X-On Electronics has gained recognition as a prominent supplier of ZTX855 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. ZTX855 Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

ZTX855 Diodes Incorporated

ZTX855 electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZTX855
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 150 V 4 A 90MHz 1.2 W Through Hole E-Line (TO-92 compatible)
Datasheet: ZTX855 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.386 ea
Line Total: USD 1.39 
Availability - 6312
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6312
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 1.386
10 : USD 0.9295
100 : USD 0.6611
500 : USD 0.5324
1000 : USD 0.4906
4000 : USD 0.4873

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZTX855 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZTX855 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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A Product Line of Diodes Incorporated ZTX855 150V NPN MEDIUM POWER TRANSISTOR IN E-LINE Features Mechanical Data Case: E-Line (TO-92 Compatible) BV > 150V CEO I = 4A High Continuous Collector Current Case Material: molded plastic, Green Molding Compound C I = 10A Peak Pulse Current UL Flammability Classification Rating 94V-0 CM T up to 200C for High Temperature Operation Terminals: Finish Matte Tin Plated Leads, Solderable per J Low Saturation Voltage < 100mV 1A MIL-STD-202, Method 208 P = 1.2W Power dissipation D Weight: 0.159 grams (approximate) Complementary NPN Type: ZTX955 Lead-Free Finish RoHS compliant (Note 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Part Mark on Rounded Face E-Line (TO-92 Compatible) C C B Ejection Mark E on Flat Face Bottom View B E C C B E B E Rounded Face View Flat Face View Device Symbol Pin-Out Configuration Ordering Information (Note 4) Product Marking Package Leads Quantity ZTX855STZ ZTX855 E-Line Joggled 2,000 taped per Ammo Box ZTX855 ZTX855 E-Line Straight 4,000 loose in a Box Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See A Product Line of Diodes Incorporated ZTX855 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage 250 V V CBO Collector-Emitter Voltage 150 V V CEO Emitter-Base Voltage 6 V V EBO Continuous Collector Current 4 A I C Peak Pulse Current I 10 A CM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 1.58 W P D Power Dissipation (Note 6) 1.2 W P D Thermal Resistance, Junction to Ambient (Note 5) 150 R C/W JA Thermal Resistance, Junction to Ambient (Note 6) R 110 C/W JA Thermal Resistance, Junction to Lead (Note 7) R 50 C/W JC Operating and Storage Temperature Range T T -55 to +200 C J, STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a through-hole device mounted at the seating plane (2.5mm lead length) with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided FR4 PCB device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except the device is mounted on minimum recommended pad layout with 12mm lead length from the bottom of package to the board. 7. Thermal resistance from junction to solder-point at the seating plane (2.5mm from the bottom of package along the collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 May 2013 ZTX855 Diodes Incorporated www.diodes.com Document Number DS33136 Rev. 4 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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