SOT323 PNP SILICON PLANAR ZUMT591 ZUMT591 HIGH PERFORMANCE TRANSISTOR DRAFT SPECIFICATION ISSUE A OCTOBER 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C). amb * Extremely low saturation voltage PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 500mW power dissipation E * 1 Amp continuous collector current (I ) C Static Forward Current h 100 I =-1mA, V =-5V* C FE C CE Transfer Ratio 100 300 I =-500mA, V =-5V* APPLICATIONS C CE 80 I =-1A, V =-5V* C CE * Ideally suited for space / weight critical applications B 15 I =-2A, V =-5V* C CE Transition Frequency f 150 MHz I =-50mA, V =-10V* T C CE SOT323 f=100MHz Ouput Capacitance C 10 pF V =-10V, f=1MHz ABSOLUTE MAXIMUM RATINGS. obo CB PARAMETER SYMBOL VALUE UNIT * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO NOTE Emitter-Base Voltage V -5 V EBO This data is derived from development material and does not necessarily mean that the device will go into production Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Base Current I -200 mA B Power Dissipation at T =25C P 500 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -80 V I =-100A, I =-0 (BR)CBO C E Breakdown Voltage Collector-Emitter V -60 V I =-10mA*, I =-0 CEO(sus) C B Breakdown Voltage Emitter-Base Breakdown V -5 V I =-100A, I =-0 (BR)EBO E C Voltage Zetex Semiconductors plc 2005 Collector Cut-Off Current I -100 nA V =-60V CBO CB Europe Americas Asia Pacific Corporate Headquarters Collector Cut-Off Current I -100 nA VCE=-60V CES Zetex GmbH Zetex Inc Zetex (Asia) Ltd Zetex Semiconductors plc Streitfeldstrae 19 700 Veterans Memorial Hwy 3701-04 Metroplaza Tower 1 Zetex Technology Park D-81673 Mnchen Hauppauge, NY 11788 Hing Fong Road, Kwai Fong Chadderton, Oldham, OL9 9LL Emitter Cut-Off Current I -100 nA V =-4V, I =-0 EBO EB C Germany USA Hong Kong United Kingdom Collector-Emitter V -0.3 V I =-500mA, I =-50mA* CE(sat) C B Telefon: (49) 89 45 49 49 0 Telephone: (1) 631 360 2222 Telephone: (852) 26100 611 Telephone (44) 161 622 4444 Saturation Voltage -0.6 V I =-1A, I =-100mA* Fax: (49) 89 45 49 49 49 Fax: (1) 631 360 8222 Fax: (852) 24250 494 Fax: (44) 161 622 4446 C B europe.sales zetex.com usa.sales zetex.com asia.sales zetex.com hq zetex.com Base-Emitter V -1.2 V I =-1A, I =-100mA* BE(sat) C B These offices are supported by agents and distributors in major countries world-wide. Saturation Voltage This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products Base-Emitter V -1.0 V IC=-1A, V =-5V* or services concerned. The Company reserves the right to alter without notice the specification, BE(on) CE design, price or conditions of supply of any product or service. Turn On Voltage For the latest product information, log on to www.zetex.com * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% SEMICONDUCTORSSOT323 PNP SILICON PLANAR ZUMT591 ZUMT591 HIGH PERFORMANCE TRANSISTOR DRAFT SPECIFICATION ISSUE A OCTOBER 94 FEATURES ELECTRICAL CHARACTERISTICS (at T = 25C). amb * Extremely low saturation voltage PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 500mW power dissipation E * 1 Amp continuous collector current (I ) C Static Forward Current h 100 I =-1mA, V =-5V* C FE C CE Transfer Ratio 100 300 I =-500mA, V =-5V* APPLICATIONS C CE 80 I =-1A, V =-5V* C CE * Ideally suited for space / weight critical applications B 15 I =-2A, V =-5V* C CE Transition Frequency f 150 MHz I =-50mA, V =-10V* T C CE SOT323 f=100MHz Ouput Capacitance C 10 pF V =-10V, f=1MHz ABSOLUTE MAXIMUM RATINGS. obo CB PARAMETER SYMBOL VALUE UNIT * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Collector-Base Voltage V -80 V CBO Collector-Emitter Voltage V -60 V CEO NOTE Emitter-Base Voltage V -5 V EBO This data is derived from development material and does not necessarily mean that the device will go into production Peak Pulse Current I -2 A CM Continuous Collector Current I -1 A C Base Current I -200 mA B Power Dissipation at T =25C P 500 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V -80 V I =-100A, I =-0 (BR)CBO C E Breakdown Voltage Collector-Emitter V -60 V I =-10mA*, I =-0 CEO(sus) C B Breakdown Voltage Emitter-Base Breakdown V -5 V I =-100A, I =-0 (BR)EBO E C Voltage Zetex Semiconductors plc 2005 Collector Cut-Off Current I -100 nA V =-60V CBO CB Europe Americas Asia Pacific Corporate Headquarters Collector Cut-Off Current I -100 nA VCE=-60V CES Zetex GmbH Zetex Inc Zetex (Asia) Ltd Zetex Semiconductors plc Streitfeldstrae 19 700 Veterans Memorial Hwy 3701-04 Metroplaza Tower 1 Zetex Technology Park D-81673 Mnchen Hauppauge, NY 11788 Hing Fong Road, Kwai Fong Chadderton, Oldham, OL9 9LL Emitter Cut-Off Current I -100 nA V =-4V, I =-0 EBO EB C Germany USA Hong Kong United Kingdom Collector-Emitter V -0.3 V I =-500mA, I =-50mA* CE(sat) C B Telefon: (49) 89 45 49 49 0 Telephone: (1) 631 360 2222 Telephone: (852) 26100 611 Telephone (44) 161 622 4444 Saturation Voltage -0.6 V I =-1A, I =-100mA* Fax: (49) 89 45 49 49 49 Fax: (1) 631 360 8222 Fax: (852) 24250 494 Fax: (44) 161 622 4446 C B europe.sales zetex.com usa.sales zetex.com asia.sales zetex.com hq zetex.com Base-Emitter V -1.2 V I =-1A, I =-100mA* BE(sat) C B These offices are supported by agents and distributors in major countries world-wide. Saturation Voltage This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products Base-Emitter V -1.0 V IC=-1A, V =-5V* or services concerned. The Company reserves the right to alter without notice the specification, BE(on) CE design, price or conditions of supply of any product or service. Turn On Voltage For the latest product information, log on to www.zetex.com * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% SEMICONDUCTORS