Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX690B ZTX690B HIGH GAIN TRANSISTOR ISSUE 1 MAY 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 45 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 400 at I =1 Amp C Transition Frequency f 150 MHz I =50mA, V =5V T C CE * Very low saturation voltage f=50MHz APPLICATIONS Input Capacitance C 200 pF V =0.5V, f=1MHz ibo EB * Darlington replacement C B Output Capacitance C 16 pF V =10V, f=1MHz E obo CB * Siren Drivers Switching Times t 33 ns I =500mA, I =50mA * Battery powered circuits on C B E-Line t 1300 ns I =50mA, V =10V off B2 CC * Motor drivers TO92 Compatible *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT THERMAL CHARACTERISTICS Collector-Base Voltage V 45 V CBO Collector-Emitter Voltage V 45 V CEO PARAMETER SYMBOL MAX. UNIT Emitter-Base Voltage V 5V EBO Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Peak Pulse Current I 6A CM Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R 70 C/W Continuous Collector Current I 2A th(j-case) C Practical Power Dissipation* P 1.5 W totp Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 2.5 200 Collector-Base Breakdown V 45 V I =100A (BR)CBO C D=1 (D.C.) Voltage 2.0 t1 D=t1/tP Collector-Emitter Breakdown V 45 V I =10mA* (BR)CEO C tP Voltage 1.5 100 D=0.5 Emitter-Base Breakdown V5V I =100A (BR)EBO E 1.0 Voltage D=0.2 Collector Cut-Off Current I 0.1 A V =35V CBO CB 0.5 D=0.1 Single Pulse Emitter Cut-Off Current I 0.1 A V =4V EBO EB 0 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector-Emitter Saturation V 0.1 V I =0.1A, I =0.5mA* CE(sat) C B T -Temperature (C) Pulse Width (seconds) Voltage 0.5 V I =1A, I =5mA* C B Base-Emitter V 0.9 V I =1A, I =10mA* BE(sat) C B Derating curve Maximum transient thermal impedance Saturation Voltage Base-Emitter V 0.9 V IC=1A, V =2V* BE(on) CE Turn-On Voltage Static Forward Current h 500 I =100mA, V =2V* FE C CE Transfer Ratio 400 I =1A, V =2V* C CE 150 I =2A, V =2V* C CE 3-239 3-238 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX690B ZTX690B HIGH GAIN TRANSISTOR ISSUE 1 MAY 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 45 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 400 at I =1 Amp C Transition Frequency f 150 MHz I =50mA, V =5V T C CE * Very low saturation voltage f=50MHz APPLICATIONS Input Capacitance C 200 pF V =0.5V, f=1MHz ibo EB * Darlington replacement C B Output Capacitance C 16 pF V =10V, f=1MHz E obo CB * Siren Drivers Switching Times t 33 ns I =500mA, I =50mA * Battery powered circuits on C B E-Line t 1300 ns I =50mA, V =10V off B2 CC * Motor drivers TO92 Compatible *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT THERMAL CHARACTERISTICS Collector-Base Voltage V 45 V CBO Collector-Emitter Voltage V 45 V CEO PARAMETER SYMBOL MAX. UNIT Emitter-Base Voltage V 5V EBO Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Peak Pulse Current I 6A CM Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R 70 C/W Continuous Collector Current I 2A th(j-case) C Practical Power Dissipation* P 1.5 W totp Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 2.5 200 Collector-Base Breakdown V 45 V I =100A (BR)CBO C D=1 (D.C.) Voltage 2.0 t1 D=t1/tP Collector-Emitter Breakdown V 45 V I =10mA* (BR)CEO C tP Voltage 1.5 100 D=0.5 Emitter-Base Breakdown V5V I =100A (BR)EBO E 1.0 Voltage D=0.2 Collector Cut-Off Current I 0.1 A V =35V CBO CB 0.5 D=0.1 Single Pulse Emitter Cut-Off Current I 0.1 A V =4V EBO EB 0 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector-Emitter Saturation V 0.1 V I =0.1A, I =0.5mA* CE(sat) C B T -Temperature (C) Pulse Width (seconds) Voltage 0.5 V I =1A, I =5mA* C B Base-Emitter V 0.9 V I =1A, I =10mA* BE(sat) C B Derating curve Maximum transient thermal impedance Saturation Voltage Base-Emitter V 0.9 V IC=1A, V =2V* BE(on) CE Turn-On Voltage Static Forward Current h 500 I =100mA, V =2V* FE C CE Transfer Ratio 400 I =1A, V =2V* C CE 150 I =2A, V =2V* C CE 3-239 3-238 Thermal Resistance (C/W)