- PNP SILICON PLANAR MEDIUM POWER ZTX704 ZTX704 DARLINGTON TRANSISTORS ZTX705 ZTX705 ISSUE 3 MAY 94 ELECTRICAL CHARACTERISTICS (at T = 25C). FEATURES amb PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS. * 120 Volt V CEO * 1 Amp continuous current MIN. MAX. MIN. MAX. * Gain of 3K at I =1 Amp Static Forward h 3K 3K I =-10mA, V =-5V* C FE C CE *P =1 Watt Current Transfer 3K 3K I =-100mA, V =-5V* C CE tot Ratio 3K 30K 3K 30K I =-1A, V =-5V* C CE APPLICATIONS C 2K 2K I =-2A, V =-5V* B C CE * Lamp, solenoid and relay drivers E Transition f 160 Typical 160 Typical MHz I =-100mA, V =-10V T C CE E-Line Frequency f=20MHz TO92 Compatible ABSOLUTE MAXIMUM RATINGS. Input Capacitance C 90 Typical 90 Typical pF V =-0.5V, f=1MHz ibo EB PARAMETER SYMBOL ZTX704 ZTX705 UNIT Output Capacitance C 15 Typical 15 Typical pF V =-10V, f=1MHz obo CE Collector-Base Voltage V -120 -140 V CBO Switching Times t 0.6 Typical 0.6 Typical s I =-0.5A, V =-10V on C CE I =I =-0.5mA Collector-Emitter Voltage V -100 -120 V B1 B2 CEO t 0.8 Typical 0.8 Typical s off Emitter-Base Voltage V -10 V EBO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Peak Pulse Current I -4 A CM Continuous Collector Current I -1 A C Power Dissipation at T = 25C P 1 W 1.0 amb tot RS = 100K RS = 22K derate above 25C 5.7 mW/ C RS = 1M Operating and Storage Temperature T :T -55 to +200 C j stg 0.8 RS = Range 0.6 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS. DC Conditions 0.4 MIN. MAX. MIN. MAX. Collector-Base V -120 -140 V I =-100A 0.2 (BR)CBO C Breakdown Voltage Collector-Emitter V -100 -120 V I =-10mA* CEO(SUS) C 0 Breakdown Voltage 110 100 Emitter-Base V -10 -10 V I =-100A (BR)EBO E VCE - Collector-Emitter Voltage (Volts) Breakdown Voltage Collector Cut-Off I -0.1 A V =-100V CBO CB Voltage Derating Graph Current -0.1 A V =-120V CB -10 V =-100V, T =100C A CB amb -10 V =-120V, T =100C A CB amb Collector Cut-Off I -10 -10 A V =-80V The maximum permissible operational temperature can be obtained from this graph using CES CES Current the following equation Power(max ) Power(act) Emitter Cut-Off I -0.1 -0.1 V =-8V A EBO EB T = +25C amb ( max ) Current 0.0057 T = Maximum operating ambient temperature Collector-Emitter V -1.3 -1.3 V I =-1A, I =-1mA* amb(max) CE(sat) C B Saturation Voltage -2.5 -2.5 V I =-2A, I =-2mA* C B Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V and source resistance (R ) CE S Base-Emitter V -1.8 -1.8 V I =-1A, I =-10mA* BE(sat) C B Saturation Voltage Power(actual)= Actual power dissipation in users circuit Base-Emitter V -1.7 -1.7 V IC=-1A, V =-5V* BE(on) CE Turn-On Voltage 3-251 3-250 Maximum Power Dissipation (W)- PNP SILICON PLANAR MEDIUM POWER ZTX704 ZTX704 DARLINGTON TRANSISTORS ZTX705 ZTX705 ISSUE 3 MAY 94 ELECTRICAL CHARACTERISTICS (at T = 25C). FEATURES amb PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS. * 120 Volt V CEO * 1 Amp continuous current MIN. MAX. MIN. MAX. * Gain of 3K at I =1 Amp Static Forward h 3K 3K I =-10mA, V =-5V* C FE C CE *P =1 Watt Current Transfer 3K 3K I =-100mA, V =-5V* C CE tot Ratio 3K 30K 3K 30K I =-1A, V =-5V* C CE APPLICATIONS C 2K 2K I =-2A, V =-5V* B C CE * Lamp, solenoid and relay drivers E Transition f 160 Typical 160 Typical MHz I =-100mA, V =-10V T C CE E-Line Frequency f=20MHz TO92 Compatible ABSOLUTE MAXIMUM RATINGS. Input Capacitance C 90 Typical 90 Typical pF V =-0.5V, f=1MHz ibo EB PARAMETER SYMBOL ZTX704 ZTX705 UNIT Output Capacitance C 15 Typical 15 Typical pF V =-10V, f=1MHz obo CE Collector-Base Voltage V -120 -140 V CBO Switching Times t 0.6 Typical 0.6 Typical s I =-0.5A, V =-10V on C CE I =I =-0.5mA Collector-Emitter Voltage V -100 -120 V B1 B2 CEO t 0.8 Typical 0.8 Typical s off Emitter-Base Voltage V -10 V EBO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Peak Pulse Current I -4 A CM Continuous Collector Current I -1 A C Power Dissipation at T = 25C P 1 W 1.0 amb tot RS = 100K RS = 22K derate above 25C 5.7 mW/ C RS = 1M Operating and Storage Temperature T :T -55 to +200 C j stg 0.8 RS = Range 0.6 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS. DC Conditions 0.4 MIN. MAX. MIN. MAX. Collector-Base V -120 -140 V I =-100A 0.2 (BR)CBO C Breakdown Voltage Collector-Emitter V -100 -120 V I =-10mA* CEO(SUS) C 0 Breakdown Voltage 110 100 Emitter-Base V -10 -10 V I =-100A (BR)EBO E VCE - Collector-Emitter Voltage (Volts) Breakdown Voltage Collector Cut-Off I -0.1 A V =-100V CBO CB Voltage Derating Graph Current -0.1 A V =-120V CB -10 V =-100V, T =100C A CB amb -10 V =-120V, T =100C A CB amb Collector Cut-Off I -10 -10 A V =-80V The maximum permissible operational temperature can be obtained from this graph using CES CES Current the following equation Power(max ) Power(act) Emitter Cut-Off I -0.1 -0.1 V =-8V A EBO EB T = +25C amb ( max ) Current 0.0057 T = Maximum operating ambient temperature Collector-Emitter V -1.3 -1.3 V I =-1A, I =-1mA* amb(max) CE(sat) C B Saturation Voltage -2.5 -2.5 V I =-2A, I =-2mA* C B Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V and source resistance (R ) CE S Base-Emitter V -1.8 -1.8 V I =-1A, I =-10mA* BE(sat) C B Saturation Voltage Power(actual)= Actual power dissipation in users circuit Base-Emitter V -1.7 -1.7 V IC=-1A, V =-5V* BE(on) CE Turn-On Voltage 3-251 3-250 Maximum Power Dissipation (W)