s) Max Power Dissipation - (Watt Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX857 ZTX857 HIGH CURRENT TRANSISTOR ISSUE 1 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 300 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 3 Amps continuous current Base-Emitter V 810 950 mV IC=2A, V =5V* BE(on) CE * Up to 5 Amps peak current Turn-On Voltage * Very low saturation voltage Static Forward h 100 200 I =10mA, V =5V FE C CE *P = 1.2 Watt C tot Current Transfer 100 200 300 I =500mA, V =10V* C CE B E Ratio 15 25 I =2A, V =10V* C CE 15 I =3A, V =10V* C CE E-Line Transition Frequency f 80 MHz I =100mA, V =10V T C CE TO92 Compatible f=100MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 11 pF V =20V, f=1MHz obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 100 ns I =250mA, I =25mA on C B1 Collector-Base Voltage V 330 V CBO t 5300 ns I =25mA, V =50V off B2 CC Collector-Emitter Voltage V 300 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V 6V EBO Peak Pulse Current I 5A CM THERMAL CHARACTERISTICS Continuous Collector Current I 3A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W Power Dissipation at T =25C P 1.2 W amb tot th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 330 475 V I =100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V 330 475 V IC=1A, RB 1K (BR)CER t1 Voltag D=t1/tP 3.0 Collector-Emitter Breakdown V 300 350 V I =10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I 50 nA V =300V CBO CB D=0.1 D=0.05 1 A V =300V, T =100C CB amb Single Pulse 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I 50 nA V =300V CER CB R 1K 1 A V =300V, T =100C T -Temperature (C) Pulse Width (seconds) CB amb Emitter Cut-Off Current I 10 nA V =6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V 50 100 mV I =0.5A, I =50mA* CE(sat) C B Voltage 80 140 mV I =1A, I =100mA* C B 140 200 mV I =2A, I =200mA* C B 170 250 mV I =3A, I =600mA* C B Base-Emitter V 870 1000 mV I =2A, I =200mA* BE(sat) C B Saturation Voltage 3-304 3-303 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX857 ZTX857 HIGH CURRENT TRANSISTOR ISSUE 1 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 300 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 3 Amps continuous current Base-Emitter V 810 950 mV IC=2A, V =5V* BE(on) CE * Up to 5 Amps peak current Turn-On Voltage * Very low saturation voltage Static Forward h 100 200 I =10mA, V =5V FE C CE *P = 1.2 Watt C tot Current Transfer 100 200 300 I =500mA, V =10V* C CE B E Ratio 15 25 I =2A, V =10V* C CE 15 I =3A, V =10V* C CE E-Line Transition Frequency f 80 MHz I =100mA, V =10V T C CE TO92 Compatible f=100MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 11 pF V =20V, f=1MHz obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 100 ns I =250mA, I =25mA on C B1 Collector-Base Voltage V 330 V CBO t 5300 ns I =25mA, V =50V off B2 CC Collector-Emitter Voltage V 300 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V 6V EBO Peak Pulse Current I 5A CM THERMAL CHARACTERISTICS Continuous Collector Current I 3A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W Power Dissipation at T =25C P 1.2 W amb tot th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 330 475 V I =100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V 330 475 V IC=1A, RB 1K (BR)CER t1 Voltag D=t1/tP 3.0 Collector-Emitter Breakdown V 300 350 V I =10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I 50 nA V =300V CBO CB D=0.1 D=0.05 1 A V =300V, T =100C CB amb Single Pulse 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I 50 nA V =300V CER CB R 1K 1 A V =300V, T =100C T -Temperature (C) Pulse Width (seconds) CB amb Emitter Cut-Off Current I 10 nA V =6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V 50 100 mV I =0.5A, I =50mA* CE(sat) C B Voltage 80 140 mV I =1A, I =100mA* C B 140 200 mV I =2A, I =200mA* C B 170 250 mV I =3A, I =600mA* C B Base-Emitter V 870 1000 mV I =2A, I =200mA* BE(sat) C B Saturation Voltage 3-304 3-303 Thermal Resistance (C/W)