Super323 SOT323 NPN SILICON POWER ZUMT617 (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION *I CONT 1.5A C * 5A Peak Pulse Current * Excellent H Characteristics Up To 5A (pulsed) FE * Extremely Low Equivalent On Resistance R CE(sat) APPLICATIONS * DC-DC converter boost functions * Motor drive functions DEVICE TYPE COMPLEMENT PARTMARKING R CE(sat) ZUMT617 ZUMT717 T61 135m at 1.5A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 15 V CBO Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current** I 5A CM Continuous Collector Current I 1.5 A C Base Current I 200 mA B Power Dissipation at T =25C* P 385 mW amb tot 500 Operating and Storage Temperature T :T -55 to +150 C j stg Range Recommended Ptot calculated using FR4 measuring 10 x 8 x 0.6mm (still air). Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.ZUMT617 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 15 V I = 100A (BR)CBO C Breakdown Voltage Collector-Emitter V 15 V I = 10mA* (BR)CEO C Breakdown Voltage Emitter-Base V 5V I = 100A (BR)EBO E Breakdown Voltage Collector Cut-Off I 10 nA V = 10V CBO CB Current Emitter Cut-Off I 10 nA V = 4V EBO EB Current Collector Emitter I 10 nA V = 10V CES CES Cut-Off Current Collector-Emitter V 16.5 20 mV I = 100mA, I =10mA* CE(sat) C B Saturation Voltage 40 55 mV I = 250mA, I = 10mA* C B 75 100 mV I = 500mA, I =10mA* C B 150 200 mV I = 1A, I =10mA* C B 205 245 mV I = 1.5A, I =20mA* C B Base-Emitter V 930 1100 mV I = 1.5A, I =20mA* BE(sat) C B Saturation Voltage Base-Emitter Turn-On V 865 1100 mV I = 1.5A, V = 2V* C BE(on) CE Voltage Static Forward h 200 420 I = 10mA, V = 2V* FE C CE Current Transfer 300 450 I = 100mA, V = 2V* C CE Ratio 250 390 I = 500mA, V =2V* C CE 200 300 I = 1A, V =2 V* C CE 75 150 I = 3A, V =2V* C CE 30 75 I =5A, V = 2V* C CE Transition f 180 MHz I = 50mA, V = 10V T C CE Frequency f= 100MHz Output Capacitance C 15 pF V = 10V, f=1MHz obo CB Turn-On Time t 50 ns V = 10V, I = 1A (on) CC C I =I =100mA B1 B2 Turn-Off Time t 250 ns (off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%