Max Power Dissi ation - (Watts) Case temperature Ambient temperature ZTX752 Not Recommended for New Design Please Use ZTX753 PNP SILICON PLANAR ZTX752 ZTX752 MEDIUM POWER TRANSISTORS ZTX753 ZTX753 ISSUE 2 JULY 94 ELECTRICAL CHARACTERISTICS (at T = 25C). FEATURES amb * 100 Volt V ZTX752 ZTX753 CEO PARAMETER SYMBOL UNIT CONDITIONS. * 2 Amp continuous current MIN. TYP. MAX. MIN. TYP. MAX. * Low saturation voltage *P =1 Watt tot Transition f 100 140 100 140 MHz I =-100mA, V =-5V C T C CE B Frequency f=100MHz E Switching Times t 40 40 ns I =-500mA, V =-10V on C CC E-Line I =I =-50mA B1 B2 TO92 Compatible t 600 600 ns off ABSOLUTE MAXIMUM RATINGS. Output C 30 30 pF V =10V f=1MHz obo CB PARAMETER SYMBOL ZTX752 ZTX753 UNIT Capacitance Collector-Base Voltage V -100 -120 V CBO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Collector-Emitter Voltage V -80 -100 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -6 A CM Continuous Collector Current I -2 A C THERMAL CHARACTERISTICS Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C PARAMETER SYMBOL MAX. UNIT Operating and Storage Temperature Range T :T -55 to +200 C j stg Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R 70 C/W th(j-case) ZTX752 ZTX753 PARAMETER SYMBOL UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Collector-Base V -100 -120 V I =-100A (BR)CBO C Breakdown Voltage 2.5 200 Collector-Emitter V -80 -100 V I =-10mA* (BR)CEO C Breakdown D=1 (D.C.) Voltage 2.0 t1 D=t1/tP Emitter-Base V -5 -5 V I =-100A (BR)EBO E tP Breakdown 1.5 Voltage 100 D=0.5 1.0 Collector Cut-Off I -0.1 A V =-80V CBO CB Current -0.1 A V =-100V CB D=0.2 -10 V =-80V,T =100C 0.5 A CB amb D=0.1 -10 V =-100V,T =100C A Single Pulse CB amb 0 0 -40 -20 0 20 0.0001 0.001 0.01 0.1 1 10 100 40 60 80 100 120 140 160 180 200 Emitter Cut-Off I -0.1 -0.1 A V =-4V EBO EB T -Temperature (C) Pulse Width (seconds) Current Collector-Emitter V -0.17 -0.3 -0.17 -0.3 V I =-1A, I =-100mA* Derating curve Maximum transient thermal impedance CE(sat) C B Saturation Voltage -0.30 -0.5 -0.30 -0.5 V I =-2A, I =-200mA* C B Base-Emitter V -0.9 -1.25 -0.9 -1.25 V I =-1A, I =-100mA* BE(sat) C B Saturation Voltage Base-Emitter V -0.8 -1 -0.8 -1 V IC=-1A, V =-2V* BE(on) CE Turn-On Voltage 3-261 3-260 Thermal Resistance (C/W)Max Power Dissi ation - (Watts) Case temperature Ambient temperature ZTX752 Not Recommended for New Design Please Use ZTX753 PNP SILICON PLANAR ZTX752 ZTX752 MEDIUM POWER TRANSISTORS ZTX753 ZTX753 ISSUE 2 JULY 94 ELECTRICAL CHARACTERISTICS (at T = 25C). FEATURES amb * 100 Volt V ZTX752 ZTX753 CEO PARAMETER SYMBOL UNIT CONDITIONS. * 2 Amp continuous current MIN. TYP. MAX. MIN. TYP. MAX. * Low saturation voltage *P =1 Watt tot Transition f 100 140 100 140 MHz I =-100mA, V =-5V C T C CE B Frequency f=100MHz E Switching Times t 40 40 ns I =-500mA, V =-10V on C CC E-Line I =I =-50mA B1 B2 TO92 Compatible t 600 600 ns off ABSOLUTE MAXIMUM RATINGS. Output C 30 30 pF V =10V f=1MHz obo CB PARAMETER SYMBOL ZTX752 ZTX753 UNIT Capacitance Collector-Base Voltage V -100 -120 V CBO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Collector-Emitter Voltage V -80 -100 V CEO Emitter-Base Voltage V -5 V EBO Peak Pulse Current I -6 A CM Continuous Collector Current I -2 A C THERMAL CHARACTERISTICS Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C PARAMETER SYMBOL MAX. UNIT Operating and Storage Temperature Range T :T -55 to +200 C j stg Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R 70 C/W th(j-case) ZTX752 ZTX753 PARAMETER SYMBOL UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Collector-Base V -100 -120 V I =-100A (BR)CBO C Breakdown Voltage 2.5 200 Collector-Emitter V -80 -100 V I =-10mA* (BR)CEO C Breakdown D=1 (D.C.) Voltage 2.0 t1 D=t1/tP Emitter-Base V -5 -5 V I =-100A (BR)EBO E tP Breakdown 1.5 Voltage 100 D=0.5 1.0 Collector Cut-Off I -0.1 A V =-80V CBO CB Current -0.1 A V =-100V CB D=0.2 -10 V =-80V,T =100C 0.5 A CB amb D=0.1 -10 V =-100V,T =100C A Single Pulse CB amb 0 0 -40 -20 0 20 0.0001 0.001 0.01 0.1 1 10 100 40 60 80 100 120 140 160 180 200 Emitter Cut-Off I -0.1 -0.1 A V =-4V EBO EB T -Temperature (C) Pulse Width (seconds) Current Collector-Emitter V -0.17 -0.3 -0.17 -0.3 V I =-1A, I =-100mA* Derating curve Maximum transient thermal impedance CE(sat) C B Saturation Voltage -0.30 -0.5 -0.30 -0.5 V I =-2A, I =-200mA* C B Base-Emitter V -0.9 -1.25 -0.9 -1.25 V I =-1A, I =-100mA* BE(sat) C B Saturation Voltage Base-Emitter V -0.8 -1 -0.8 -1 V IC=-1A, V =-2V* BE(on) CE Turn-On Voltage 3-261 3-260 Thermal Resistance (C/W)