Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX792A ZTX792A HIGH GAIN TRANSISTOR ISSUE 2 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 70 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 400 at I =3 Amps C * Very low saturation voltage Transition Frequency f 100 MHz I =-50mA, V =-5V T C CE f=50MHz APPLICATIONS * Darlington replacement C Input Capacitance C 225 pF V =-0.5V, f=1MHz ibo EB B E * Flash gun convertors Output Capacitance C 22 pF V =-10V, f=1MHz obo CB * Battery powered circuits E-Line * Motor drivers Switching Times t 35 ns I =-500mA, I =-50mA on C B1 TO92 Compatible t 750 ns I =-50mA, V =-10V off B2 CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT THERMAL CHARACTERISTICS Collector-Base Voltage V -75 V CBO PARAMETER SYMBOL MAX. UNIT Collector-Emitter Voltage V -70 V CEO Thermal Resistance: Junction to Ambient R 175 C/W Emitter-Base Voltage V -5 V 1 th(j-amb)1 EBO Junction to Ambient R 116 C/W 2 th(j-amb)2 Peak Pulse Current I -4 A CM Junction to Case R 70 C/W th(j-case) Continuous Collector Current I -2 A C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Practical Power Dissipation* P 1.5 W totp Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 2.5 200 Collector-Base Breakdown V -75 V I =-100A (BR)CBO C D=1 (D.C.) Voltage 2.0 t1 D=t1/tP Collector-Emitter Breakdown V -70 V I =-10mA* (BR)CEO C Voltage tP 1.5 100 D=0.5 Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E Voltage 1.0 D=0.2 Collector Cut-Off Current I -0.1 A V =-40V CBO CB 0.5 D=0.1 Emitter Cut-Off Current I -0.1 V =-4V A Single Pulse EBO EB 0 0 Collector-Emitter Saturation V -0.45 V I =-500mA, I =-5mA* CE(sat) C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Voltage -0.5 V I =-1A, I =-25mA* C B T -Temperature (C) Pulse Width (seconds) -0.5 V I =-2A, I =-200mA* C B Base-Emitter V -0.95 V I =-1A, I =-25mA* Derating curve Maximum transient thermal impedance BE(sat) C B Saturation Voltage Base-Emitter V -0.75 V IC=-1A, V =-2V* BE(on) CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-2V* FE C CE Transfer 250 I =-500mA, V =-2V* C CE 200 I =-1A, V =-2V* C CE 3-283 3-282 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX792A ZTX792A HIGH GAIN TRANSISTOR ISSUE 2 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 70 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 400 at I =3 Amps C * Very low saturation voltage Transition Frequency f 100 MHz I =-50mA, V =-5V T C CE f=50MHz APPLICATIONS * Darlington replacement C Input Capacitance C 225 pF V =-0.5V, f=1MHz ibo EB B E * Flash gun convertors Output Capacitance C 22 pF V =-10V, f=1MHz obo CB * Battery powered circuits E-Line * Motor drivers Switching Times t 35 ns I =-500mA, I =-50mA on C B1 TO92 Compatible t 750 ns I =-50mA, V =-10V off B2 CC *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT THERMAL CHARACTERISTICS Collector-Base Voltage V -75 V CBO PARAMETER SYMBOL MAX. UNIT Collector-Emitter Voltage V -70 V CEO Thermal Resistance: Junction to Ambient R 175 C/W Emitter-Base Voltage V -5 V 1 th(j-amb)1 EBO Junction to Ambient R 116 C/W 2 th(j-amb)2 Peak Pulse Current I -4 A CM Junction to Case R 70 C/W th(j-case) Continuous Collector Current I -2 A C Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Practical Power Dissipation* P 1.5 W totp Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. 2.5 200 Collector-Base Breakdown V -75 V I =-100A (BR)CBO C D=1 (D.C.) Voltage 2.0 t1 D=t1/tP Collector-Emitter Breakdown V -70 V I =-10mA* (BR)CEO C Voltage tP 1.5 100 D=0.5 Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E Voltage 1.0 D=0.2 Collector Cut-Off Current I -0.1 A V =-40V CBO CB 0.5 D=0.1 Emitter Cut-Off Current I -0.1 V =-4V A Single Pulse EBO EB 0 0 Collector-Emitter Saturation V -0.45 V I =-500mA, I =-5mA* CE(sat) C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Voltage -0.5 V I =-1A, I =-25mA* C B T -Temperature (C) Pulse Width (seconds) -0.5 V I =-2A, I =-200mA* C B Base-Emitter V -0.95 V I =-1A, I =-25mA* Derating curve Maximum transient thermal impedance BE(sat) C B Saturation Voltage Base-Emitter V -0.75 V IC=-1A, V =-2V* BE(on) CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-2V* FE C CE Transfer 250 I =-500mA, V =-2V* C CE 200 I =-1A, V =-2V* C CE 3-283 3-282 Thermal Resistance (C/W)