- NPN SILICON PLANAR MEDIUM POWER ZTX602 ZTX602 DARLINGTON TRANSISTORS ZTX603 ZTX603 ISSUE 1 MARCH 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb FEATURES * 80 Volt V PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS. CEO * 1 Amp continuous current MIN. MAX. MIN. MAX. * Gain of 2K at I =1 Amp C *P = 1 Watt Static Forward h 2K 2K I =50mA, V =5V tot FE C CE Current Transfer 5K 5K I =500mA, V =5V* C C CE B Ratio 2K 100K 2K 100K I =1A, V =5V* E C CE 0.5K 0.5K I =2A, V =5V* E-Line C CE TO92 Compatible Transition Frequency f 150 150 MHz I =100mA, V =10V T C CE ABSOLUTE MAXIMUM RATINGS. f=20MHz PARAMETER SYMBOL ZTX602 ZTX603 UNIT Input Capacitance C 90 Typical pF V =500mV, f=1MHz ibo EB Collector-Base Voltage V 80 100 V CBO Output Capacitance C 15 Typical pF V =10V, f=1MHz Collector-Emitter Voltage V 60 80 V obo CB CEO Emitter-Base Voltage V 10 V EBO Switching Times t 0.5 Typical I =500mA, V =10V s on C CE I =I =0.5mA Peak Pulse Current I 4A B1 B2 CM t 1.1 Typical s off Continuous Collector Current I 1A C *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Power Dissipation at T = 25C P 1 W amb tot derate above 25C 5.7 mW/ C Operating and Storage Temperature Range T :T -55 to +200 C j stg RS = 50K RS = 10K RS = 200K ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). 1.0 amb RS = 1M PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS. RS = 0.8 MIN. MAX. MIN. MAX. 0.6 Collector-Base V 80 100 V I =100A (BR)CBO C Breakdown Voltage DC Conditions 0.4 Collector-Emitter V 60 80 V I =10mA* (BR)CEO C ZTX602 ZTX603 Breakdown Voltage 0.2 Emitter-Base V 10 10 V I =100A (BR)EBO E Breakdown Voltage 0 1 10 100 200 Collector Cut-Off I 0.01 A V =60V CBO CB Current 0.01 V =80V A VCE - Collector-Emitter Voltage (Volts) CB 10 V =60V,T =100C A CB amb 10 V =80V,T =100C A CB amb Voltage Derating Graph Emitter Cut-Off I 0.1 0.1 A V =8V EBO EB Current The maximum permissible operational temperature can be obtained from this graph using the following equation Colllector-Emitter I 10 A V =60V CES CES Cut-Off Current 10 V =80V A CES Power (max ) Power (act) T = +25C amb (max ) 0.0057 Collector-Emitter V 1.0 1.0 V I =400mA, CE(sat) C Saturation Voltage 1.0 1.0 V I =0.4mA* B T = Maximum operating ambient temperature amb(max) I =1A, I =1mA* C B Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V and source resistance (R ) Base-Emitter V 1.8 1.8 V I =1A, I =1mA* BE(sat) C B CE S Saturation Voltage Power(actual)= Actual power dissipation in users circuit Base-Emitter V 1.7 1.7 V IC=1A, V =5V* BE(on) CE Turn-On Voltage 3-210 3-209 Maximum Power Dissipation (W)- NPN SILICON PLANAR MEDIUM POWER ZTX602 ZTX602 DARLINGTON TRANSISTORS ZTX603 ZTX603 ISSUE 1 MARCH 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb FEATURES * 80 Volt V PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS. CEO * 1 Amp continuous current MIN. MAX. MIN. MAX. * Gain of 2K at I =1 Amp C *P = 1 Watt Static Forward h 2K 2K I =50mA, V =5V tot FE C CE Current Transfer 5K 5K I =500mA, V =5V* C C CE B Ratio 2K 100K 2K 100K I =1A, V =5V* E C CE 0.5K 0.5K I =2A, V =5V* E-Line C CE TO92 Compatible Transition Frequency f 150 150 MHz I =100mA, V =10V T C CE ABSOLUTE MAXIMUM RATINGS. f=20MHz PARAMETER SYMBOL ZTX602 ZTX603 UNIT Input Capacitance C 90 Typical pF V =500mV, f=1MHz ibo EB Collector-Base Voltage V 80 100 V CBO Output Capacitance C 15 Typical pF V =10V, f=1MHz Collector-Emitter Voltage V 60 80 V obo CB CEO Emitter-Base Voltage V 10 V EBO Switching Times t 0.5 Typical I =500mA, V =10V s on C CE I =I =0.5mA Peak Pulse Current I 4A B1 B2 CM t 1.1 Typical s off Continuous Collector Current I 1A C *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Power Dissipation at T = 25C P 1 W amb tot derate above 25C 5.7 mW/ C Operating and Storage Temperature Range T :T -55 to +200 C j stg RS = 50K RS = 10K RS = 200K ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). 1.0 amb RS = 1M PARAMETER SYMBOL ZTX602 ZTX603 UNIT CONDITIONS. RS = 0.8 MIN. MAX. MIN. MAX. 0.6 Collector-Base V 80 100 V I =100A (BR)CBO C Breakdown Voltage DC Conditions 0.4 Collector-Emitter V 60 80 V I =10mA* (BR)CEO C ZTX602 ZTX603 Breakdown Voltage 0.2 Emitter-Base V 10 10 V I =100A (BR)EBO E Breakdown Voltage 0 1 10 100 200 Collector Cut-Off I 0.01 A V =60V CBO CB Current 0.01 V =80V A VCE - Collector-Emitter Voltage (Volts) CB 10 V =60V,T =100C A CB amb 10 V =80V,T =100C A CB amb Voltage Derating Graph Emitter Cut-Off I 0.1 0.1 A V =8V EBO EB Current The maximum permissible operational temperature can be obtained from this graph using the following equation Colllector-Emitter I 10 A V =60V CES CES Cut-Off Current 10 V =80V A CES Power (max ) Power (act) T = +25C amb (max ) 0.0057 Collector-Emitter V 1.0 1.0 V I =400mA, CE(sat) C Saturation Voltage 1.0 1.0 V I =0.4mA* B T = Maximum operating ambient temperature amb(max) I =1A, I =1mA* C B Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V and source resistance (R ) Base-Emitter V 1.8 1.8 V I =1A, I =1mA* BE(sat) C B CE S Saturation Voltage Power(actual)= Actual power dissipation in users circuit Base-Emitter V 1.7 1.7 V IC=1A, V =5V* BE(on) CE Turn-On Voltage 3-210 3-209 Maximum Power Dissipation (W)