s) Max Power Dissipation - (Watt Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX849 ZTX849 HIGH CURRENT TRANSISTOR ISSUE 2 MARCH 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 5 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 20 Amps peak current Base-Emitter V 850 950 mV IC=5A, V =1V* BE(on) CE * Very low saturation voltages Turn-On Voltage APPLICATIONS Static Forward h 100 200 I =10mA, V =1V FE C CE * LCD backlight converter C Current Transfer 100 200 300 I =1A, V =1V* C CE B E * Flash gun converters Ratio 100 170 I =5A, V =1V* C CE 30 65 I =20A, V =1V* C CE * Battery powered circuits E-Line Transition Frequency f 100 MHz I =100mA, V =10V * Motor drivers T C CE TO92 Compatible f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 75 pF V =10V, f=1MHz* obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 45 ns I =1A, I =100mA on C B Collector-Base Voltage V 80 V CBO t 630 ns I =100mA, V =10V off B2 CC Collector-Emitter Voltage V 30 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V 6V EBO Peak Pulse Current I 20 A CM THERMAL CHARACTERISTICS Continuous Collector Current I 5A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W Power Dissipation at T =25C P 1.2 W amb tot th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 80 120 V I =100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V 80 120 V IC=1A, RB 1K (BR)CER t1 Voltag D=t1/tP 3.0 Collector-Emitter Breakdown V 30 40 V I =10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I 50 nA V =70V D=0.1 CBO CB D=0.05 1 A V =70V, T =100C CB amb Single Pulse 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I 50 nA V =70V CER CB R 1K 1 A V =70V, T =100C T -Temperature (C) Pulse Width (seconds) CB amb Emitter Cut-Off Current I 10 nA V =6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V 25 50 mV I =0.5A, I =20mA* CE(sat) C B Voltage 50 100 mV I =1A, I =20mA* C B 110 200 mV I =2A, I =20mA* C B 180 220 mV I =5A, I =200mA* C B Base-Emitter V 930 1050 mV I =5A, I =200mA* BE(sat) C B Saturation Voltage 3-292 3-291 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX849 ZTX849 HIGH CURRENT TRANSISTOR ISSUE 2 MARCH 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 5 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 20 Amps peak current Base-Emitter V 850 950 mV IC=5A, V =1V* BE(on) CE * Very low saturation voltages Turn-On Voltage APPLICATIONS Static Forward h 100 200 I =10mA, V =1V FE C CE * LCD backlight converter C Current Transfer 100 200 300 I =1A, V =1V* C CE B E * Flash gun converters Ratio 100 170 I =5A, V =1V* C CE 30 65 I =20A, V =1V* C CE * Battery powered circuits E-Line Transition Frequency f 100 MHz I =100mA, V =10V * Motor drivers T C CE TO92 Compatible f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 75 pF V =10V, f=1MHz* obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 45 ns I =1A, I =100mA on C B Collector-Base Voltage V 80 V CBO t 630 ns I =100mA, V =10V off B2 CC Collector-Emitter Voltage V 30 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V 6V EBO Peak Pulse Current I 20 A CM THERMAL CHARACTERISTICS Continuous Collector Current I 5A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W Power Dissipation at T =25C P 1.2 W amb tot th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 80 120 V I =100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V 80 120 V IC=1A, RB 1K (BR)CER t1 Voltag D=t1/tP 3.0 Collector-Emitter Breakdown V 30 40 V I =10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I 50 nA V =70V D=0.1 CBO CB D=0.05 1 A V =70V, T =100C CB amb Single Pulse 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I 50 nA V =70V CER CB R 1K 1 A V =70V, T =100C T -Temperature (C) Pulse Width (seconds) CB amb Emitter Cut-Off Current I 10 nA V =6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V 25 50 mV I =0.5A, I =20mA* CE(sat) C B Voltage 50 100 mV I =1A, I =20mA* C B 110 200 mV I =2A, I =20mA* C B 180 220 mV I =5A, I =200mA* C B Base-Emitter V 930 1050 mV I =5A, I =200mA* BE(sat) C B Saturation Voltage 3-292 3-291 Thermal Resistance (C/W)