s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX968 ZTX968 HIGH CURRENT TRANSISTOR ISSUE 2 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 4.5 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 20 Amps peak current Static Forward Current h 300 450 I =-10mA, V =-1V* FE C CE * Very low saturation voltage Transfer Ratio 300 450 1000 I =-500mA, V =-1V* C CE * High gain 200 300 I =-5A, V =-1V* C CE 150 240 I =-10A, V =-1V* * Spice model available C CE C B 50 I =-20A, V =-1V* C CE E Transition Frequency f 80 MHz I =-100mA, V =-10V T C CE E-Line f=50MHz TO92 Compatible Output Capacitance C 161 pF V =-20V, f=1MHz obo CB ABSOLUTE MAXIMUM RATINGS. Switching Times t 120 ns I =-4A, I =-400mA on C B1 PARAMETER SYMBOL VALUE UNIT t 116 ns I =400mA, V =-10V off B2 CC Collector-Base Voltage V -15 V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -6 V EBO THERMAL CHARACTERISTICS Peak Pulse Current I -20 A CM PARAMETER SYMBOL MAX. UNIT Continuous Collector Current I -4.5 A C Thermal Resistance: Junction to Ambient R 150 C/W Practical Power Dissipation* P 1.58 W totp th(j-amb) Junction to Case R 50 C/W th(j-case) Power Dissipation at T =25C P 1.2 W amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -15 -28 V I =-100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V -12 -20 V I =-10mA* (BR)CEO C t1 D=t1/tP Voltage 3.0 100 t Emitter-Base Breakdown V -6 -8 V I =-100A P (BR)EBO E Voltage D=0.6 2.0 Collector Cut-Off Current I -50 nA V =-12V CBO CB 50 -1 V =-12V, T =100C A D=0.2 CB amb 1.0 D=0.1 D=0.05 Emitter Cut-Off Current I -10 nA V =-6V EBO EB Single Pulse 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector-Emitter Saturation V -50 -100 mV I =-500mA, I =-5mA* CE(sat) C B T -Temperature (C) Pulse Width (seconds) Voltage -100 -150 mV I =-2A, I =-50mA* C B -220 -300 mV I =-5A, I =-200mA* C B Derating curve Maximum transient thermal impedance Base-Emitter V -930 -1050 mV I =-5A, I =-200mA* BE(sat) C B Saturation Voltage Base-Emitter V -830 -1000 mV IC=-5A, V =-1V* BE(on) CE Turn-On Voltage 3-334 3-333 Thermal Resistance (C/W) s) Max Power Dissipation - (Watt Case temperature Ambient temperature PNP SILICON PLANAR MEDIUM POWER ZTX968 ZTX968 HIGH CURRENT TRANSISTOR ISSUE 2 JUNE 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C) amb * 4.5 Amps continuous current PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * Up to 20 Amps peak current Static Forward Current h 300 450 I =-10mA, V =-1V* FE C CE * Very low saturation voltage Transfer Ratio 300 450 1000 I =-500mA, V =-1V* C CE * High gain 200 300 I =-5A, V =-1V* C CE 150 240 I =-10A, V =-1V* * Spice model available C CE C B 50 I =-20A, V =-1V* C CE E Transition Frequency f 80 MHz I =-100mA, V =-10V T C CE E-Line f=50MHz TO92 Compatible Output Capacitance C 161 pF V =-20V, f=1MHz obo CB ABSOLUTE MAXIMUM RATINGS. Switching Times t 120 ns I =-4A, I =-400mA on C B1 PARAMETER SYMBOL VALUE UNIT t 116 ns I =400mA, V =-10V off B2 CC Collector-Base Voltage V -15 V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% CBO Collector-Emitter Voltage V -12 V CEO Emitter-Base Voltage V -6 V EBO THERMAL CHARACTERISTICS Peak Pulse Current I -20 A CM PARAMETER SYMBOL MAX. UNIT Continuous Collector Current I -4.5 A C Thermal Resistance: Junction to Ambient R 150 C/W Practical Power Dissipation* P 1.58 W totp th(j-amb) Junction to Case R 50 C/W th(j-case) Power Dissipation at T =25C P 1.2 W amb tot Operating and Storage Temperature Range T :T -55 to +200 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated) amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown V -15 -28 V I =-100A (BR)CBO C Voltage 4.0 D.C. 150 Collector-Emitter Breakdown V -12 -20 V I =-10mA* (BR)CEO C t1 D=t1/tP Voltage 3.0 100 t Emitter-Base Breakdown V -6 -8 V I =-100A P (BR)EBO E Voltage D=0.6 2.0 Collector Cut-Off Current I -50 nA V =-12V CBO CB 50 -1 V =-12V, T =100C A D=0.2 CB amb 1.0 D=0.1 D=0.05 Emitter Cut-Off Current I -10 nA V =-6V EBO EB Single Pulse 0 -40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 Collector-Emitter Saturation V -50 -100 mV I =-500mA, I =-5mA* CE(sat) C B T -Temperature (C) Pulse Width (seconds) Voltage -100 -150 mV I =-2A, I =-50mA* C B -220 -300 mV I =-5A, I =-200mA* C B Derating curve Maximum transient thermal impedance Base-Emitter V -930 -1050 mV I =-5A, I =-200mA* BE(sat) C B Saturation Voltage Base-Emitter V -830 -1000 mV IC=-5A, V =-1V* BE(on) CE Turn-On Voltage 3-334 3-333 Thermal Resistance (C/W)