VBE - (Volts)
hFE - Normalised Gain (%)
VCE(sat) - (mV)
IC - Collector Current (Amps)
VBE(sat) - (Volts)
Switching time
PNP SILICON PLANAR MEDIUM POWER
ZTX756 ZTX756
HIGH VOLTAGE TRANSISTORS
ZTX757 ZTX757
ISSUE 2 JULY 94
FEATURES
TYPICAL CHARACTERISTICS
* 300 Volt V
td CEO
tr
* 0.5 Amp continuous current
ts tf
s s
I =I =I /10
250 B1 B2 C
*P = 1 Watt
VCE=10V
tot
4 1.6
IC/IB=10
1.4
200
C
3 1.2
ts
B
E
1.0
tf
0.8
2 E-Line
150
td
0.6
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
tr
1 0.4
tf
100 PARAMETER SYMBOL ZTX756 ZTX757 UNIT
0.2
ts
tr td
0
Collector-Base Voltage V -200 -300 V
CBO
0.0001 0.001 0.01 0.1 1 0.01 0.1 1
Collector-Emitter Voltage V -200 -300 V
CEO
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage V -5 V
EBO
VCE(sat) v IC Switching Speeds Peak Pulse Current I -1 A
CM
Continuous Collector Current I -0.5 A
C
Power Dissipation at T =25C P 1W
amb tot
1.2
100
Operating and Storage Temperature T :T -55 to +200 C
j stg
Range
80 1.0
IC/IB=10
VCE=5V
ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
amb
60
0.8
PARAMETER SYMBOL ZTX756 ZTX757 UNIT CONDITIONS.
40
0.6 MIN. MAX. MIN. MAX.
Collector-Base V -200 -300 V
20 I =-100A, I =0
(BR)CBO
C E
0.4
Breakdown Voltage
0
0.0001 Collector-Emitter V -200 -300 V I =-10mA, I =0*
0.0001 0.001 0.01 0.1 1
0.001 0.01 0.1 1 (BR)CEO C B
Breakdown Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base V -5 -5 V I =-100A, I =0
(BR)EBO E C
Breakdown Voltage
hFE v IC VBE(sat) v IC
Collector Cut-Off I -100 nA V =-160V, I =0
CBO CB E
Single Pulse Test at Tamb=25C
Current -100 nA V =-200V, I =0
CB E
1.0
1.2
Emitter Cut-Off I -100 -100 nA V =-3V, I =0
EBO EB C
Current
1.0
Collector-Emitter V -0.5 -0.5 V I =-100mA,
CE(sat) C
0.1
VCE=5V
Saturation Voltage I =-10mA*
B
0.8
Base-Emitter V -1.0 -1.0 V I =-100mA,
D.C.
BE(sat) C
1s
Saturation Voltage I =-10mA*
B
100ms
0.6
10ms
0.01 1.0ms
Base-Emitter V -1.0 -1.0 V IC=-100mA, V =-5V*
BE(on) CE
300s
Turn-On Voltage
0.4
ZTX756
Static Forward h 50 50 I =-100mA, V =-5V*
FE C CE
0.0001
0.001 0.01 0.1 1 ZTX757
Current Transfer 40 40 I =-10mA, V =-5V*
C CE
0.001
1110 100000 Ratio
IC - Collector Current (Amps) VCE - Collector Voltage (Volts)
Transition f 30 30 MHz I =-10mA, V =-20V
T C CE
Frequency f=20MHz
VBE(on) v IC Safe Operating Area
Output Capacitance C 20 20 pF V =-20V, f=1MHz
obo CB
3-266 3-265 VBE - (Volts)
hFE - Normalised Gain (%)
VCE(sat) - (mV)
IC - Collector Current (Amps)
VBE(sat) - (Volts)
Switching time
PNP SILICON PLANAR MEDIUM POWER
ZTX756 ZTX756
HIGH VOLTAGE TRANSISTORS
ZTX757 ZTX757
ISSUE 2 JULY 94
FEATURES
TYPICAL CHARACTERISTICS
* 300 Volt V
td CEO
tr
* 0.5 Amp continuous current
ts tf
s s
I =I =I /10
250 B1 B2 C
*P = 1 Watt
VCE=10V
tot
4 1.6
IC/IB=10
1.4
200
C
3 1.2
ts
B
E
1.0
tf
0.8
2 E-Line
150
td
0.6
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
tr
1 0.4
tf
100 PARAMETER SYMBOL ZTX756 ZTX757 UNIT
0.2
ts
tr td
0
Collector-Base Voltage V -200 -300 V
CBO
0.0001 0.001 0.01 0.1 1 0.01 0.1 1
Collector-Emitter Voltage V -200 -300 V
CEO
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage V -5 V
EBO
VCE(sat) v IC Switching Speeds Peak Pulse Current I -1 A
CM
Continuous Collector Current I -0.5 A
C
Power Dissipation at T =25C P 1W
amb tot
1.2
100
Operating and Storage Temperature T :T -55 to +200 C
j stg
Range
80 1.0
IC/IB=10
VCE=5V
ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated).
amb
60
0.8
PARAMETER SYMBOL ZTX756 ZTX757 UNIT CONDITIONS.
40
0.6 MIN. MAX. MIN. MAX.
Collector-Base V -200 -300 V
20 I =-100A, I =0
(BR)CBO
C E
0.4
Breakdown Voltage
0
0.0001 Collector-Emitter V -200 -300 V I =-10mA, I =0*
0.0001 0.001 0.01 0.1 1
0.001 0.01 0.1 1 (BR)CEO C B
Breakdown Voltage
IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base V -5 -5 V I =-100A, I =0
(BR)EBO E C
Breakdown Voltage
hFE v IC VBE(sat) v IC
Collector Cut-Off I -100 nA V =-160V, I =0
CBO CB E
Single Pulse Test at Tamb=25C
Current -100 nA V =-200V, I =0
CB E
1.0
1.2
Emitter Cut-Off I -100 -100 nA V =-3V, I =0
EBO EB C
Current
1.0
Collector-Emitter V -0.5 -0.5 V I =-100mA,
CE(sat) C
0.1
VCE=5V
Saturation Voltage I =-10mA*
B
0.8
Base-Emitter V -1.0 -1.0 V I =-100mA,
D.C.
BE(sat) C
1s
Saturation Voltage I =-10mA*
B
100ms
0.6
10ms
0.01 1.0ms
Base-Emitter V -1.0 -1.0 V IC=-100mA, V =-5V*
BE(on) CE
300s
Turn-On Voltage
0.4
ZTX756
Static Forward h 50 50 I =-100mA, V =-5V*
FE C CE
0.0001
0.001 0.01 0.1 1 ZTX757
Current Transfer 40 40 I =-10mA, V =-5V*
C CE
0.001
1110 100000 Ratio
IC - Collector Current (Amps) VCE - Collector Voltage (Volts)
Transition f 30 30 MHz I =-10mA, V =-20V
T C CE
Frequency f=20MHz
VBE(on) v IC Safe Operating Area
Output Capacitance C 20 20 pF V =-20V, f=1MHz
obo CB
3-266 3-265