Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR ZTX649 ZTX649 MEDIUM POWER TRANSISTOR ISSUE 2 APRIL 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). FEATURES amb * 25 Volt V PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. CEO * 2 Amp continuous current Output Capacitance C 25 50 pF V =10V f=1MHz obo CB * Low saturation voltage *P =1 Watt tot Switching Times t 55 ns I =500mA, V =10V on C CC I =I =50mA APPLICATIONS C B1 B2 B t 300 ns E off * Motor driver E-Line * DC-DC converters *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 35 V CBO Collector-Emitter Voltage V 25 V CEO THERMAL CHARACTERISTICS Emitter-Base Voltage V 5V EBO PARAMETER SYMBOL MAX. UNIT Peak Pulse Current I 6A CM Thermal Resistance:Junction to Ambient R 175 C/W Continuous Collector Current I 2A 1 th(j-amb)1 C Junction to Ambient R 116 C/W 2 th(j-amb)2 Power Dissipation at T =25C P 1 W amb tot Junction to Case R 70 C/W th(j-case) derate above 25C 5.7 mW/ C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Operating and Storage Temperature Range T :T -55 to +200 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 35 V I =100A (BR)CBO C Breakdown Voltage Collector-Emitter V 25 V I =10mA* (BR)CEO C Breakdown Voltage Emitter-Base V5V I =100A (BR)EBO E 2.5 200 Breakdown Voltage D=1 (D.C.) 2.0 t1 D=t1/tP Collector Cut-Off I 0.1 A V =30V CBO CB Current 10 A V =30V,T =100C CB amb tP 1.5 Emitter Cut-Off Current I 0.1 A V =4V EBO EB 100 D=0.5 Collector-Emitter V 0.12 0.3 V I =1A, I =100mA* 1.0 CE(sat) C B Saturation Voltage 0.23 0.5 V I =2A, I =200mA* C B D=0.2 0.5 D=0.1 Base-Emitter V 0.9 1.25 V I =1A, I =100mA* BE(sat) C B Single Pulse Saturation Voltage 0 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Base-Emitter V 0.8 1 V IC=1A, V =2V* BE(on) CE T -Temperature (C) Pulse Width (seconds) Turn-On Voltage Static Forward Current h 70 200 I =50mA, V =2V* FE C CE Derating curve Maximum transient thermal impedance Transfer Ratio 100 200 300 I =1A, V =2V* C CE 75 150 I =2A, V =2V* C CE 15 50 I =6A, V =2V* C CE Transition Frequency f 150 240 MHz I =100mA, V =5V T C CE f=100MHz 3-217 3-216 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR ZTX649 ZTX649 MEDIUM POWER TRANSISTOR ISSUE 2 APRIL 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). FEATURES amb * 25 Volt V PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. CEO * 2 Amp continuous current Output Capacitance C 25 50 pF V =10V f=1MHz obo CB * Low saturation voltage *P =1 Watt tot Switching Times t 55 ns I =500mA, V =10V on C CC I =I =50mA APPLICATIONS C B1 B2 B t 300 ns E off * Motor driver E-Line * DC-DC converters *Measured under pulsed conditions. Pulse Width=300s. Duty cycle 2% TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 35 V CBO Collector-Emitter Voltage V 25 V CEO THERMAL CHARACTERISTICS Emitter-Base Voltage V 5V EBO PARAMETER SYMBOL MAX. UNIT Peak Pulse Current I 6A CM Thermal Resistance:Junction to Ambient R 175 C/W Continuous Collector Current I 2A 1 th(j-amb)1 C Junction to Ambient R 116 C/W 2 th(j-amb)2 Power Dissipation at T =25C P 1 W amb tot Junction to Case R 70 C/W th(j-case) derate above 25C 5.7 mW/ C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Operating and Storage Temperature Range T :T -55 to +200 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 35 V I =100A (BR)CBO C Breakdown Voltage Collector-Emitter V 25 V I =10mA* (BR)CEO C Breakdown Voltage Emitter-Base V5V I =100A (BR)EBO E 2.5 200 Breakdown Voltage D=1 (D.C.) 2.0 t1 D=t1/tP Collector Cut-Off I 0.1 A V =30V CBO CB Current 10 A V =30V,T =100C CB amb tP 1.5 Emitter Cut-Off Current I 0.1 A V =4V EBO EB 100 D=0.5 Collector-Emitter V 0.12 0.3 V I =1A, I =100mA* 1.0 CE(sat) C B Saturation Voltage 0.23 0.5 V I =2A, I =200mA* C B D=0.2 0.5 D=0.1 Base-Emitter V 0.9 1.25 V I =1A, I =100mA* BE(sat) C B Single Pulse Saturation Voltage 0 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Base-Emitter V 0.8 1 V IC=1A, V =2V* BE(on) CE T -Temperature (C) Pulse Width (seconds) Turn-On Voltage Static Forward Current h 70 200 I =50mA, V =2V* FE C CE Derating curve Maximum transient thermal impedance Transfer Ratio 100 200 300 I =1A, V =2V* C CE 75 150 I =2A, V =2V* C CE 15 50 I =6A, V =2V* C CE Transition Frequency f 150 240 MHz I =100mA, V =5V T C CE f=100MHz 3-217 3-216 Thermal Resistance (C/W)