Super323 SOT323 NPN SILICON ZUMT618 POWER(SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES * 500mW POWER DISSIPATION *I CONT 1.25A C * 3A Peak Pulse Current * Excellent H Characteristics Up to 3A (pulsed) FE * Extremely Low Equivalent On Resistance R CE(sat) APPLICATIONS * Corded telecoms. * Boost functions in DC-DC converters * Motor driver functions DEVICE TYPE COMPLEMENT PARTMARKING R CE(sat) ZUMT618 ZUMT718 T62 125m at1.25A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 20 V CBO Collector-Emitter Voltage V 20 V CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current** I 4A CM Continuous Collector Current I 1.25 A C Base Current I 500 mA B Power Dissipation at T =25C P 385 mW amb tot 500 Operating and Storage Temperature T :T -55 to +150 C j stg Range Recommended P calculated using FR4 measuring 10 x 8 x 0.6mm (still air). tot Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.ZUMT618 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 20 V I = 100A (BR)CBO C Breakdown Voltage Collector-Emitter V 20 V I = 10mA* (BR)CEO C Breakdown Voltage Emitter-Base V 5V I = 100A (BR)EBO E Breakdown Voltage Collector Cut-Off I 10 nA V = 16V CBO CB Current Emitter Cut-Off I 10 nA V = 4V EBO EB Current Collector Emitter I 10 nA V = 16V CES CES Cut-Off Current Collector-Emitter V 16.5 25 mV I = 100mA, I =10mA* CE(sat) C B Saturation Voltage 40 60 mV I = 250mA, I = 10mA* C B 80 115 mV I = 500mA, I =10mA* C B 140 200 mV I = 1A, I =20mA* C B 155 250 mV I = 1.25A, I =50mA* C B Base-Emitter V 955 1100 mV I = 1.25A, I =50mA* BE(sat) C B Saturation Voltage Base-Emitter V 840 1100 mV I = 1.25A, V = 2V* C BE(on) CE Turn-On Voltage Static Forward h 200 420 I = 10mA, V = 2V* FE C CE Current Transfer 300 450 I = 100mA, V = 2V* C CE Ratio 200 380 I = 500mA, V =2V* C CE 100 300 I = 1A, V =2 V* C CE 40 180 I = 2A, V =2V* C CE 20 60 I =4A, V = 2V* C CE Transition f 210 MHz I = 50mA, V =10V T C CE Frequency f= 100MHz Output Capacitance C 10 pF V = 10V, f=1MHz obo CB Turn-On Time t 50 ns V =10 V, I =1A (on) CC C I =I =100mA B1 B2 Turn-Off Time t 275 ns (off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%