Max Power Dissipation - (Watts)
Case temperature
Ambient temperature
PNP SILICON PLANAR MEDIUM POWER
ZTX795A
ZTX795A
HIGH GAIN TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
ELECTRICAL CHARACTERISTICS (at T = 25C)
amb
* 140 Volt V
CEO
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
* Gain of 250 at I =0.2 Amps
C
* Very low saturation voltage
Transition Frequency f 100 MHz I =-50mA, V =-5V
T C CE
f=50MHz
C
Input Capacitance C 225 pF V =-0.5V, f=1MHz
ibo EB
B
E
Output Capacitance C 15 pF V =-10V, f=1MHz
obo CB
E-Line
Switching Times t 100 ns I =-100mA, I =-10mA
on C B1 TO92 Compatible
t 1900 ns I =-10mA, V =-50V
off B2 CC
ABSOLUTE MAXIMUM RATINGS.
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V -140 V
THERMAL CHARACTERISTICS CBO
Collector-Emitter Voltage V -140 V
CEO
PARAMETER SYMBOL MAX. UNIT
Emitter-Base Voltage V -5 V
EBO
Thermal Resistance Junction to Ambient R 175 C/W
1 th(j-amb)1 Peak Pulse Current I -1 A
CM
Junction to Ambient R 116 C/W
2 th(j-amb)2
Continuous Collector Current I -0.5 A
Junction to Case R
70 C/W C
th(j-case)
Practical Power Dissipation* P 1.5 W
totp
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Power Dissipation at T =25C P 1 W
amb tot
derate above 25C 5.7 mW/C
Operating and Storage Temperature Range T T -55 to +200 C
j: stg
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T = 25C)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V -140 V
I =-100A
(BR)CBO C
2.5
200
Voltage
D=1 (D.C.)
2.0 t1 Collector-Emitter Breakdown V -140 V I =-10mA*
D=t1/tP
(BR)CEO C
Voltage
tP
1.5
Emitter-Base Breakdown V -5 V I =-100A
(BR)EBO E
100 D=0.5
Voltage
1.0
Collector Cut-Off Current I -0.1 A V =-100V
CBO CB
D=0.2
0.5
Emitter Cut-Off Current I -0.1 A V =-4V
D=0.1
EBO EB
Single Pulse
Collector-Emitter Saturation V -0.3 V I =-100mA, I =-1mA*
0
0 CE(sat) C B
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
Voltage -0.3 V I =-200mA, I =-5mA*
C B
T -Temperature (C) Pulse Width (seconds) -0.25 V I =-500mA, I =-50mA*
C B
Base-Emitter V -0.95 V I =-500mA, I =-50mA*
BE(sat) C B
Derating curve Maximum transient thermal impedance
Saturation Voltage
Base-Emitter V -0.75 V IC=-500mA, V =-2V*
BE(on) CE
Turn-On Voltage
Static Forward Current h 300 800 I =-10mA, V =-2V*
FE C CE
Transfer Ratio 250 I =-200mA, V =-2V*
C CE
100 I =-300mA, V =-2V*
C CE
3-286 3-285
Thermal Resistance (C/W)Max Power Dissipation - (Watts)
Case temperature
Ambient temperature
PNP SILICON PLANAR MEDIUM POWER
ZTX795A
ZTX795A
HIGH GAIN TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
ELECTRICAL CHARACTERISTICS (at T = 25C)
amb
* 140 Volt V
CEO
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
* Gain of 250 at I =0.2 Amps
C
* Very low saturation voltage
Transition Frequency f 100 MHz I =-50mA, V =-5V
T C CE
f=50MHz
C
Input Capacitance C 225 pF V =-0.5V, f=1MHz
ibo EB
B
E
Output Capacitance C 15 pF V =-10V, f=1MHz
obo CB
E-Line
Switching Times t 100 ns I =-100mA, I =-10mA
on C B1 TO92 Compatible
t 1900 ns I =-10mA, V =-50V
off B2 CC
ABSOLUTE MAXIMUM RATINGS.
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V -140 V
THERMAL CHARACTERISTICS CBO
Collector-Emitter Voltage V -140 V
CEO
PARAMETER SYMBOL MAX. UNIT
Emitter-Base Voltage V -5 V
EBO
Thermal Resistance Junction to Ambient R 175 C/W
1 th(j-amb)1 Peak Pulse Current I -1 A
CM
Junction to Ambient R 116 C/W
2 th(j-amb)2
Continuous Collector Current I -0.5 A
Junction to Case R
70 C/W C
th(j-case)
Practical Power Dissipation* P 1.5 W
totp
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Power Dissipation at T =25C P 1 W
amb tot
derate above 25C 5.7 mW/C
Operating and Storage Temperature Range T T -55 to +200 C
j: stg
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T = 25C)
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown V -140 V
I =-100A
(BR)CBO C
2.5
200
Voltage
D=1 (D.C.)
2.0 t1 Collector-Emitter Breakdown V -140 V I =-10mA*
D=t1/tP
(BR)CEO C
Voltage
tP
1.5
Emitter-Base Breakdown V -5 V I =-100A
(BR)EBO E
100 D=0.5
Voltage
1.0
Collector Cut-Off Current I -0.1 A V =-100V
CBO CB
D=0.2
0.5
Emitter Cut-Off Current I -0.1 A V =-4V
D=0.1
EBO EB
Single Pulse
Collector-Emitter Saturation V -0.3 V I =-100mA, I =-1mA*
0
0 CE(sat) C B
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
Voltage -0.3 V I =-200mA, I =-5mA*
C B
T -Temperature (C) Pulse Width (seconds) -0.25 V I =-500mA, I =-50mA*
C B
Base-Emitter V -0.95 V I =-500mA, I =-50mA*
BE(sat) C B
Derating curve Maximum transient thermal impedance
Saturation Voltage
Base-Emitter V -0.75 V IC=-500mA, V =-2V*
BE(on) CE
Turn-On Voltage
Static Forward Current h 300 800 I =-10mA, V =-2V*
FE C CE
Transfer Ratio 250 I =-200mA, V =-2V*
C CE
100 I =-300mA, V =-2V*
C CE
3-286 3-285
Thermal Resistance (C/W)