VBE - (Volts) hFE - Normalised Gain (%) VCE(sat) - (mV) IC - Collector Current (Amps) VBE(sat) - (Volts) Switching time PNP SILICON PLANAR MEDIUM POWER ZTX756 ZTX756 HIGH VOLTAGE TRANSISTORS ZTX757 ZTX757 ISSUE 2 JULY 94 FEATURES TYPICAL CHARACTERISTICS * 300 Volt V td CEO tr * 0.5 Amp continuous current ts tf s s I =I =I /10 250 B1 B2 C *P = 1 Watt VCE=10V tot 4 1.6 IC/IB=10 1.4 200 C 3 1.2 ts B E 1.0 tf 0.8 2 E-Line 150 td 0.6 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. tr 1 0.4 tf 100 PARAMETER SYMBOL ZTX756 ZTX757 UNIT 0.2 ts tr td 0 Collector-Base Voltage V -200 -300 V CBO 0.0001 0.001 0.01 0.1 1 0.01 0.1 1 Collector-Emitter Voltage V -200 -300 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V -5 V EBO VCE(sat) v IC Switching Speeds Peak Pulse Current I -1 A CM Continuous Collector Current I -0.5 A C Power Dissipation at T =25C P 1W amb tot 1.2 100 Operating and Storage Temperature T :T -55 to +200 C j stg Range 80 1.0 IC/IB=10 VCE=5V ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 60 0.8 PARAMETER SYMBOL ZTX756 ZTX757 UNIT CONDITIONS. 40 0.6 MIN. MAX. MIN. MAX. Collector-Base V -200 -300 V 20 I =-100A, I =0 (BR)CBO C E 0.4 Breakdown Voltage 0 0.0001 Collector-Emitter V -200 -300 V I =-10mA, I =0* 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 (BR)CEO C B Breakdown Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base V -5 -5 V I =-100A, I =0 (BR)EBO E C Breakdown Voltage hFE v IC VBE(sat) v IC Collector Cut-Off I -100 nA V =-160V, I =0 CBO CB E Single Pulse Test at Tamb=25C Current -100 nA V =-200V, I =0 CB E 1.0 1.2 Emitter Cut-Off I -100 -100 nA V =-3V, I =0 EBO EB C Current 1.0 Collector-Emitter V -0.5 -0.5 V I =-100mA, CE(sat) C 0.1 VCE=5V Saturation Voltage I =-10mA* B 0.8 Base-Emitter V -1.0 -1.0 V I =-100mA, D.C. BE(sat) C 1s Saturation Voltage I =-10mA* B 100ms 0.6 10ms 0.01 1.0ms Base-Emitter V -1.0 -1.0 V IC=-100mA, V =-5V* BE(on) CE 300s Turn-On Voltage 0.4 ZTX756 Static Forward h 50 50 I =-100mA, V =-5V* FE C CE 0.0001 0.001 0.01 0.1 1 ZTX757 Current Transfer 40 40 I =-10mA, V =-5V* C CE 0.001 1110 100000 Ratio IC - Collector Current (Amps) VCE - Collector Voltage (Volts) Transition f 30 30 MHz I =-10mA, V =-20V T C CE Frequency f=20MHz VBE(on) v IC Safe Operating Area Output Capacitance C 20 20 pF V =-20V, f=1MHz obo CB 3-266 3-265 VBE - (Volts) hFE - Normalised Gain (%) VCE(sat) - (mV) IC - Collector Current (Amps) VBE(sat) - (Volts) Switching time PNP SILICON PLANAR MEDIUM POWER ZTX756 ZTX756 HIGH VOLTAGE TRANSISTORS ZTX757 ZTX757 ISSUE 2 JULY 94 FEATURES TYPICAL CHARACTERISTICS * 300 Volt V td CEO tr * 0.5 Amp continuous current ts tf s s I =I =I /10 250 B1 B2 C *P = 1 Watt VCE=10V tot 4 1.6 IC/IB=10 1.4 200 C 3 1.2 ts B E 1.0 tf 0.8 2 E-Line 150 td 0.6 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. tr 1 0.4 tf 100 PARAMETER SYMBOL ZTX756 ZTX757 UNIT 0.2 ts tr td 0 Collector-Base Voltage V -200 -300 V CBO 0.0001 0.001 0.01 0.1 1 0.01 0.1 1 Collector-Emitter Voltage V -200 -300 V CEO IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base Voltage V -5 V EBO VCE(sat) v IC Switching Speeds Peak Pulse Current I -1 A CM Continuous Collector Current I -0.5 A C Power Dissipation at T =25C P 1W amb tot 1.2 100 Operating and Storage Temperature T :T -55 to +200 C j stg Range 80 1.0 IC/IB=10 VCE=5V ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 60 0.8 PARAMETER SYMBOL ZTX756 ZTX757 UNIT CONDITIONS. 40 0.6 MIN. MAX. MIN. MAX. Collector-Base V -200 -300 V 20 I =-100A, I =0 (BR)CBO C E 0.4 Breakdown Voltage 0 0.0001 Collector-Emitter V -200 -300 V I =-10mA, I =0* 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 (BR)CEO C B Breakdown Voltage IC - Collector Current (Amps) IC - Collector Current (Amps) Emitter-Base V -5 -5 V I =-100A, I =0 (BR)EBO E C Breakdown Voltage hFE v IC VBE(sat) v IC Collector Cut-Off I -100 nA V =-160V, I =0 CBO CB E Single Pulse Test at Tamb=25C Current -100 nA V =-200V, I =0 CB E 1.0 1.2 Emitter Cut-Off I -100 -100 nA V =-3V, I =0 EBO EB C Current 1.0 Collector-Emitter V -0.5 -0.5 V I =-100mA, CE(sat) C 0.1 VCE=5V Saturation Voltage I =-10mA* B 0.8 Base-Emitter V -1.0 -1.0 V I =-100mA, D.C. BE(sat) C 1s Saturation Voltage I =-10mA* B 100ms 0.6 10ms 0.01 1.0ms Base-Emitter V -1.0 -1.0 V IC=-100mA, V =-5V* BE(on) CE 300s Turn-On Voltage 0.4 ZTX756 Static Forward h 50 50 I =-100mA, V =-5V* FE C CE 0.0001 0.001 0.01 0.1 1 ZTX757 Current Transfer 40 40 I =-10mA, V =-5V* C CE 0.001 1110 100000 Ratio IC - Collector Current (Amps) VCE - Collector Voltage (Volts) Transition f 30 30 MHz I =-10mA, V =-20V T C CE Frequency f=20MHz VBE(on) v IC Safe Operating Area Output Capacitance C 20 20 pF V =-20V, f=1MHz obo CB 3-266 3-265