Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX869 ZTX869 HIGH CURRENT TRANSISTOR ISSUE 1 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 25 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 5 Amps continuous current Base-Emitter V 800 900 mV IC=5A, V =1V* * Up to 20 Amps peak current BE(on) CE Turn-On Voltage * Very low saturation voltage Static Forward h 300 450 I =10mA, V =1V *High Gain C FE C CE B Current Transfer 300 450 I =1A, V =1V* C CE E *P =1.2 Watts tot Ratio 250 400 I =5A, V =1V* C CE 40 100 I =20A, V =1V* C CE E-Line TO92 Compatible Transition Frequency f 100 MHz I =100mA, V =10V T C CE ABSOLUTE MAXIMUM RATINGS. f=50MHz PARAMETER SYMBOL VALUE UNIT Output Capacitance C 70 pF V =10V, f=1MHz obo CB Collector-Base Voltage V 60 V CBO Switching Times t 60 ns I =1A, I =100mA on C B1 t 680 ns I =100mA, V =10V Collector-Emitter Voltage V 25 V off B2 CC CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V 6V EBO Peak Pulse Current I 20 A CM Continuous Collector Current I 5A C THERMAL CHARACTERISTICS Practical Power Dissipation* P 1.58 W totp PARAMETER SYMBOL MAX. UNIT Power Dissipation at T =25C P 1.2 W amb tot Thermal Resistance: Junction to Ambient R 150 C/W th(j-amb) Operating and Storage Temperature Range T :T -55 to +200 C j stg Junction to Case R 50 C/W th(j-case) *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 60 120 V I =100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V 60 120 V IC=1A, RB 1K (BR)CER t1 Voltag D=t1/tP 3.0 Collector-Emitter Breakdown V 25 35 V I =10mA* (BR)CEO C 100 tP Voltage D=0.6 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I 50 nA V =50V CBO CB D=0.1 1 A V =50V, T =100C D=0.05 CB amb Single Pulse 0 Collector Cut-Off Current I 50 nA V =50V -40 -20 0 20 0.0001 0.001 0.01 0.1 1 10 100 40 60 80 100 120 140 160 180 200 CER CB R 1K 1 A V =50V, T =100C CB amb T -Temperature (C) Pulse Width (seconds) Emitter Cut-Off Current I 10 nA V =6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V 25 50 mV I =0.5A, I =10mA* CE(sat) C B Voltage 50 80 mV I =1A, I =10mA* C B 100 200 mV I =2A, I =100mA* C B 180 220 mV I =5A, I =100mA* C B Base-Emitter V 880 950 mV I =5A, I =100mA* BE(sat) C B Saturation Voltage 3-307 3-306 Thermal Resistance (C/W)Max Power Dissipation - (Watts) Case temperature Ambient temperature NPN SILICON PLANAR MEDIUM POWER ZTX869 ZTX869 HIGH CURRENT TRANSISTOR ISSUE 1 APRIL 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 25 Volt V CEO PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 5 Amps continuous current Base-Emitter V 800 900 mV IC=5A, V =1V* * Up to 20 Amps peak current BE(on) CE Turn-On Voltage * Very low saturation voltage Static Forward h 300 450 I =10mA, V =1V *High Gain C FE C CE B Current Transfer 300 450 I =1A, V =1V* C CE E *P =1.2 Watts tot Ratio 250 400 I =5A, V =1V* C CE 40 100 I =20A, V =1V* C CE E-Line TO92 Compatible Transition Frequency f 100 MHz I =100mA, V =10V T C CE ABSOLUTE MAXIMUM RATINGS. f=50MHz PARAMETER SYMBOL VALUE UNIT Output Capacitance C 70 pF V =10V, f=1MHz obo CB Collector-Base Voltage V 60 V CBO Switching Times t 60 ns I =1A, I =100mA on C B1 t 680 ns I =100mA, V =10V Collector-Emitter Voltage V 25 V off B2 CC CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V 6V EBO Peak Pulse Current I 20 A CM Continuous Collector Current I 5A C THERMAL CHARACTERISTICS Practical Power Dissipation* P 1.58 W totp PARAMETER SYMBOL MAX. UNIT Power Dissipation at T =25C P 1.2 W amb tot Thermal Resistance: Junction to Ambient R 150 C/W th(j-amb) Operating and Storage Temperature Range T :T -55 to +200 C j stg Junction to Case R 50 C/W th(j-case) *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V 60 120 V I =100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V 60 120 V IC=1A, RB 1K (BR)CER t1 Voltag D=t1/tP 3.0 Collector-Emitter Breakdown V 25 35 V I =10mA* (BR)CEO C 100 tP Voltage D=0.6 2.0 Emitter-Base Breakdown V 68 V I =100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I 50 nA V =50V CBO CB D=0.1 1 A V =50V, T =100C D=0.05 CB amb Single Pulse 0 Collector Cut-Off Current I 50 nA V =50V -40 -20 0 20 0.0001 0.001 0.01 0.1 1 10 100 40 60 80 100 120 140 160 180 200 CER CB R 1K 1 A V =50V, T =100C CB amb T -Temperature (C) Pulse Width (seconds) Emitter Cut-Off Current I 10 nA V =6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V 25 50 mV I =0.5A, I =10mA* CE(sat) C B Voltage 50 80 mV I =1A, I =10mA* C B 100 200 mV I =2A, I =100mA* C B 180 220 mV I =5A, I =100mA* C B Base-Emitter V 880 950 mV I =5A, I =100mA* BE(sat) C B Saturation Voltage 3-307 3-306 Thermal Resistance (C/W)