IC - Collector Current (Amps) VBE(sat) - (Volts) VCE(sat) - (Volts) Switching time VBE - (Volts) hFE - Normalised Gain (%) NPN SILICON PLANAR MEDIUM POWER ZTX656 ZTX656 HIGH VOLTAGE TRANSISTORS ZTX657 ZTX657 ISSUE 2 JULY 94 FEATURES TYPICAL CHARACTERISTICS * 300 Volt V CEO * 0.5 Amp continuous current 1.8 100 *P =1 Watt 1.6 tot 1.4 80 VCE=5V C 1.2 B E IC/IB=10 1.0 60 0.8 E-Line 40 0.6 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.4 20 PARAMETER SYMBOL ZTX656 ZTX657 UNIT 0.2 0 Collector-Base Voltage V 200 300 V 0 CBO 0.01 0.1 1 10 0.01 0.1 1 10 Collector-Emitter Voltage V 200 300 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V 5V EBO FE C h v I Peak Pulse Current I 1A CE(sat) C V v I CM Continuous Collector Current I 0.5 A C Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature T :T -55 to +200 C j stg 1.2 1.2 Range IC/IB=10 VCE=5V 1.0 1.0 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb ZTX656 ZTX657 0.8 0.8 PARAMETER SYMBOL UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base V 200 300 V I =100A, I =0 0.6 0.6 (BR)CBO C E Breakdown Voltage 0.4 0.4 Collector-Emitter V 200 300 V I =10mA, I =0* (BR)CEO C B 0.01 0.1 1 10 0.01 0.1 1 10 Breakdown Voltage IC - Collector Current (Amps) Emitter-Base V 55V I =100A, I =0 IC - Collector Current (Amps) (BR)EBO E C Breakdown Voltage VBE(sat) v IC VBE(on) v IC Collector Cut-Off I 100 nA V =160V, I =0 CBO CB E Single Pulse Test at Tamb=25C Current 100 nA V =200V, I =0 CB E 1 td Emitter Cut-Off I 100 100 nA V =3V, I =0 IB1=IB2=IC/10 EBO EB C tr tf VCE=10V Current s ts 1.4 s ts Collector-Emitter V 0.5 0.5 V I =100mA, I =10mA* CE(sat) C B 0.1 1.2 3 Saturation Voltage 1.0 Base-Emitter V 11VI =100mA, I =10mA* D.C. BE(sat) C B 2 0.8 1s Saturation Voltage 100ms tf 10ms 0.6 0.01 1.0ms Base-Emitter V 1 1 V IC=100mA, V =5V* BE(on) CE 0.4 1 300s Turn-On Voltage td 0.2 tr Static Forward h 50 50 I =100mA, V =5V 0 0 FE C CE 0.01 0.1 1 Current Transfer 40 40 I =10mA, V =5V 0.001 C CE Ratio 1 10 100 1000 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Transition f 30 30 MHz I =10mA, V =20V T C CE Frequency f=20MHz Safe Operating Area Switching Speeds 3-228 3-227 ZTX656 ZTX657IC - Collector Current (Amps) VBE(sat) - (Volts) VCE(sat) - (Volts) Switching time VBE - (Volts) hFE - Normalised Gain (%) NPN SILICON PLANAR MEDIUM POWER ZTX656 ZTX656 HIGH VOLTAGE TRANSISTORS ZTX657 ZTX657 ISSUE 2 JULY 94 FEATURES TYPICAL CHARACTERISTICS * 300 Volt V CEO * 0.5 Amp continuous current 1.8 100 *P =1 Watt 1.6 tot 1.4 80 VCE=5V C 1.2 B E IC/IB=10 1.0 60 0.8 E-Line 40 0.6 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.4 20 PARAMETER SYMBOL ZTX656 ZTX657 UNIT 0.2 0 Collector-Base Voltage V 200 300 V 0 CBO 0.01 0.1 1 10 0.01 0.1 1 10 Collector-Emitter Voltage V 200 300 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V 5V EBO FE C h v I Peak Pulse Current I 1A CE(sat) C V v I CM Continuous Collector Current I 0.5 A C Power Dissipation at T =25C P 1W amb tot Operating and Storage Temperature T :T -55 to +200 C j stg 1.2 1.2 Range IC/IB=10 VCE=5V 1.0 1.0 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb ZTX656 ZTX657 0.8 0.8 PARAMETER SYMBOL UNIT CONDITIONS. MIN. MAX. MIN. MAX. Collector-Base V 200 300 V I =100A, I =0 0.6 0.6 (BR)CBO C E Breakdown Voltage 0.4 0.4 Collector-Emitter V 200 300 V I =10mA, I =0* (BR)CEO C B 0.01 0.1 1 10 0.01 0.1 1 10 Breakdown Voltage IC - Collector Current (Amps) Emitter-Base V 55V I =100A, I =0 IC - Collector Current (Amps) (BR)EBO E C Breakdown Voltage VBE(sat) v IC VBE(on) v IC Collector Cut-Off I 100 nA V =160V, I =0 CBO CB E Single Pulse Test at Tamb=25C Current 100 nA V =200V, I =0 CB E 1 td Emitter Cut-Off I 100 100 nA V =3V, I =0 IB1=IB2=IC/10 EBO EB C tr tf VCE=10V Current s ts 1.4 s ts Collector-Emitter V 0.5 0.5 V I =100mA, I =10mA* CE(sat) C B 0.1 1.2 3 Saturation Voltage 1.0 Base-Emitter V 11VI =100mA, I =10mA* D.C. BE(sat) C B 2 0.8 1s Saturation Voltage 100ms tf 10ms 0.6 0.01 1.0ms Base-Emitter V 1 1 V IC=100mA, V =5V* BE(on) CE 0.4 1 300s Turn-On Voltage td 0.2 tr Static Forward h 50 50 I =100mA, V =5V 0 0 FE C CE 0.01 0.1 1 Current Transfer 40 40 I =10mA, V =5V 0.001 C CE Ratio 1 10 100 1000 VCE - Collector Voltage (Volts) IC - Collector Current (Amps) Transition f 30 30 MHz I =10mA, V =20V T C CE Frequency f=20MHz Safe Operating Area Switching Speeds 3-228 3-227 ZTX656 ZTX657