Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX689B ZTX689B HIGH GAIN TRANSISTOR ISSUE 1 MAY 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 20 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 400 at I =2 Amps C * Very low saturation voltage Transition Frequency f 150 MHz I =50mA, V =5V T C CE f=50MHz APPLICATIONS * Darlington replacement C Input Capacitance C 200 pF V =0.5V, f=1MHz ibo EB B E * Flash gun convertors Output Capacitance C 16 pF V =10V, f=1MHz obo CB * Battery powered circuits E-Line * Motor drivers Switching Times t 30 ns I =500mA, I =50mA on C B TO92 Compatible t 800 ns I =50mA, V =10V off B2 CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 20 V CBO Collector-Emitter Voltage V 20 V THERMAL CHARACTERISTICS CEO Emitter-Base Voltage V 5V EBO PARAMETER SYMBOL MAX. UNIT Peak Pulse Current I 8A CM Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Continuous Collector Current I 3A C Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R Practical Power Dissipation* P 1.5 W 70 C/W totp th(j-case) Power Dissipation at T =25C P 1 W amb tot Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 2.5 200 Collector-Base Breakdown V 20 V I =100A (BR)CBO C D=1 (D.C.) Voltage 2.0 t1 D=t1/tP Collector-Emitter Breakdown V 20 V I =10mA* (BR)CEO C Voltage tP 1.5 100 D=0.5 Emitter-Base Breakdown V5V I =100A (BR)EBO E 1.0 Voltage D=0.2 Collector Cut-Off Current I 0.1 V =16V A CBO CB 0.5 D=0.1 Single Pulse Emitter Cut-Off Current I 0.1 A V =4V EBO EB 0 0 Collector-Emitter Saturation V 0.1 V I =0.1A, I =0.5mA* -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 CE(sat) C B Voltage 0.5 V I =2A, I =10mA* T -Temperature (C) Pulse Width (seconds) C B Base-Emitter V 0.9 V I =1A, I =10mA* BE(sat) C B Derating curve Maximum transient thermal impedance Saturation Voltage Base-Emitter V 0.9 V IC=1A, V =2V* BE(on) CE Turn-On Voltage Static Forward Current h 500 I =0.1A, V =2V* FE C CE Transfer Ratio 400 I =2A, V =2V* C CE 150 I =6A, V =2V* C CE 3-236 3-235 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX689B ZTX689B HIGH GAIN TRANSISTOR ISSUE 1 MAY 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 20 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 400 at I =2 Amps C * Very low saturation voltage Transition Frequency f 150 MHz I =50mA, V =5V T C CE f=50MHz APPLICATIONS * Darlington replacement C Input Capacitance C 200 pF V =0.5V, f=1MHz ibo EB B E * Flash gun convertors Output Capacitance C 16 pF V =10V, f=1MHz obo CB * Battery powered circuits E-Line * Motor drivers Switching Times t 30 ns I =500mA, I =50mA on C B TO92 Compatible t 800 ns I =50mA, V =10V off B2 CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 20 V CBO Collector-Emitter Voltage V 20 V THERMAL CHARACTERISTICS CEO Emitter-Base Voltage V 5V EBO PARAMETER SYMBOL MAX. UNIT Peak Pulse Current I 8A CM Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Continuous Collector Current I 3A C Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R Practical Power Dissipation* P 1.5 W 70 C/W totp th(j-case) Power Dissipation at T =25C P 1 W amb tot Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 2.5 200 Collector-Base Breakdown V 20 V I =100A (BR)CBO C D=1 (D.C.) Voltage 2.0 t1 D=t1/tP Collector-Emitter Breakdown V 20 V I =10mA* (BR)CEO C Voltage tP 1.5 100 D=0.5 Emitter-Base Breakdown V5V I =100A (BR)EBO E 1.0 Voltage D=0.2 Collector Cut-Off Current I 0.1 V =16V A CBO CB 0.5 D=0.1 Single Pulse Emitter Cut-Off Current I 0.1 A V =4V EBO EB 0 0 Collector-Emitter Saturation V 0.1 V I =0.1A, I =0.5mA* -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 CE(sat) C B Voltage 0.5 V I =2A, I =10mA* T -Temperature (C) Pulse Width (seconds) C B Base-Emitter V 0.9 V I =1A, I =10mA* BE(sat) C B Derating curve Maximum transient thermal impedance Saturation Voltage Base-Emitter V 0.9 V IC=1A, V =2V* BE(on) CE Turn-On Voltage Static Forward Current h 500 I =0.1A, V =2V* FE C CE Transfer Ratio 400 I =2A, V =2V* C CE 150 I =6A, V =2V* C CE 3-236 3-235 Thermal Resistance (C/W)