s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX951 ZTX951 HIGH CURRENT TRANSISTOR ISSUE 4 JUNE 94 ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 4 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 15 Amps peak current Base-Emitter V -850 -1000 mV IC=-4A, V =-1V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain up to 10 Amps Static Forward h 100 200 I =-10mA, V =-1V* FE C CE * Spice model available C Current Transfer Ratio 100 200 300 I =-1A, V =-1V* C CE B E 75 120 I =-4A, V =-1V* C CE 10 25 I =-10A, V =-1V* C CE E-Line TO92 Compatible Transition Frequency f 120 MHz I =-100mA, V =-10V T C CE ABSOLUTE MAXIMUM RATINGS. f=50MHz PARAMETER SYMBOL VALUE UNIT Output Capacitance C 74 pF V =-10V, f=1MHz obo CB Collector-Base Voltage V -100 V CBO Switching Times t 82 ns I =-2A, I =-200mA on C B1 t 350 ns I =200mA, V =-10V off B2 CC Collector-Emitter Voltage V -60 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -15 A CM THERMAL CHARACTERISTICS Continuous Collector Current I -4 A C Practical Power Dissipation* P 1.58 W PARAMETER SYMBOL MAX. UNIT totp Power Dissipation at T =25C P 1.2 W amb tot Thermal Resistance: Junction to Ambient R 150 C/W th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -100 -140 V I =-100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V -100 -140 V IC=-1A, RB 1K (BR)CER Voltag t1 D=t1/tP 3.0 Collector-Emitter Breakdown V -60 -90 V I =-10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V -6 -8 V I =-100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I -50 nA V =-80V CBO CB D=0.1 -1 A V =-80V, T =100C D=0.05 CB amb Single Pulse 0 Collector Cut-Off Current I -50 nA V =-80V -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 CER CB R 1K -1 A V =-80V, T =100C CB amb T -Temperature (C) Pulse Width (seconds) Emitter Cut-Off Current I -10 nA V =-6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V -15 -50 mV I =-100mA, I =-10mA* CE(sat) C B Voltage -60 -100 mV I =-1A, I =-100mA* C B -120 -160 mV I =-2A, I =-200mA* C B -220 -300 mV I =-4A, I =-400mA* C B Base-Emitter V -960 -1100 mV I =-4A, I =-400mA* BE(sat) C B Saturation Voltage 3-316 3-315 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX951 ZTX951 HIGH CURRENT TRANSISTOR ISSUE 4 JUNE 94 ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 4 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 15 Amps peak current Base-Emitter V -850 -1000 mV IC=-4A, V =-1V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain up to 10 Amps Static Forward h 100 200 I =-10mA, V =-1V* FE C CE * Spice model available C Current Transfer Ratio 100 200 300 I =-1A, V =-1V* C CE B E 75 120 I =-4A, V =-1V* C CE 10 25 I =-10A, V =-1V* C CE E-Line TO92 Compatible Transition Frequency f 120 MHz I =-100mA, V =-10V T C CE ABSOLUTE MAXIMUM RATINGS. f=50MHz PARAMETER SYMBOL VALUE UNIT Output Capacitance C 74 pF V =-10V, f=1MHz obo CB Collector-Base Voltage V -100 V CBO Switching Times t 82 ns I =-2A, I =-200mA on C B1 t 350 ns I =200mA, V =-10V off B2 CC Collector-Emitter Voltage V -60 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -15 A CM THERMAL CHARACTERISTICS Continuous Collector Current I -4 A C Practical Power Dissipation* P 1.58 W PARAMETER SYMBOL MAX. UNIT totp Power Dissipation at T =25C P 1.2 W amb tot Thermal Resistance: Junction to Ambient R 150 C/W th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -100 -140 V I =-100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V -100 -140 V IC=-1A, RB 1K (BR)CER Voltag t1 D=t1/tP 3.0 Collector-Emitter Breakdown V -60 -90 V I =-10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V -6 -8 V I =-100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I -50 nA V =-80V CBO CB D=0.1 -1 A V =-80V, T =100C D=0.05 CB amb Single Pulse 0 Collector Cut-Off Current I -50 nA V =-80V -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 CER CB R 1K -1 A V =-80V, T =100C CB amb T -Temperature (C) Pulse Width (seconds) Emitter Cut-Off Current I -10 nA V =-6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V -15 -50 mV I =-100mA, I =-10mA* CE(sat) C B Voltage -60 -100 mV I =-1A, I =-100mA* C B -120 -160 mV I =-2A, I =-200mA* C B -220 -300 mV I =-4A, I =-400mA* C B Base-Emitter V -960 -1100 mV I =-4A, I =-400mA* BE(sat) C B Saturation Voltage 3-316 3-315 Thermal Resistance (C/W)