Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR ZTX749 ZTX749 MEDIUM POWER TRANSISTOR ISSUE 1 APRIL 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb FEATURES PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 25 Volt V CEO * 2 Amp continuous current Transition f 100 160 MHz I =-100mA, T C * Low saturation voltage Frequency V =-5V f=100MHz CE C Output Cpacitance C 55 100 pF V =-10V f=1MHz obo CB B E Switching Times t 40 ns I =-500mA, on C E-Line V =-10V CC TO92 Compatible t 450 ns I =I =-50mA off B1 B2 ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -35 V CBO Collector-Emitter Voltage V -25 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -6 A THERMAL CHARACTERISTICS CM Continuous Collector Current I -2 A C PARAMETER SYMBOL MAX. UNIT Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/ C Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Operating and Storage Temperature Range T T -55 to +200 C Junction to Ambient R 116 C/W j: stg 2 th(j-amb)2 Junction to Case R 70 C/W th(j-case) ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -35 V I =-100A, I =0 (BR)CBO C E Breakdown Voltage Collector-Emitter V -25 V I =-10mA, I =0* (BR)CEO C B Breakdown Voltage 2.5 200 Emitter-Base V -5 V I =-100A, I =0 (BR)EBO E C D=1 (D.C.) Breakdown Voltage 2.0 t1 D=t1/tP Collector Cut-Off I -0.1 A V =-30V CBO CB tP Current -10 A V =-30V,T =100C 1.5 CB amb 100 D=0.5 Emitter Cut-Off Current I -0.1 V =-4V, I =0 A EBO EB E 1.0 Collector-Emitter V -0.12 -0.3 V I =1A, I =-100mA* D=0.2 CE(sat) C B 0.5 Saturation Voltage -0.23 -0.5 V I =2A, I =-200mA* D=0.1 C B Single Pulse 0 0 Base-Emitter V -0.9 -1.25 V I =1A, I =-100mA* BE(sat) C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Saturation Voltage T -Temperature (C) Pulse Width (seconds) Base-Emitter V -0.8 -1 V IC=-1A, V =-2V* BE(on) CE Turn-On Voltage Derating curve Maximum transient thermal impedance Static Forward Current h 70 200 I =-50mA, V =-2V* FE C CE Transfer Ratio 100 200 300 I =-1A, V =-2V* C CE 75 150 I =-2A, V =-2V* C CE 15 50 I =-6A, V =-2V* C CE *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-255 3-254 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR ZTX749 ZTX749 MEDIUM POWER TRANSISTOR ISSUE 1 APRIL 94 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb FEATURES PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 25 Volt V CEO * 2 Amp continuous current Transition f 100 160 MHz I =-100mA, T C * Low saturation voltage Frequency V =-5V f=100MHz CE C Output Cpacitance C 55 100 pF V =-10V f=1MHz obo CB B E Switching Times t 40 ns I =-500mA, on C E-Line V =-10V CC TO92 Compatible t 450 ns I =I =-50mA off B1 B2 ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -35 V CBO Collector-Emitter Voltage V -25 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -6 A THERMAL CHARACTERISTICS CM Continuous Collector Current I -2 A C PARAMETER SYMBOL MAX. UNIT Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/ C Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Operating and Storage Temperature Range T T -55 to +200 C Junction to Ambient R 116 C/W j: stg 2 th(j-amb)2 Junction to Case R 70 C/W th(j-case) ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -35 V I =-100A, I =0 (BR)CBO C E Breakdown Voltage Collector-Emitter V -25 V I =-10mA, I =0* (BR)CEO C B Breakdown Voltage 2.5 200 Emitter-Base V -5 V I =-100A, I =0 (BR)EBO E C D=1 (D.C.) Breakdown Voltage 2.0 t1 D=t1/tP Collector Cut-Off I -0.1 A V =-30V CBO CB tP Current -10 A V =-30V,T =100C 1.5 CB amb 100 D=0.5 Emitter Cut-Off Current I -0.1 V =-4V, I =0 A EBO EB E 1.0 Collector-Emitter V -0.12 -0.3 V I =1A, I =-100mA* D=0.2 CE(sat) C B 0.5 Saturation Voltage -0.23 -0.5 V I =2A, I =-200mA* D=0.1 C B Single Pulse 0 0 Base-Emitter V -0.9 -1.25 V I =1A, I =-100mA* BE(sat) C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Saturation Voltage T -Temperature (C) Pulse Width (seconds) Base-Emitter V -0.8 -1 V IC=-1A, V =-2V* BE(on) CE Turn-On Voltage Derating curve Maximum transient thermal impedance Static Forward Current h 70 200 I =-50mA, V =-2V* FE C CE Transfer Ratio 100 200 300 I =-1A, V =-2V* C CE 75 150 I =-2A, V =-2V* C CE 15 50 I =-6A, V =-2V* C CE *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-255 3-254 Thermal Resistance (C/W)