) IC - Collector Current (Amps VBE(sat) - (Volts) VCE(sat) - (Volts) Switching time VBE - (Volts) hFE - Normalised Gain (%) ZTX654 NPN SILICON PLANAR ZTX654 ZTX654 MEDIUM POWER TRANSISTORS ZTX655 ZTX655 ISSUE 2 JULY 94 FEATURES TYPICAL CHARACTERISTICS * 150 Volt V CEO * 1 Amp continuous current 0.18 100 * Low saturation voltage *P = 1 Watt tot 80 VCE=5V C B E IC/IB=10 0.10 60 E-Line 40 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 20 PARAMETER SYMBOL ZTX654 ZTX655 UNIT 0 Collector-Base Voltage V 125 150 V 0 CBO 0.01 0.1 1 10 0.01 0.1 1 10 Collector-Emitter Voltage V 125 150 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V 5V EBO hFE v IC Peak Pulse Current I 2A VCE(sat) v IC CM Continuous Collector Current I 1A C Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature T :T -55 to +200 C j stg 1.2 1.2 Range IC/IB=10 VCE=5V 1.0 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). 1.0 amb ZTX654 ZTX655 0.8 0.8 PARAMETER SYMBOL UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base V 125 150 V I =100A, I =0 0.6 (BR)CBO 0.6 C E Breakdown Voltage Collector-Emitter V 125 150 V I =10mA, I =0* 0.4 0.4 (BR)CEO C B 0.01 0.1 1 10 0.01 0.1 1 10 Breakdown Voltage C Collector Current (Amps) Emitter-Base V 55V I =100A, I =0 I - (BR)EBO E C IC - Collector Current (Amps) Breakdown Voltage VBE(sat) v IC BE(on) C V v I Collector Cut-Off I 100 nA V =100V, I =0 CBO CB E Current 100 nA V =125V, I =0 CB E Single Pulse Test at T =25C amb 10 Emitter Cut-Off I 100 100 nA V =3V, I =0 td ts EBO EB C IB1=IB2=IC/10 tr s Current tf VCE=10V ts s 3.0 Collector-Emitter V 0.5 0.5 V I =500mA, I =50mA* 0.7 CE(sat) C B Saturation Voltage 0.5 0.5 V I =1A, I =200mA* 1.0 C B 0.6 td 2.0 0.5 Base-Emitter V 1.1 1.1 V I =500mA, I =50mA* BE(sat) C B D.C. Saturation Voltage 1s 0.4 100ms 10ms 0.3 Base-Emitter V 1.0 1.0 V I =500mA, V =5V* BE(on) C CE 1.0ms 1.0 0.1 tf 300s Turn-On Voltage 0.2 0.1 tr Static Forward h 50 50 I =10mA, V =5V FE C CE 0 Current Transfer 50 50 I =500mA, V =5V* ZTX655 0.01 0.1 C CE 1 0.01 Ratio 20 20 I =1A, V =5V* C CE 1110100 000 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Transition f 30 30 MHz I =10mA, V =20V T C CE Frequency f=20MHz Safe Operating Area Switching Speeds Output Capacitance C 20 20 pF V =20V, f=1MHz obo CB 3-226 3-225) IC - Collector Current (Amps VBE(sat) - (Volts) VCE(sat) - (Volts) Switching time VBE - (Volts) hFE - Normalised Gain (%) ZTX654 NPN SILICON PLANAR ZTX654 ZTX654 MEDIUM POWER TRANSISTORS ZTX655 ZTX655 ISSUE 2 JULY 94 FEATURES TYPICAL CHARACTERISTICS * 150 Volt V CEO * 1 Amp continuous current 0.18 100 * Low saturation voltage *P = 1 Watt tot 80 VCE=5V C B E IC/IB=10 0.10 60 E-Line 40 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 20 PARAMETER SYMBOL ZTX654 ZTX655 UNIT 0 Collector-Base Voltage V 125 150 V 0 CBO 0.01 0.1 1 10 0.01 0.1 1 10 Collector-Emitter Voltage V 125 150 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V 5V EBO hFE v IC Peak Pulse Current I 2A VCE(sat) v IC CM Continuous Collector Current I 1A C Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature T :T -55 to +200 C j stg 1.2 1.2 Range IC/IB=10 VCE=5V 1.0 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). 1.0 amb ZTX654 ZTX655 0.8 0.8 PARAMETER SYMBOL UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base V 125 150 V I =100A, I =0 0.6 (BR)CBO 0.6 C E Breakdown Voltage Collector-Emitter V 125 150 V I =10mA, I =0* 0.4 0.4 (BR)CEO C B 0.01 0.1 1 10 0.01 0.1 1 10 Breakdown Voltage C Collector Current (Amps) Emitter-Base V 55V I =100A, I =0 I - (BR)EBO E C IC - Collector Current (Amps) Breakdown Voltage VBE(sat) v IC BE(on) C V v I Collector Cut-Off I 100 nA V =100V, I =0 CBO CB E Current 100 nA V =125V, I =0 CB E Single Pulse Test at T =25C amb 10 Emitter Cut-Off I 100 100 nA V =3V, I =0 td ts EBO EB C IB1=IB2=IC/10 tr s Current tf VCE=10V ts s 3.0 Collector-Emitter V 0.5 0.5 V I =500mA, I =50mA* 0.7 CE(sat) C B Saturation Voltage 0.5 0.5 V I =1A, I =200mA* 1.0 C B 0.6 td 2.0 0.5 Base-Emitter V 1.1 1.1 V I =500mA, I =50mA* BE(sat) C B D.C. Saturation Voltage 1s 0.4 100ms 10ms 0.3 Base-Emitter V 1.0 1.0 V I =500mA, V =5V* BE(on) C CE 1.0ms 1.0 0.1 tf 300s Turn-On Voltage 0.2 0.1 tr Static Forward h 50 50 I =10mA, V =5V FE C CE 0 Current Transfer 50 50 I =500mA, V =5V* ZTX655 0.01 0.1 C CE 1 0.01 Ratio 20 20 I =1A, V =5V* C CE 1110100 000 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Transition f 30 30 MHz I =10mA, V =20V T C CE Frequency f=20MHz Safe Operating Area Switching Speeds Output Capacitance C 20 20 pF V =20V, f=1MHz obo CB 3-226 3-225