s) Max Power Dissipation - (Watt Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX853 ZTX853 HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 100 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 4 Amps continuous current Base-Emitter V 830 950 V IC=4A, V =2V* BE(on) CE * Up to 10 Amps peak current Turn-On Voltage * Very low saturation voltage Static Forward h 100 200 I =10mA, V =2V FE C CE *P =1.2 Watts C tot Current Transfer 100 200 300 I =2A, V =2V* C CE B E Ratio 50 100 I =4A, V =2V* C CE 20 30 I =10A, V =2V* C CE E-Line Transition Frequency f 130 MHz I =100mA, V =10V T C CE TO92 Compatible f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 35 pF V =10V, f=1MHz obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 50 ns I =1A, I =100mA on C B Collector-Base Voltage V 200 V CBO t 1650 ns I =100mA, V =10V off B2 CC Collector-Emitter Voltage V 100 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V 6V EBO Peak Pulse Current I 10 A CM THERMAL CHARACTERISTICS Continuous Collector Current I 4A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W Power Dissipation at T =25C P 1.2 W amb tot th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :Tstg -55 to +200 C j *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 200 300 V I =100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V 200 300 V IC=1A, RB 1K (BR)CER t1 D=t1/tP Voltag 3.0 Collector-Emitter Breakdown V 100 120 V I =10mA* 100 t (BR)CEO C P Voltage D=0.6 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E 50 Voltage D=0.2 1.0 D=0.1 Collector Cut-Off Current I 50 nA V =150V CBO CB D=0.05 Single Pulse 1 A V =150V, T =100C CB amb 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I 50 nA V =150V CER CB T -Temperature (C) Pulse Width (seconds) R 1K 1 A V =150V, T =100C CB amb Derating curve Maximum transient thermal impedance Emitter Cut-Off Current I 10 nA V =6V EBO EB Collector-Emitter Saturation V 14 50 mV I =0.1A, I =5mA CE(sat) C B Voltage 100 150 mV I =2A, I =100mA C B 160 200 mV I =4A, I =400mA* C B Base-Emitter V 960 1100 mV I =4A, I =400mA* BE(sat) C B Saturation Voltage 3-298 3-297 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX853 ZTX853 HIGH CURRENT TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 100 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 4 Amps continuous current Base-Emitter V 830 950 V IC=4A, V =2V* BE(on) CE * Up to 10 Amps peak current Turn-On Voltage * Very low saturation voltage Static Forward h 100 200 I =10mA, V =2V FE C CE *P =1.2 Watts C tot Current Transfer 100 200 300 I =2A, V =2V* C CE B E Ratio 50 100 I =4A, V =2V* C CE 20 30 I =10A, V =2V* C CE E-Line Transition Frequency f 130 MHz I =100mA, V =10V T C CE TO92 Compatible f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 35 pF V =10V, f=1MHz obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 50 ns I =1A, I =100mA on C B Collector-Base Voltage V 200 V CBO t 1650 ns I =100mA, V =10V off B2 CC Collector-Emitter Voltage V 100 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V 6V EBO Peak Pulse Current I 10 A CM THERMAL CHARACTERISTICS Continuous Collector Current I 4A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W Power Dissipation at T =25C P 1.2 W amb tot th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :Tstg -55 to +200 C j *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 200 300 V I =100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V 200 300 V IC=1A, RB 1K (BR)CER t1 D=t1/tP Voltag 3.0 Collector-Emitter Breakdown V 100 120 V I =10mA* 100 t (BR)CEO C P Voltage D=0.6 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E 50 Voltage D=0.2 1.0 D=0.1 Collector Cut-Off Current I 50 nA V =150V CBO CB D=0.05 Single Pulse 1 A V =150V, T =100C CB amb 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I 50 nA V =150V CER CB T -Temperature (C) Pulse Width (seconds) R 1K 1 A V =150V, T =100C CB amb Derating curve Maximum transient thermal impedance Emitter Cut-Off Current I 10 nA V =6V EBO EB Collector-Emitter Saturation V 14 50 mV I =0.1A, I =5mA CE(sat) C B Voltage 100 150 mV I =2A, I =100mA C B 160 200 mV I =4A, I =400mA* C B Base-Emitter V 960 1100 mV I =4A, I =400mA* BE(sat) C B Saturation Voltage 3-298 3-297 Thermal Resistance (C/W)