Max Power Dissipation - (Watts) Case temperature Ambient temperature ZTX652 Not Recommended for New Design Please Use ZTX653 NPN SILICON PLANAR ZTX652 ZTX652 MEDIUM POWER TRANSISTORS ZTX653 ZTX653 ISSUE 2 JULY 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb * 100 Volt V CEO ZTX652 ZTX653 * 2 Amp continuous current PARAMETER SYMBOL UNIT CONDITIONS. * Low saturation voltage MIN. TYP. MAX. MIN. TYP. MAX. *P =1 Watt tot C B Transition f 140 175 140 175 MHz I =100mA, V =5V E T C CE Frequency f=100MHz E-Line Switching Times t 80 80 ns I =500mA, V =10V TO92 Compatible on C CC I =I =50mA B1 B2 ABSOLUTE MAXIMUM RATINGS. t 1200 1200 ns off PARAMETER SYMBOL ZTX652 ZTX653 UNIT Output Capacitance C 30 30 pF V =10V f=1MHz obo CB Collector-Base Voltage V 100 120 V CBO Collector-Emitter Voltage V 80 100 V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current I 6A CM Continuous Collector Current I 2A C THERMAL CHARACTERISTICS Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C PARAMETER SYMBOL MAX. UNIT Operating and Storage Temperature Range T :T -55 to +200 C j stg Thermal Resistance: Junction to Ambient R 175 C/W 1 th(j-amb)1 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R ZTX652 ZTX653 70 C/W th(j-case) PARAMETER SYMBOL UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Collector-Base V 100 120 V I =100A (BR)CBO C Breakdown Voltage 2.5 200 D=1 (D.C.) Collector-Emitter V 80 100 V I =10mA* (BR)CEO C 2.0 t1 D=t1/tP Breakdown Voltage tP 1.5 Emitter-Base V55V I =100A (BR)EBO E 100 D=0.5 Breakdown Voltage 1.0 D=0.2 Collector Cut-Off I 0.1 A V =80V CBO CB 0.5 Current 0.1 A V =100V D=0.1 CB Single Pulse 10 V =80V,T =100C A CB amb 0 0 10 V =100V,T =100C A CB amb -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Emitter Cut-Off I 0.1 0.1 A V =4V T -Temperature (C) Pulse Width (seconds) EBO EB Current Derating curve Maximum transient thermal impedance Collector-Emitter V 0.13 0.3 0.13 0.3 V I =1A, I =100mA* CE(sat) C B Saturation Voltage 0.23 0.5 0.23 0.5 V I =2A, I =200mA* C B Base-Emitter V 0.9 1.25 0.9 1.25 V I =1A, I =100mA* BE(sat) C B Saturation Voltage Base-Emitter V 0.8 1 0.8 1 V IC=1A, V =2V* BE(on) CE Turn-On Voltage 3-223 3-222 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature ZTX652 Not Recommended for New Design Please Use ZTX653 NPN SILICON PLANAR ZTX652 ZTX652 MEDIUM POWER TRANSISTORS ZTX653 ZTX653 ISSUE 2 JULY 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb * 100 Volt V CEO ZTX652 ZTX653 * 2 Amp continuous current PARAMETER SYMBOL UNIT CONDITIONS. * Low saturation voltage MIN. TYP. MAX. MIN. TYP. MAX. *P =1 Watt tot C B Transition f 140 175 140 175 MHz I =100mA, V =5V E T C CE Frequency f=100MHz E-Line Switching Times t 80 80 ns I =500mA, V =10V TO92 Compatible on C CC I =I =50mA B1 B2 ABSOLUTE MAXIMUM RATINGS. t 1200 1200 ns off PARAMETER SYMBOL ZTX652 ZTX653 UNIT Output Capacitance C 30 30 pF V =10V f=1MHz obo CB Collector-Base Voltage V 100 120 V CBO Collector-Emitter Voltage V 80 100 V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current I 6A CM Continuous Collector Current I 2A C THERMAL CHARACTERISTICS Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C PARAMETER SYMBOL MAX. UNIT Operating and Storage Temperature Range T :T -55 to +200 C j stg Thermal Resistance: Junction to Ambient R 175 C/W 1 th(j-amb)1 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R ZTX652 ZTX653 70 C/W th(j-case) PARAMETER SYMBOL UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Collector-Base V 100 120 V I =100A (BR)CBO C Breakdown Voltage 2.5 200 D=1 (D.C.) Collector-Emitter V 80 100 V I =10mA* (BR)CEO C 2.0 t1 D=t1/tP Breakdown Voltage tP 1.5 Emitter-Base V55V I =100A (BR)EBO E 100 D=0.5 Breakdown Voltage 1.0 D=0.2 Collector Cut-Off I 0.1 A V =80V CBO CB 0.5 Current 0.1 A V =100V D=0.1 CB Single Pulse 10 V =80V,T =100C A CB amb 0 0 10 V =100V,T =100C A CB amb -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Emitter Cut-Off I 0.1 0.1 A V =4V T -Temperature (C) Pulse Width (seconds) EBO EB Current Derating curve Maximum transient thermal impedance Collector-Emitter V 0.13 0.3 0.13 0.3 V I =1A, I =100mA* CE(sat) C B Saturation Voltage 0.23 0.5 0.23 0.5 V I =2A, I =200mA* C B Base-Emitter V 0.9 1.25 0.9 1.25 V I =1A, I =100mA* BE(sat) C B Saturation Voltage Base-Emitter V 0.8 1 0.8 1 V IC=1A, V =2V* BE(on) CE Turn-On Voltage 3-223 3-222 Thermal Resistance (C/W)