saturation Voltage 1.0 1.0 V I =0.4mA*
B
T = Maximum operating ambient temperature
amb(max)
I =1A, I =1mA*
C B
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V and source resistance (R ) Base-Emitter V 1.8 1.8 V I =1A, I =1mA*
BE(sat) C B
CE S
Saturation Voltage
Power(actual)= Actual power dissipation in users circuit
Base-Emitter V 1.7 1.7 V IC=1A, V =5V*
BE(on) CE
Turn-On Voltage
3-210 3-209
Maximum Power Dissipation (W)