Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX788A ZTX788A HIGH GAIN TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 15 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 200 at I =2 Amps C * Very low saturation voltage Transition Frequency f 100 150 MHz I =-50mA, V =-5V T C CE f=50MHz C Output Capacitance C 30 60 pF V =-10V, f=1MHz obo CB B E Switching Times t 40 ns I =-500mA, I =-50mA on C B1 t 500 ns I =-50mA, V =-10V E-Line off B2 CC TO92 Compatible *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT THERMAL CHARACTERISTICS Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -15 V CEO PARAMETER SYMBOL MAX. UNIT Emitter-Base Voltage V -5 V EBO Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Peak Pulse Current I -10 A CM Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R 70 C/W Continuous Collector Current I -3 A th(j-case) C Practical Power Dissipation* P 1.5 W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. totp Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -20 -30 V I =-100A (BR)CBO C 2.5 200 Voltage D=1 (D.C.) Collector-Emitter Breakdown V -15 -20 V I =-10mA* (BR)CEO C 2.0 t1 D=t1/tP Voltage Emitter-Base Breakdown V -5 -8.5 V I =-100A tP (BR)EBO E 1.5 Voltage 100 D=0.5 Collector Cut-Off Current I -0.1 A V =-10V 1.0 CBO CB -10 V =-10V, T =100C A CB amb D=0.2 0.5 Emitter Cut-Off Current I -0.1 A V =-4V D=0.1 EBO EB Single Pulse Collector-Emitter Saturation V -0.025 -0.035 V I =-0.1A, I =-2mA* CE(sat) C B 0 0 Voltage -0.25 -0.32 V I =-2A, I =-20mA* -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 C B -0.28 -0.33 V I =-3A, I =-200mA* C B T -Temperature (C) Pulse Width (seconds) Base-Emitter V -0.85 -1.0 V I =-2A, I =-20mA* BE(sat) C B Derating curve Maximum transient thermal impedance Saturation Voltage Base-Emitter V -0.8 V IC=-2A, V =-3V* BE(on) CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-1V* FE C CE Transfer Ratio 250 I =-1A, V =-1V* C CE 200 I =-2A, V =-1V* C CE 80 I =-10A, V =-2V* C CE 3-272 3-271 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX788A ZTX788A HIGH GAIN TRANSISTOR PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 15 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 200 at I =2 Amps C * Very low saturation voltage Transition Frequency f 100 150 MHz I =-50mA, V =-5V T C CE f=50MHz C Output Capacitance C 30 60 pF V =-10V, f=1MHz obo CB B E Switching Times t 40 ns I =-500mA, I =-50mA on C B1 t 500 ns I =-50mA, V =-10V E-Line off B2 CC TO92 Compatible *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT THERMAL CHARACTERISTICS Collector-Base Voltage V -20 V CBO Collector-Emitter Voltage V -15 V CEO PARAMETER SYMBOL MAX. UNIT Emitter-Base Voltage V -5 V EBO Thermal Resistance:Junction to Ambient R 175 C/W 1 th(j-amb)1 Peak Pulse Current I -10 A CM Junction to Ambient R 116 C/W 2 th(j-amb)2 Junction to Case R 70 C/W Continuous Collector Current I -3 A th(j-case) C Practical Power Dissipation* P 1.5 W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. totp Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -20 -30 V I =-100A (BR)CBO C 2.5 200 Voltage D=1 (D.C.) Collector-Emitter Breakdown V -15 -20 V I =-10mA* (BR)CEO C 2.0 t1 D=t1/tP Voltage Emitter-Base Breakdown V -5 -8.5 V I =-100A tP (BR)EBO E 1.5 Voltage 100 D=0.5 Collector Cut-Off Current I -0.1 A V =-10V 1.0 CBO CB -10 V =-10V, T =100C A CB amb D=0.2 0.5 Emitter Cut-Off Current I -0.1 A V =-4V D=0.1 EBO EB Single Pulse Collector-Emitter Saturation V -0.025 -0.035 V I =-0.1A, I =-2mA* CE(sat) C B 0 0 Voltage -0.25 -0.32 V I =-2A, I =-20mA* -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 C B -0.28 -0.33 V I =-3A, I =-200mA* C B T -Temperature (C) Pulse Width (seconds) Base-Emitter V -0.85 -1.0 V I =-2A, I =-20mA* BE(sat) C B Derating curve Maximum transient thermal impedance Saturation Voltage Base-Emitter V -0.8 V IC=-2A, V =-3V* BE(on) CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-1V* FE C CE Transfer Ratio 250 I =-1A, V =-1V* C CE 200 I =-2A, V =-1V* C CE 80 I =-10A, V =-2V* C CE 3-272 3-271 Thermal Resistance (C/W)