Max Power Dissipation - (Watts) Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX618 ZTX618 HIGH GAIN TRANSISTOR ISSUE 2 JULY 1995 FEATURES * 10A Peak pulse current THERMAL CHARACTERISTICS * Excellent h characteristics up to10A (pulsed) FE PARAMETER SYMBOL MAX. UNIT * Extremely low saturation voltage e.g. 7mV typ. *I cont 3.5A Thermal Resistance: C Junction to Ambient R 175 C/W 1 th(j-amb)1 C Junction to Ambient R 116 C/W 2 th( j-amb)2 APPLICATIONS B E * Power MOSFET gate driver in conjunction with Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. E-Line complementary ZTX718 TO92 Compatible 1.0 ABSOLUTE MAXIMUM RATINGS. 180 D=1(D.C.) 160 PARAMETER SYMBOL VALUE UNIT t1 140 0.75 D=t1 Collector-Base Voltage V 20 V 120 CBO tP tP 100 D=0.5 Collector-Emitter Voltage V 20 V 0.50 CEO 80 D=0.2 60 Emitter-Base Voltage V 5V EBO D=0.1 D=0.05 0.25 40 Peak Pulse Current I 10 A Single Pulse CM 20 0 Continuous Collector Current I 3.5 A C 0.1ms 1ms 10ms 100ms 1s 10s 100s -40 040 80 120 160 200 Pulse Width T -Temperature ( C) Base Current I 500 mA B Transient Thermal Resistance Derating curve Practical Power Dissipation* P 1.5 W totp Power Dissipation P 1W tot Operating and Storage Temperature Range T :T -55 to +200 C j stg * Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstrae 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in D-81673 Mnchen Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kong Zetex plc 1997 Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Internet: Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 ZTX618 ZTX618 TYPICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 0.4 0.4 IC/IB=50 25C Collector-Base V 20 100 V I =100A (BR)CBO C 0.3 0.3 Breakdown Voltage 100C IC/IB=100 25C Collector-Emitter V 20 27 V I =10mA* 0.2 IC/IB=50 0.2 (BR)CEO C -55C IC/IB=10 Breakdown Voltage 0.1 0.1 Emitter-Base V 58.3 V I =100A (BR)EBO E Breakdown Voltage 0 0 1mA 10mA 100mA 1A 10A 1mA 10mA 100mA 1A 10A Collector Cut-Off I 100 nA V =16V CBO CB Current IC-Collector Current IC-Collector Current VCE(sat) v IC VCE(sat) v IC Emitter Cut-Off I 100 nA V =4V EBO EB Current 1.2 VCE=2V IC/IB=50 Collector Emitter I 100 nA V =16V 100C CES CES Cut-Off Current 1.0 450 -55C 25C 0.8 Collector-Emitter V 7 15 mV I =0.1A, I =10mA* CE(sat) C B 25C Saturation Voltage 80 150 mV I =1A, I =10mA* C B 0.6 100C 210 255 mV I =3.5A, I =50mA* C B 225 -55C 0.4 Base-Emitter V 0.93 1.05 V I =3.5A, I =50mA* BE(sat) C B 0.2 Saturation Voltage 0 0 10mA 100mA 1A 10A 10mA 100mA 1A 10A Base-Emitter V 0.86 1.0 V I =3.5A, V =2V* 1mA 1mA BE(on) C CE Turn-On Voltage I -Collector Current IC-Collector Current C Static Forward h 200 400 I =10mA, V =2V* hFE v IC VBE(sat) v Ic FE C CE Current Transfer 300 450 I =200mA, V =2V* C CE Single Pulse Test Tamb=25C Ratio 170 300 I =3A, V =2V* C CE 10 VCE=2V 40 85 I =10A, V =2V* C CE 1.0 -55C Transition f 100 140 MHz I =50mA, V =10V 0.8 T C CE 1 Frequency f=100MHz 25C 0.6 DC 100C 1s Output Capacitance C 23 30 pF V =10V, f=1MHz obo CB 100ms 0.4 0.1 10ms 1ms Turn-On Time t 170 ns V =10V, I =1A (on) CC C 100s 0.2 I =-I =10mA B1 B2 Turn-Off Time t 400 ns (off) 0 0.01 1mA 10mA 100mA 1A 10A 0.1V 1V 10V 100V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% IC-Collector Current VCE - Collector Voltage VBE(on) v IC Safe Operating Area