Super32 3 SOT323 NPN SILICON POWER ZUMT619 (SWITCHING) TRANSISTOR ISSUE 2 - DECEMBER 2008 FEATURES * 500mW POWER DISSIPATION *I CONT 1A C * 2A Peak Pulse Current * Excellent H Characteristics Up To 2A (pulsed) FE * Extremely Low Equivalent On Resistance R CE(sat) APPLICATIONS * LCD backlighting inverter circuits * Boost functions in DC-DC converters DEVICE TYPE COMPLEMENT PARTMARKING R CE(sat) ZUMT619 ZUMT720 T63 160m at 1A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 50 V CEO Emitter-Base Voltage V 5V EBO Peak Pulse Current** I 2A CM Continuous Collector Current I 1.0 A C Base Current I 200 mA B Power Dissipation at T =25C P 385 mW amb tot 500 Operating and Storage Temperature T :T -55 to +150 C j stg Range Recommended P calculated using FR4 measuring 10 x 8 x 0.6mm (still air). tot Maximum power dissipation is calculated assuming that the device is mounted on FR4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.ZUMT619 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base V 50 V I = 100A (BR)CBO C Breakdown Voltage Collector-Emitter V 50 V I = 10mA* (BR)CEO C Breakdown Voltage Emitter-Base V 5V I = 100A (BR)EBO E Breakdown Voltage Collector Cut-Off I 10 nA V = 40V CBO CB Current Emitter Cut-Off I 10 nA V = 4V EBO EB Current Collector Emitter I 10 nA V = 40V CES CES Cut-Off Current Collector-Emitter V 24 35 mV I = 100mA, I = 10mA* CE(sat) C B Saturation Voltage 60 80 mV I = 250mA, I = 10mA* C B 120 200 mV I = 500mA, I = 10mA* C B 160 270 mV I = 1A, I = 50mA* C B Base-Emitter V 940 1100 mV I = 1A, I = 50mA* BE(sat) C B Saturation Voltage Base-Emitter V 850 1100 mV I = 1A, V = 2V* BE(on) C CE Turn-On Voltage Static Forward h 200 420 I =10mA, V = 2V* FE C CE Current Transfer 300 450 I = 100mA, V =2 V* C CE Ratio 200 350 I = 500mA, V =2V* C CE 75 130 I = 1A, V = 2V* C CE 20 60 I = 1.5A, V =2 V* C CE Transition f 215 MHz I = 50mA, V =10V T C CE Frequency f= 100MHz Output Capacitance C 6 pF V = 10V, f=1MHz obo CB Turn-On Time t 150 ns V =10 V, I = 1A (on) CC C I =I =100mA B1 B2 Turn-Off Time t 425 ns (off) *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%