Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX658 ZTX658 HIGH VOLTAGE TRANSISTOR ISSUE 2 APRIL 2002 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). * 400 Volt V amb CEO * 0.5 Amp continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. *P =1 Watt tot Transition Frequency f 50 MHz I =20mA, V =20V T C CE f=20MHz APPLICATIONS C B Output capcitance C 10 pF V =20V, f=1MHz * Telephone dialler circuits obo CB E E-Line Switching times t 130 ns I =100mA, V =100V on C C TO92 Compatible t 3300 ns I =10mA, I =-20mA off B1 B2 ABSOLUTE MAXIMUM RATINGS. * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 400 V CBO Collector-Emitter Voltage V 400 V CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current I 1A CM THERMAL CHARACTERISTICS Continuous Collector Current I 500 mA C PARAMETER SYMBOL MAX. UNIT Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/ C Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Junction to Ambient R 116 C/W 2 th(j -a mb)2 Operating and Storage Temperature Range T :T -55 to +200 C j stg Junction to Case R 70 C/W th(j-case) ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 400 V I =100A (BR)CBO C Breakdown Voltage Collector-Emitter V 400 V I =10mA* (BR)CEO) C Breakdown Voltage 2.5 200 Emitter-Base V5V I =100A (BR)EBO E Breakdown Voltage D=1 (D.C.) 2.0 t1 D=t1/tP Collector Cut-Off I 100 nA V =320V CBO CB Current tP 1.5 Collector Cut-Off I 100 nA V =320V 100 D=0.5 CBO CE Current 1.0 Emitter Cut-Off Current I 100 nA V =4V D=0.2 EBO EB 0.5 D=0.1 Collector-Emitter V 0.3 V I =20mA, I =1mA CE(sat) C B Single Pulse Saturation Voltage 0.25 V I =50mA, I =5mA* 0 0 C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 0.5 V I =100mA, I =10mA* C B T -Temperature (C) Pulse Width (seconds) Base-Emitter V 0.9 V I =100mA, I =10mA* BE(sat) C B Saturation Voltage Derating curve Maximum transient thermal impedance Base-Emitter V 0.9 V IC=100mA, V =5V* BE(on) CE Turn On Voltage Static Forward Current h 50 I =1mA, V =5V* FE C CE Transfer Ratio 50 I =100mA, V =5V* C CE 40 I =200mA, V =10V* C CE 3-230 3-229 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX658 ZTX658 HIGH VOLTAGE TRANSISTOR ISSUE 2 APRIL 2002 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). * 400 Volt V amb CEO * 0.5 Amp continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. *P =1 Watt tot Transition Frequency f 50 MHz I =20mA, V =20V T C CE f=20MHz APPLICATIONS C B Output capcitance C 10 pF V =20V, f=1MHz * Telephone dialler circuits obo CB E E-Line Switching times t 130 ns I =100mA, V =100V on C C TO92 Compatible t 3300 ns I =10mA, I =-20mA off B1 B2 ABSOLUTE MAXIMUM RATINGS. * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 400 V CBO Collector-Emitter Voltage V 400 V CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current I 1A CM THERMAL CHARACTERISTICS Continuous Collector Current I 500 mA C PARAMETER SYMBOL MAX. UNIT Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/ C Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Junction to Ambient R 116 C/W 2 th(j -a mb)2 Operating and Storage Temperature Range T :T -55 to +200 C j stg Junction to Case R 70 C/W th(j-case) ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 400 V I =100A (BR)CBO C Breakdown Voltage Collector-Emitter V 400 V I =10mA* (BR)CEO) C Breakdown Voltage 2.5 200 Emitter-Base V5V I =100A (BR)EBO E Breakdown Voltage D=1 (D.C.) 2.0 t1 D=t1/tP Collector Cut-Off I 100 nA V =320V CBO CB Current tP 1.5 Collector Cut-Off I 100 nA V =320V 100 D=0.5 CBO CE Current 1.0 Emitter Cut-Off Current I 100 nA V =4V D=0.2 EBO EB 0.5 D=0.1 Collector-Emitter V 0.3 V I =20mA, I =1mA CE(sat) C B Single Pulse Saturation Voltage 0.25 V I =50mA, I =5mA* 0 0 C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 0.5 V I =100mA, I =10mA* C B T -Temperature (C) Pulse Width (seconds) Base-Emitter V 0.9 V I =100mA, I =10mA* BE(sat) C B Saturation Voltage Derating curve Maximum transient thermal impedance Base-Emitter V 0.9 V IC=100mA, V =5V* BE(on) CE Turn On Voltage Static Forward Current h 50 I =1mA, V =5V* FE C CE Transfer Ratio 50 I =100mA, V =5V* C CE 40 I =200mA, V =10V* C CE 3-230 3-229 Thermal Resistance (C/W)