ZTX614 Diodes Incorporated

NPN SILICON PLANAR MEDIUM POWER ZTX614 DARLINGTON TRANSISTOR ISSUE 1 APRIL 94 FEATURES * 100 Volt V CEO * 800 mA continuous current * Gain of 10K at I =500mA C *P =1 Watt tot C B E REFER TO BCX38 FOR GRAPHS E-line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 120 V CBO Collector-Emitter Voltage V 100 V CEO Emitter-Base Voltage V 10 V EBO Continuous Collector Current I 800 mA C Power Dissipation at T =25C P 1.0 W amb tot derate above 25C 5.7 mW/ C Operating and Storage Temperature Range T :T -55 to +200 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 120 V I =10A, I =0 (BR)CBO C E Breakdown Voltage Collector-Emitter V 100 V I =10mA, I =0* CEO(sus) C B Sustaining Voltage Emitter-Base V 10 V I =10A, I =0 (BR)EBO E C Breakdown Voltage Collector Cut-Off I 100 nA V =60V, I =0 CBO CB E Current Emitter Cut-Off Current I 100 nA V =8V, I =0 EBO EB C Collector-Emitter V 1.25 V I =800mA, I =8mA* CE(sat) C B Saturation Voltage Base-Emitter V 1.8 V IC=800mA, V =5V* BE(on) CE Turn-On Voltage Static Forward Current h 5000 I =100mA, V =5V* FE C CE Transfer Ratio 10000 I =500mA, V =5V* C CE *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% 3-215X-ON Electronics Largest Supplier of Electrical and Electronic Components Click to view similar products for Darlington Transistors category: Click to view products by Diodes Incorporated manufacturer: Other Similar products are found below : NJVMJD128T4G 281287X BDV64B NJVMJD117T4G LB1205-L-E 2N6053 2N6383 ULN2003ACM/TR 2N7371 2N6058 2N6059 2N6051 2SB852KT146B 2SD2560 TIP112TU BCV27 MMSTA28T146 NJVNJD35N04T4G MJD127T4 FJB102TM BSP61H6327XTSA1 BU941ZPFI 2SD1980TL NTE2350 NTE245 NTE46 NTE98 ULN2003ADR2G NTE2344 NTE2349 NTE2405 NTE244 NTE247 NTE248 NTE249 NTE253 NTE2548 NTE261 NTE262 NTE263 NTE264 NTE269 NTE2317 NTE271 NTE2341 NTE2342 MMBT6427LT1G MMBTA13LT1G BCV29.115 BCV49.115