- NPN SILICON PLANAR MEDIUM POWER ZTX604 ZTX604 DARLINGTON TRANSISTORS ZTX605 ZTX605 ISSUE 1 MARCH 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). FEATURES amb * 120 Volt V CEO PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS. * 1 Amp continuous current * Gain of 2K at I =1 Amp MIN. MAX. MIN. MAX. C *P = 1 Watt tot Static Forward h 2K 2K I =50mA, V =5V FE C CE C Current Transfer Ratio 5K 5K I =500mA, V =5V* B C CE E 2K 100K 2K 100K I =1A, V =5V* C CE 0.5K 0.5K I =2A, V =5V* C CE E-Line TO92 Compatible Transition Frequency f 150 150 MHz I =100mA, V =10V T C CE ABSOLUTE MAXIMUM RATINGS. f=20MHz PARAMETER SYMBOL ZTX604 ZTX605 UNIT Input Capacitance C 90 Typical pF V =500mV, f=1MHz ibo EB Collector-Base Voltage V 120 140 V CBO Output Capacitance C 15 Typical pF V =10V, f=1MHz Collector-Emitter Voltage V 100 120 V obo CB CEO Emitter-Base Voltage V 10 V EBO Switching Times t 0.5 Typical s I =500mA, V =10V on C CE I =I =0.5mA Peak Pulse Current I 4A B1 B2 CM t 1.6 Typical s off Continuous Collector Current I 1A C *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/ C Operating and Storage Temperature Range T :T -55 to +200 C j stg 1.0 RS = 100K RS = 20K RS = 1M ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb RS = 0.8 PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS. 0.6 MIN. MAX. MIN. MAX. DC Conditions Collector-Base V 120 140 V I =100A (BR)CBO C 0.4 Breakdown Voltage ZTX604 0.2 Collector-Emitter V 100 120 V I =10mA* (BR)CEO C ZTX605 Breakdown Voltage 0 Emitter-Base V 10 10 V I =100A (BR)EBO E 1 10 100 200 Breakdown Voltage VCE - Collector-Emitter Voltage (Volts) Collector Cut-Off I 0.01 A V =100V CBO CB Current 0.01 A V =120V CB Voltage Derating Graph 10 V =100V,T =100C A CB amb 10 V =120V,T =100C A CB amb Emitter Cut-Off I 0.1 0.1 A V =8V EBO EB The maximum permissible operational temperature can be obtained from this graph using the Current following equation Colllector-Emitter I 10 A V =100V Power(max ) Power(act) CES CES T = +25C Cut-Off Current 10 V =120V amb (max ) CES 0.0057 Collector-Emitter V 1.0 1.0 V I =250mA, I =0.25mA* T = Maximum operating ambient temperature CE(sat) C B amb(max ) Saturation Voltage 1.5 1.5 V I =1A, I =1mA* C B Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V CE and source resistance (R ) Base-Emitter V 1.8 1.8 V I =1A, I =1mA* S BE(sat) C B Saturation Voltage Power(actual)= Actual power dissipation in users circuit Base-Emitter V 1.7 1.7 V IC=1A, V =5V* BE(on) CE Turn-On Voltage 3-213 3-212 Maximum Power Dissipation (W)- NPN SILICON PLANAR MEDIUM POWER ZTX604 ZTX604 DARLINGTON TRANSISTORS ZTX605 ZTX605 ISSUE 1 MARCH 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). FEATURES amb * 120 Volt V CEO PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS. * 1 Amp continuous current * Gain of 2K at I =1 Amp MIN. MAX. MIN. MAX. C *P = 1 Watt tot Static Forward h 2K 2K I =50mA, V =5V FE C CE C Current Transfer Ratio 5K 5K I =500mA, V =5V* B C CE E 2K 100K 2K 100K I =1A, V =5V* C CE 0.5K 0.5K I =2A, V =5V* C CE E-Line TO92 Compatible Transition Frequency f 150 150 MHz I =100mA, V =10V T C CE ABSOLUTE MAXIMUM RATINGS. f=20MHz PARAMETER SYMBOL ZTX604 ZTX605 UNIT Input Capacitance C 90 Typical pF V =500mV, f=1MHz ibo EB Collector-Base Voltage V 120 140 V CBO Output Capacitance C 15 Typical pF V =10V, f=1MHz Collector-Emitter Voltage V 100 120 V obo CB CEO Emitter-Base Voltage V 10 V EBO Switching Times t 0.5 Typical s I =500mA, V =10V on C CE I =I =0.5mA Peak Pulse Current I 4A B1 B2 CM t 1.6 Typical s off Continuous Collector Current I 1A C *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/ C Operating and Storage Temperature Range T :T -55 to +200 C j stg 1.0 RS = 100K RS = 20K RS = 1M ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb RS = 0.8 PARAMETER SYMBOL ZTX604 ZTX605 UNIT CONDITIONS. 0.6 MIN. MAX. MIN. MAX. DC Conditions Collector-Base V 120 140 V I =100A (BR)CBO C 0.4 Breakdown Voltage ZTX604 0.2 Collector-Emitter V 100 120 V I =10mA* (BR)CEO C ZTX605 Breakdown Voltage 0 Emitter-Base V 10 10 V I =100A (BR)EBO E 1 10 100 200 Breakdown Voltage VCE - Collector-Emitter Voltage (Volts) Collector Cut-Off I 0.01 A V =100V CBO CB Current 0.01 A V =120V CB Voltage Derating Graph 10 V =100V,T =100C A CB amb 10 V =120V,T =100C A CB amb Emitter Cut-Off I 0.1 0.1 A V =8V EBO EB The maximum permissible operational temperature can be obtained from this graph using the Current following equation Colllector-Emitter I 10 A V =100V Power(max ) Power(act) CES CES T = +25C Cut-Off Current 10 V =120V amb (max ) CES 0.0057 Collector-Emitter V 1.0 1.0 V I =250mA, I =0.25mA* T = Maximum operating ambient temperature CE(sat) C B amb(max ) Saturation Voltage 1.5 1.5 V I =1A, I =1mA* C B Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V CE and source resistance (R ) Base-Emitter V 1.8 1.8 V I =1A, I =1mA* S BE(sat) C B Saturation Voltage Power(actual)= Actual power dissipation in users circuit Base-Emitter V 1.7 1.7 V IC=1A, V =5V* BE(on) CE Turn-On Voltage 3-213 3-212 Maximum Power Dissipation (W)