Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX694B ZTX694B HIGH GAIN TRANSISTOR ISSUE 1 APRIl 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 120 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 400 at I =200mA C * Very low saturation voltage Transition Frequency f 130 MHz I =50mA, V =5V T C CE f=50MHz APPLICATIONS * Darlington replacement C Input Capacitance C 200 pF V =0.5V, f=1MHz ibo EB B E * Relay / solenoid driver Output Capacitance C 9pFV =10V, f=1MHz obo CB * Battery powered circuits E-Line * Motor drivers Switching Times t 80 ns I =100mA, I =10mA on C B TO92 Compatible t 2900 ns I =10mA, V =50V off B2 CC ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 120 V CBO Collector-Emitter Voltage V 120 V CEO THERMAL CHARACTERISTICS Emitter-Base Voltage V 5V EBO Peak Pulse Current I 1A PARAMETER SYMBOL MAX. UNIT CM Continuous Collector Current I 0.5 A C Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Practical Power Dissipation* P 1.5 W totp Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R 70 C/W th(j-case) Power Dissipation T =25C P 1 W amb tot derate above 25C 5.7 mW/C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 120 V I =100A (BR)CBO C 2.5 200 Voltage D=1 (D.C.) Collector-Emitter Breakdown V 120 V I =10mA* 2.0 t1 D=t1/tP (BR)CEO C Voltage tP 1.5 Emitter-Base Breakdown V5V I =100A (BR)EBO E 100 D=0.5 Voltage 1.0 Collector Cut-Off Current I 0.1 A V =100V CBO CB D=0.2 0.5 Emitter Cut-Off Current I 0.1 A V =4V D=0.1 EBO EB Single Pulse Collector-Emitter Saturation V 0.25 V I =100mA, I =0.5mA* 0 CE(sat) C B 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Voltage 0.5 V I =400mA, I =5mA* C B T -Temperature (C) Pulse Width (seconds) Base-Emitter V 0.9 V I =1A, I =10mA* BE(sat) C B Saturation Voltage Derating curve Maximum transient thermal impedance Base-Emitter V 0.9 V IC=1A, V =2V* BE(on) CE Turn-On Voltage Static Forward Current h 500 I =100mA, V =2V FE C CE * Transfer Ratio 400 I =200mA, V =2V* C CE 150 I =400mA, V =2V* C CE 3-245 3-244 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX694B ZTX694B HIGH GAIN TRANSISTOR ISSUE 1 APRIl 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 120 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 400 at I =200mA C * Very low saturation voltage Transition Frequency f 130 MHz I =50mA, V =5V T C CE f=50MHz APPLICATIONS * Darlington replacement C Input Capacitance C 200 pF V =0.5V, f=1MHz ibo EB B E * Relay / solenoid driver Output Capacitance C 9pFV =10V, f=1MHz obo CB * Battery powered circuits E-Line * Motor drivers Switching Times t 80 ns I =100mA, I =10mA on C B TO92 Compatible t 2900 ns I =10mA, V =50V off B2 CC ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 120 V CBO Collector-Emitter Voltage V 120 V CEO THERMAL CHARACTERISTICS Emitter-Base Voltage V 5V EBO Peak Pulse Current I 1A PARAMETER SYMBOL MAX. UNIT CM Continuous Collector Current I 0.5 A C Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Practical Power Dissipation* P 1.5 W totp Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R 70 C/W th(j-case) Power Dissipation T =25C P 1 W amb tot derate above 25C 5.7 mW/C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 120 V I =100A (BR)CBO C 2.5 200 Voltage D=1 (D.C.) Collector-Emitter Breakdown V 120 V I =10mA* 2.0 t1 D=t1/tP (BR)CEO C Voltage tP 1.5 Emitter-Base Breakdown V5V I =100A (BR)EBO E 100 D=0.5 Voltage 1.0 Collector Cut-Off Current I 0.1 A V =100V CBO CB D=0.2 0.5 Emitter Cut-Off Current I 0.1 A V =4V D=0.1 EBO EB Single Pulse Collector-Emitter Saturation V 0.25 V I =100mA, I =0.5mA* 0 CE(sat) C B 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Voltage 0.5 V I =400mA, I =5mA* C B T -Temperature (C) Pulse Width (seconds) Base-Emitter V 0.9 V I =1A, I =10mA* BE(sat) C B Saturation Voltage Derating curve Maximum transient thermal impedance Base-Emitter V 0.9 V IC=1A, V =2V* BE(on) CE Turn-On Voltage Static Forward Current h 500 I =100mA, V =2V FE C CE * Transfer Ratio 400 I =200mA, V =2V* C CE 150 I =400mA, V =2V* C CE 3-245 3-244 Thermal Resistance (C/W)