Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX795A ZTX795A HIGH GAIN TRANSISTOR ISSUE 1 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 140 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 250 at I =0.2 Amps C * Very low saturation voltage Transition Frequency f 100 MHz I =-50mA, V =-5V T C CE f=50MHz C Input Capacitance C 225 pF V =-0.5V, f=1MHz ibo EB B E Output Capacitance C 15 pF V =-10V, f=1MHz obo CB E-Line Switching Times t 100 ns I =-100mA, I =-10mA on C B1 TO92 Compatible t 1900 ns I =-10mA, V =-50V off B2 CC ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -140 V THERMAL CHARACTERISTICS CBO Collector-Emitter Voltage V -140 V CEO PARAMETER SYMBOL MAX. UNIT Emitter-Base Voltage V -5 V EBO Thermal Resistance Junction to Ambient R 175 C/W 1 th(j-amb)1 Peak Pulse Current I -1 A CM Junction to Ambient R 116 C/W 2 th(j-amb)2 Continuous Collector Current I -0.5 A Junction to Case R 70 C/W C th(j-case) Practical Power Dissipation* P 1.5 W totp Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T T -55 to +200 C j: stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -140 V I =-100A (BR)CBO C 2.5 200 Voltage D=1 (D.C.) 2.0 t1 Collector-Emitter Breakdown V -140 V I =-10mA* D=t1/tP (BR)CEO C Voltage tP 1.5 Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E 100 D=0.5 Voltage 1.0 Collector Cut-Off Current I -0.1 A V =-100V CBO CB D=0.2 0.5 Emitter Cut-Off Current I -0.1 A V =-4V D=0.1 EBO EB Single Pulse Collector-Emitter Saturation V -0.3 V I =-100mA, I =-1mA* 0 0 CE(sat) C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Voltage -0.3 V I =-200mA, I =-5mA* C B T -Temperature (C) Pulse Width (seconds) -0.25 V I =-500mA, I =-50mA* C B Base-Emitter V -0.95 V I =-500mA, I =-50mA* BE(sat) C B Derating curve Maximum transient thermal impedance Saturation Voltage Base-Emitter V -0.75 V IC=-500mA, V =-2V* BE(on) CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-2V* FE C CE Transfer Ratio 250 I =-200mA, V =-2V* C CE 100 I =-300mA, V =-2V* C CE 3-286 3-285 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX795A ZTX795A HIGH GAIN TRANSISTOR ISSUE 1 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 140 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Gain of 250 at I =0.2 Amps C * Very low saturation voltage Transition Frequency f 100 MHz I =-50mA, V =-5V T C CE f=50MHz C Input Capacitance C 225 pF V =-0.5V, f=1MHz ibo EB B E Output Capacitance C 15 pF V =-10V, f=1MHz obo CB E-Line Switching Times t 100 ns I =-100mA, I =-10mA on C B1 TO92 Compatible t 1900 ns I =-10mA, V =-50V off B2 CC ABSOLUTE MAXIMUM RATINGS. *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V -140 V THERMAL CHARACTERISTICS CBO Collector-Emitter Voltage V -140 V CEO PARAMETER SYMBOL MAX. UNIT Emitter-Base Voltage V -5 V EBO Thermal Resistance Junction to Ambient R 175 C/W 1 th(j-amb)1 Peak Pulse Current I -1 A CM Junction to Ambient R 116 C/W 2 th(j-amb)2 Continuous Collector Current I -0.5 A Junction to Case R 70 C/W C th(j-case) Practical Power Dissipation* P 1.5 W totp Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. Power Dissipation at T =25C P 1 W amb tot derate above 25C 5.7 mW/C Operating and Storage Temperature Range T T -55 to +200 C j: stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -140 V I =-100A (BR)CBO C 2.5 200 Voltage D=1 (D.C.) 2.0 t1 Collector-Emitter Breakdown V -140 V I =-10mA* D=t1/tP (BR)CEO C Voltage tP 1.5 Emitter-Base Breakdown V -5 V I =-100A (BR)EBO E 100 D=0.5 Voltage 1.0 Collector Cut-Off Current I -0.1 A V =-100V CBO CB D=0.2 0.5 Emitter Cut-Off Current I -0.1 A V =-4V D=0.1 EBO EB Single Pulse Collector-Emitter Saturation V -0.3 V I =-100mA, I =-1mA* 0 0 CE(sat) C B -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Voltage -0.3 V I =-200mA, I =-5mA* C B T -Temperature (C) Pulse Width (seconds) -0.25 V I =-500mA, I =-50mA* C B Base-Emitter V -0.95 V I =-500mA, I =-50mA* BE(sat) C B Derating curve Maximum transient thermal impedance Saturation Voltage Base-Emitter V -0.75 V IC=-500mA, V =-2V* BE(on) CE Turn-On Voltage Static Forward Current h 300 800 I =-10mA, V =-2V* FE C CE Transfer Ratio 250 I =-200mA, V =-2V* C CE 100 I =-300mA, V =-2V* C CE 3-286 3-285 Thermal Resistance (C/W)