s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX958 ZTX958 HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 0.5 Amp continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 1.5 Amps peak current Base-Emitter V -690 -800 mV IC=-500mA, V =-10V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain characteristics up to 1 Amp Static Forward h 100 200 I =-10mA, V =-10V* FE C CE * Spice model available C Current Transfer Ratio 100 200 300 I =-500mA, V =-10V* C CE B E 10 20 I =-1A, V =-10V* C CE Transition Frequency f 85 MHz I =-100mA, V =-10V T C CE E-Line f=50MHz TO92 Compatible Output Capacitance C 19 pF V =-20V, f=1MHz ABSOLUTE MAXIMUM RATINGS. obo CB Switching Times t 104 ns I =-500mA, I =-50mA PARAMETER SYMBOL VALUE UNIT on C B1 t 2400 ns I =50mA, V =-100V off B2 CC Collector-Base Voltage V -400 V CBO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Collector-Emitter Voltage V -400 V CEO Emitter-Base Voltage V -6 V EBO THERMAL CHARACTERISTICS Peak Pulse Current I -1.5 A CM PARAMETER SYMBOL MAX. UNIT Continuous Collector Current I -0.5 A C Thermal Resistance: Junction to Ambient R 150 C/W Practical Power Dissipation* P 1.58 W th(j-amb) totp Junction to Case R 50 C/W th(j-case) Power Dissipation at T =25C P 1.2 W amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -400 -600 V I =-100A (BR)CBO C 4.0 D.C. Voltage 150 t1 D=t1/tP Collector-Emitter Breakdown V -400 -600 V IC=-1A, RB 1K (BR)CER 3.0 Voltag 100 t P Collector-Emitter Breakdown V -400 -550 V I =-10mA* (BR)CEO C D=0.6 2.0 Voltage Emitter-Base Breakdown V -6 -8 V I =-100A 50 (BR)EBO E D=0.2 Voltage 1.0 D=0.1 D=0.05 Collector Cut-Off Current I -50 nA V =-300V CBO CB Single Pulse 0 -1 A V =-300V, T =100C CB amb -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I -50 nA V =-300V T -Temperature (C) Pulse Width (seconds) CER CB R 1K -1 A V =-300V, T =100C CB amb Derating curve Maximum transient thermal impedance Emitter Cut-Off Current I -10 nA V =-6V EBO EB Collector-Emitter Saturation V -100 -150 mV I =-10mA, I =-1mA* CE(sat) C B Voltage -150 -200 mV I =-100mA, I =-10mA* C B -300 -400 mV I =-500mA, I =-100mA* C B Base-Emitter V -790 -900 mV I =-500mA, I =-100mA* BE(sat) C B Saturation Voltage 3-331 3-330 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX958 ZTX958 HIGH CURRENT TRANSISTOR ISSUE 3 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 0.5 Amp continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 1.5 Amps peak current Base-Emitter V -690 -800 mV IC=-500mA, V =-10V* BE(on) CE * Very low saturation voltage Turn-On Voltage * Excellent gain characteristics up to 1 Amp Static Forward h 100 200 I =-10mA, V =-10V* FE C CE * Spice model available C Current Transfer Ratio 100 200 300 I =-500mA, V =-10V* C CE B E 10 20 I =-1A, V =-10V* C CE Transition Frequency f 85 MHz I =-100mA, V =-10V T C CE E-Line f=50MHz TO92 Compatible Output Capacitance C 19 pF V =-20V, f=1MHz ABSOLUTE MAXIMUM RATINGS. obo CB Switching Times t 104 ns I =-500mA, I =-50mA PARAMETER SYMBOL VALUE UNIT on C B1 t 2400 ns I =50mA, V =-100V off B2 CC Collector-Base Voltage V -400 V CBO *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Collector-Emitter Voltage V -400 V CEO Emitter-Base Voltage V -6 V EBO THERMAL CHARACTERISTICS Peak Pulse Current I -1.5 A CM PARAMETER SYMBOL MAX. UNIT Continuous Collector Current I -0.5 A C Thermal Resistance: Junction to Ambient R 150 C/W Practical Power Dissipation* P 1.58 W th(j-amb) totp Junction to Case R 50 C/W th(j-case) Power Dissipation at T =25C P 1.2 W amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -400 -600 V I =-100A (BR)CBO C 4.0 D.C. Voltage 150 t1 D=t1/tP Collector-Emitter Breakdown V -400 -600 V IC=-1A, RB 1K (BR)CER 3.0 Voltag 100 t P Collector-Emitter Breakdown V -400 -550 V I =-10mA* (BR)CEO C D=0.6 2.0 Voltage Emitter-Base Breakdown V -6 -8 V I =-100A 50 (BR)EBO E D=0.2 Voltage 1.0 D=0.1 D=0.05 Collector Cut-Off Current I -50 nA V =-300V CBO CB Single Pulse 0 -1 A V =-300V, T =100C CB amb -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector Cut-Off Current I -50 nA V =-300V T -Temperature (C) Pulse Width (seconds) CER CB R 1K -1 A V =-300V, T =100C CB amb Derating curve Maximum transient thermal impedance Emitter Cut-Off Current I -10 nA V =-6V EBO EB Collector-Emitter Saturation V -100 -150 mV I =-10mA, I =-1mA* CE(sat) C B Voltage -150 -200 mV I =-100mA, I =-10mA* C B -300 -400 mV I =-500mA, I =-100mA* C B Base-Emitter V -790 -900 mV I =-500mA, I =-100mA* BE(sat) C B Saturation Voltage 3-331 3-330 Thermal Resistance (C/W)