Max Power Dissipation - (Watts)
Case temperature
Ambient temperature
NPN SILICON PLANAR MEDIUM POWER
ZTX688B
ZTX688B
HIGH GAIN TRANSISTOR
ISSUE 2 MAY 94
FEATURES
ELECTRICAL CHARACTERISTICS (at T = 25C)
amb
* 12 Volt V
CEO
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
* Gain of 400 at I =3 Amps
C
* Very low saturation voltage
Transition Frequency f 150 MHz I =50mA, V =5V
T C CE
f=50MHz
APPLICATIONS
* Darlington replacement
C
Input Capacitance C 200 pF V =0.5V, f=1MHz
ibo EB
B
E
* Flash gun convertors
Output Capacitance C 40 pF V =10V, f=1MHz
obo CB
* Battery powered circuits
E-Line
* Motor drivers
Switching Times t 40 ns I =500mA, I =50mA
on C B1 TO92 Compatible
t 500 ns I =50mA, V =10V
off B2 CC
ABSOLUTE MAXIMUM RATINGS.
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V 12 V
CBO
Collector-Emitter Voltage V 12 V
CEO
THERMAL CHARACTERISTICS
Emitter-Base Voltage V 5V
EBO
Peak Pulse Current I 10 A
PARAMETER SYMBOL MAX. UNIT CM
Continuous Collector Current I 3A
C
Thermal Resistance:Junction to Ambient R 175 C/W
1 th(j-amb)1
Practical Power Dissipation* P 1.5 W
totp
Junction to Ambient R 116 C/W
2
th(j-amb)2
Junction to Case
R 70 C/W
Power Dissipation at T =25C P 1 W
th(j-case)
amb tot
derate above 25C 5.7 mW/C
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Operating and Storage Temperature Range T :T -55 to +200 C
j stg
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T = 25C)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V 12 V I =100A
(BR)CBO C
2.5
200
Voltage
D=1 (D.C.)
Collector-Emitter Breakdown V 12 V I =10mA*
(BR)CEO C
2.0 t1
D=t1/tP
Voltage
tP
Emitter-Base Breakdown V5V I =100A
1.5
(BR)EBO E
Voltage
100 D=0.5
1.0
Collector Cut-Off Current I 0.1 V =10V
A
CBO CB
D=0.2
Emitter Cut-Off Current I 0.1 A V =4V
EBO EB
0.5
D=0.1
Single Pulse
Collector-Emitter Saturation V 0.04 V I =0.1A, I =1mA
CE(sat) C B
0
0
Voltage 0.06 V I =0.1A, I =0.5mA*
C B
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
0.18 V I =1A, I =50mA*
C B
T -Temperature (C) Pulse Width (seconds)
0.35 V I =3A, I =20mA*
C B
Base-Emitter V 1.1 V I =3A, I =20mA*
BE(sat) C B
Derating curve Maximum transient thermal impedance
Saturation Voltage
Base-Emitter V 1 V IC=3A, V =2V*
BE(on) CE
Turn-On Voltage
Static Forward Current h 500 I =0.1A, V =2V*
FE C CE
Transfer Ratio 400 I =3A, V =2V*
C CE
100 I =10A, V =2V*
C CE
3-233 3-232
Thermal Resistance (C/W)Max Power Dissipation - (Watts)
Case temperature
Ambient temperature
NPN SILICON PLANAR MEDIUM POWER
ZTX688B
ZTX688B
HIGH GAIN TRANSISTOR
ISSUE 2 MAY 94
FEATURES
ELECTRICAL CHARACTERISTICS (at T = 25C)
amb
* 12 Volt V
CEO
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
* Gain of 400 at I =3 Amps
C
* Very low saturation voltage
Transition Frequency f 150 MHz I =50mA, V =5V
T C CE
f=50MHz
APPLICATIONS
* Darlington replacement
C
Input Capacitance C 200 pF V =0.5V, f=1MHz
ibo EB
B
E
* Flash gun convertors
Output Capacitance C 40 pF V =10V, f=1MHz
obo CB
* Battery powered circuits
E-Line
* Motor drivers
Switching Times t 40 ns I =500mA, I =50mA
on C B1 TO92 Compatible
t 500 ns I =50mA, V =10V
off B2 CC
ABSOLUTE MAXIMUM RATINGS.
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V 12 V
CBO
Collector-Emitter Voltage V 12 V
CEO
THERMAL CHARACTERISTICS
Emitter-Base Voltage V 5V
EBO
Peak Pulse Current I 10 A
PARAMETER SYMBOL MAX. UNIT CM
Continuous Collector Current I 3A
C
Thermal Resistance:Junction to Ambient R 175 C/W
1 th(j-amb)1
Practical Power Dissipation* P 1.5 W
totp
Junction to Ambient R 116 C/W
2
th(j-amb)2
Junction to Case
R 70 C/W
Power Dissipation at T =25C P 1 W
th(j-case)
amb tot
derate above 25C 5.7 mW/C
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Operating and Storage Temperature Range T :T -55 to +200 C
j stg
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T = 25C)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V 12 V I =100A
(BR)CBO C
2.5
200
Voltage
D=1 (D.C.)
Collector-Emitter Breakdown V 12 V I =10mA*
(BR)CEO C
2.0 t1
D=t1/tP
Voltage
tP
Emitter-Base Breakdown V5V I =100A
1.5
(BR)EBO E
Voltage
100 D=0.5
1.0
Collector Cut-Off Current I 0.1 V =10V
A
CBO CB
D=0.2
Emitter Cut-Off Current I 0.1 A V =4V
EBO EB
0.5
D=0.1
Single Pulse
Collector-Emitter Saturation V 0.04 V I =0.1A, I =1mA
CE(sat) C B
0
0
Voltage 0.06 V I =0.1A, I =0.5mA*
C B
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
0.18 V I =1A, I =50mA*
C B
T -Temperature (C) Pulse Width (seconds)
0.35 V I =3A, I =20mA*
C B
Base-Emitter V 1.1 V I =3A, I =20mA*
BE(sat) C B
Derating curve Maximum transient thermal impedance
Saturation Voltage
Base-Emitter V 1 V IC=3A, V =2V*
BE(on) CE
Turn-On Voltage
Static Forward Current h 500 I =0.1A, V =2V*
FE C CE
Transfer Ratio 400 I =3A, V =2V*
C CE
100 I =10A, V =2V*
C CE
3-233 3-232
Thermal Resistance (C/W)