Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX789A ZTX789A HIGH GAIN TRANSISTOR ISSUE 2 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 25 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 200 at I =2 Amps C * Very low saturation voltage Transition Frequency f 100 MHz I =-50mA, V =-5V T C CE f=50MHz APPLICATIONS * Darlington replacement C Input Capacitance C 225 pF V =-0.5V, f=1MHz ibo EB B E * Battery powered circuits Output Capacitance C 25 pF V =-10V, f=1MHz obo CB * Motor drivers E-Line Switching Times t 35 ns I =-500mA, I =-50mA on C B1 TO92 Compatible t 400 ns I =-50mA, V =-10V off B2 CC ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT THERMAL CHARACTERISTICS Collector-Base Voltage V -25 V CBO PARAMETER SYMBOL MAX. UNIT Collector-Emitter Voltage V -25 V CEO Emitter-Base Voltage V -5 V EBO Thermal Resistance: Junction to Ambient R 175 C/W 1 th(j-amb)1 Junction to Ambient R 116 C/W 2 th(j-amb)2 Peak Pulse Current I -8 A CM R Junction to Case 70 C/W th(j-case) Continuous Collector Current I -3 A C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Practical Power Dissipation* P 1.5 W totp Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -25 V I =-100A (BR)CBO C 2.5 200 Voltage D=1 (D.C.) Collector-Emitter Breakdown V -25 V I =-10mA* (BR)CEO C 2.0 t1 D=t1/tP Voltage tP Emitter-Base Breakdown V -5 V I =-100A 1.5 (BR)EBO E Voltage 100 D=0.5 1.0 Collector Cut-Off Current I -0.1 V =-15V A CBO CB D=0.2 Emitter Cut-Off Current I -0.1 A V =-4V EBO EB 0.5 D=0.1 Single Pulse Collector-Emitter Saturation V -0.25 V I =-1A, I =-10mA* CE(sat) C B 0 0 Voltage -0.45 V I =-2A, I =-20mA* C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 -0.5 V I =-3A, I =-100mA* C B T -Temperature (C) Pulse Width (seconds) Base-Emitter V -1.0 V I =-1A, I =-10mA* BE(sat) C B Saturation Voltage Derating curve Maximum transient thermal impedance Base-Emitter V -0.8 V IC=-1A, V =-2V* BE(on) CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-2V FE C CE Transfer Ratio 250 I =-1A, V =-2V* C CE 200 I =-2A, V =-2V* C CE 100 I =-6A, V =-2V* C CE 3-277 3-276 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX789A ZTX789A HIGH GAIN TRANSISTOR ISSUE 2 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 25 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 200 at I =2 Amps C * Very low saturation voltage Transition Frequency f 100 MHz I =-50mA, V =-5V T C CE f=50MHz APPLICATIONS * Darlington replacement C Input Capacitance C 225 pF V =-0.5V, f=1MHz ibo EB B E * Battery powered circuits Output Capacitance C 25 pF V =-10V, f=1MHz obo CB * Motor drivers E-Line Switching Times t 35 ns I =-500mA, I =-50mA on C B1 TO92 Compatible t 400 ns I =-50mA, V =-10V off B2 CC ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT THERMAL CHARACTERISTICS Collector-Base Voltage V -25 V CBO PARAMETER SYMBOL MAX. UNIT Collector-Emitter Voltage V -25 V CEO Emitter-Base Voltage V -5 V EBO Thermal Resistance: Junction to Ambient R 175 C/W 1 th(j-amb)1 Junction to Ambient R 116 C/W 2 th(j-amb)2 Peak Pulse Current I -8 A CM R Junction to Case 70 C/W th(j-case) Continuous Collector Current I -3 A C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Practical Power Dissipation* P 1.5 W totp Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -25 V I =-100A (BR)CBO C 2.5 200 Voltage D=1 (D.C.) Collector-Emitter Breakdown V -25 V I =-10mA* (BR)CEO C 2.0 t1 D=t1/tP Voltage tP Emitter-Base Breakdown V -5 V I =-100A 1.5 (BR)EBO E Voltage 100 D=0.5 1.0 Collector Cut-Off Current I -0.1 V =-15V A CBO CB D=0.2 Emitter Cut-Off Current I -0.1 A V =-4V EBO EB 0.5 D=0.1 Single Pulse Collector-Emitter Saturation V -0.25 V I =-1A, I =-10mA* CE(sat) C B 0 0 Voltage -0.45 V I =-2A, I =-20mA* C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 -0.5 V I =-3A, I =-100mA* C B T -Temperature (C) Pulse Width (seconds) Base-Emitter V -1.0 V I =-1A, I =-10mA* BE(sat) C B Saturation Voltage Derating curve Maximum transient thermal impedance Base-Emitter V -0.8 V IC=-1A, V =-2V* BE(on) CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-2V FE C CE Transfer Ratio 250 I =-1A, V =-2V* C CE 200 I =-2A, V =-2V* C CE 100 I =-6A, V =-2V* C CE 3-277 3-276 Thermal Resistance (C/W)