s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX955 ZTX955 HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 3 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 10 Amps peak current Base-Emitter V -790 -900 mV IC=-3A, V =-5V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain characteristics up to 3 Amps Static Forward h 100 200 I =-10mA, V =-5V* FE C CE * Spice model available C Current Transfer Ratio 100 200 300 I =-1A, V =-5V* C CE B E 75 140 I =-3A, V =-5V* C CE 10 I =-10A, V =-5V* E-Line C CE TO92 Compatible Transition Frequency f 110 MHz I =-100mA, V =-10V T C CE ABSOLUTE MAXIMUM RATINGS. f=50MHz PARAMETER SYMBOL VALUE UNIT Output Capacitance C 40 pF V =-20V, f=1MHz obo CB Collector-Base Voltage V -180 V CBO Switching Times t 68 ns I =-1A, I =-100mA on C B1 t 1030 ns I =100mA, V =-50V off B2 CC Collector-Emitter Voltage V -140 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -10 A CM THERMAL CHARACTERISTICS Continuous Collector Current I -3 A C Practical Power Dissipation* P 1.58 W PARAMETER SYMBOL MAX. UNIT totp Power Dissipation at T =25C P 1.2 W amb tot Thermal Resistance: Junction to Ambient R 150 C/W th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -180 -210 V I =-100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V -180 -210 V IC=-1A, RB 1K (BR)CER Voltag t1 D=t1/tP 3.0 Collector-Emitter Breakdown V -140 -170 V I =-10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V -6 -8 V I =-100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I -50 nA V =-150V CBO CB D=0.1 -1 A V =-150V, T =100C D=0.05 CB amb Single Pulse 0 Collector Cut-Off Current I -50 nA V =-150V -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 CER CB R 1K -1 A V =-150V, T =100C CB amb T -Temperature (C) Pulse Width (seconds) Emitter Cut-Off Current I -10 nA V =-6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V -30 -60 mV I =-100mA, I =-5mA* CE(sat) C B Voltage -60 -100 mV I =-500mA, I =-50mA* C B -90 -120 mV I =-1A, I =-100mA* C B -250 -330 mV I =-3A, I =-300mA* C B Base-Emitter V -920 -1050 mV I =-3A, I =-300mA* BE(sat) C B Saturation Voltage 3-322 3-321 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX955 ZTX955 HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 3 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 10 Amps peak current Base-Emitter V -790 -900 mV IC=-3A, V =-5V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain characteristics up to 3 Amps Static Forward h 100 200 I =-10mA, V =-5V* FE C CE * Spice model available C Current Transfer Ratio 100 200 300 I =-1A, V =-5V* C CE B E 75 140 I =-3A, V =-5V* C CE 10 I =-10A, V =-5V* E-Line C CE TO92 Compatible Transition Frequency f 110 MHz I =-100mA, V =-10V T C CE ABSOLUTE MAXIMUM RATINGS. f=50MHz PARAMETER SYMBOL VALUE UNIT Output Capacitance C 40 pF V =-20V, f=1MHz obo CB Collector-Base Voltage V -180 V CBO Switching Times t 68 ns I =-1A, I =-100mA on C B1 t 1030 ns I =100mA, V =-50V off B2 CC Collector-Emitter Voltage V -140 V CEO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Emitter-Base Voltage V -6 V EBO Peak Pulse Current I -10 A CM THERMAL CHARACTERISTICS Continuous Collector Current I -3 A C Practical Power Dissipation* P 1.58 W PARAMETER SYMBOL MAX. UNIT totp Power Dissipation at T =25C P 1.2 W amb tot Thermal Resistance: Junction to Ambient R 150 C/W th(j-amb) Junction to Case R 50 C/W th(j-case) Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -180 -210 V I =-100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V -180 -210 V IC=-1A, RB 1K (BR)CER Voltag t1 D=t1/tP 3.0 Collector-Emitter Breakdown V -140 -170 V I =-10mA* (BR)CEO C 100 t P Voltage D=0.6 2.0 Emitter-Base Breakdown V -6 -8 V I =-100A (BR)EBO E Voltage 50 D=0.2 1.0 Collector Cut-Off Current I -50 nA V =-150V CBO CB D=0.1 -1 A V =-150V, T =100C D=0.05 CB amb Single Pulse 0 Collector Cut-Off Current I -50 nA V =-150V -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 CER CB R 1K -1 A V =-150V, T =100C CB amb T -Temperature (C) Pulse Width (seconds) Emitter Cut-Off Current I -10 nA V =-6V EBO EB Derating curve Maximum transient thermal impedance Collector-Emitter Saturation V -30 -60 mV I =-100mA, I =-5mA* CE(sat) C B Voltage -60 -100 mV I =-500mA, I =-50mA* C B -90 -120 mV I =-1A, I =-100mA* C B -250 -330 mV I =-3A, I =-300mA* C B Base-Emitter V -920 -1050 mV I =-3A, I =-300mA* BE(sat) C B Saturation Voltage 3-322 3-321 Thermal Resistance (C/W)