s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX949 ZTX949 HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 4.5 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 20 Amps peak current Base-Emitter V -860 -1000 mV IC=-5A, V =-1V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain up to 20 Amps Static Forward h 100 200 I =-10mA, V =-1V FE C CE * Very low leakage C Current Transfer Ratio 100 200 300 I =-1A, V =-1V* C CE B E * Exceptional gain linearity down to 10mA 75 140 I =-5A, V =-1V* C CE 35 I =-20A, V =-1V* C CE * Spice model available E-Line Transition Frequency f 100 MHz I =-100mA, V =-10V T C CE TO92 Compatible f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 122 pF V =-10V, f=1MHz obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 120 ns I =-4A, I =-400mA on C B1 Collector-Base Voltage V -50 V CBO t 130 ns I =400mA, V =-10V off B2 CC Collector-Emitter Voltage V -30 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -20 A CM THERMAL CHARACTERISTICS Continuous Collector Current I -4.5 A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W Power Dissipation at T =25C P 1.2 W amb tot th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :Tstg -55 to +200 C j *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -50 -80 V I =-100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V -50 -80 V IC=-1A, RB 1K (BR)CER t1 Voltag D=t1/tP 3.0 Collector-Emitter Breakdown V -30 -45 V I =-10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V -6 -8 V I =-100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I -50 nA V =-40V D=0.1 CBO CB D=0.05 -1 A V =-40V, T =100C CB amb Single Pulse 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I -50 nA V =-40V CER CB R 1K -1 A V =-40V, T =100C T -Temperature (C) Pulse Width (seconds) CB amb Emitter Cut-Off Current I -10 nA V =-6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V -40 -60 mV I =-0.5A, I =-20mA* CE(sat) C B Voltage -80 -100 mV I =-1A, I =-20mA* C B -100 -160 mV I =-2A, I =-200mA* C B -240 -320 mV I =-5A, I =-300mA* C B Base-Emitter V -960 -1100 mV I =-5A, I =-300mA* BE(sat) C B Saturation Voltage 3-313 3-312 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX949 ZTX949 HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 4.5 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 20 Amps peak current Base-Emitter V -860 -1000 mV IC=-5A, V =-1V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain up to 20 Amps Static Forward h 100 200 I =-10mA, V =-1V FE C CE * Very low leakage C Current Transfer Ratio 100 200 300 I =-1A, V =-1V* C CE B E * Exceptional gain linearity down to 10mA 75 140 I =-5A, V =-1V* C CE 35 I =-20A, V =-1V* C CE * Spice model available E-Line Transition Frequency f 100 MHz I =-100mA, V =-10V T C CE TO92 Compatible f=50MHz ABSOLUTE MAXIMUM RATINGS. Output Capacitance C 122 pF V =-10V, f=1MHz obo CB PARAMETER SYMBOL VALUE UNIT Switching Times t 120 ns I =-4A, I =-400mA on C B1 Collector-Base Voltage V -50 V CBO t 130 ns I =400mA, V =-10V off B2 CC Collector-Emitter Voltage V -30 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -20 A CM THERMAL CHARACTERISTICS Continuous Collector Current I -4.5 A C PARAMETER SYMBOL MAX. UNIT Practical Power Dissipation* P 1.58 W totp Thermal Resistance: Junction to Ambient R 150 C/W Power Dissipation at T =25C P 1.2 W amb tot th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :Tstg -55 to +200 C j *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -50 -80 V I =-100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V -50 -80 V IC=-1A, RB 1K (BR)CER t1 Voltag D=t1/tP 3.0 Collector-Emitter Breakdown V -30 -45 V I =-10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V -6 -8 V I =-100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I -50 nA V =-40V D=0.1 CBO CB D=0.05 -1 A V =-40V, T =100C CB amb Single Pulse 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I -50 nA V =-40V CER CB R 1K -1 A V =-40V, T =100C T -Temperature (C) Pulse Width (seconds) CB amb Emitter Cut-Off Current I -10 nA V =-6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V -40 -60 mV I =-0.5A, I =-20mA* CE(sat) C B Voltage -80 -100 mV I =-1A, I =-20mA* C B -100 -160 mV I =-2A, I =-200mA* C B -240 -320 mV I =-5A, I =-300mA* C B Base-Emitter V -960 -1100 mV I =-5A, I =-300mA* BE(sat) C B Saturation Voltage 3-313 3-312 Thermal Resistance (C/W)