Gate Threshold Voltage VGS(th) N-CHANNEL ENHANCEMENT ZVN3310A ZVN3310A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 100 Volt V DS 1.4 *R = 10 1.6 DS(on) VGS= 1.4 1.2 10V VGS= 9V 1.2 1.0 10V D 8V G 9V 1.0 S 0.8 8V 7V 0.8 7V E-Line 6V 0.6 6V 0.6 TO92 Compatible 5V 0.4 5V ABSOLUTE MAXIMUM RATINGS. 0.4 0.2 4V 4V PARAMETER SYMBOL VALUE UNIT 0.2 3V 3V 0 0 Drain-Source Voltage V 100 V DS 010 20 30 40 50 0 2 4 6810 Continuous Drain Current at T =25C I 200 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I 2A DM Output Characteristics Saturation Characteristics Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 625 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C 1.4 j stg 10 VDS= 1.2 25V ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 8 1.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 6 0.8 Drain-Source Breakdown BV 100 V I =1mA, V =0V DSS D GS ID= 0.6 Voltage 4 1A 0.4 Gate-Source Threshold V 0.8 2.4 V ID=1mA, V = V GS(th) DS GS 0.5A 2 Voltage 0.2 0.2A 0 Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS 0 0 2 4 6810 04 8 12 16 20 Zero Gate Voltage Drain I 1 V =100V, V =0 A DSS DS GS Current 50 A V =80V, V =0V, T=125C(2) VGS-Gate Source Voltage (Volts) DS GS VGS-Gate Source Voltage (Volts) Transfer Characteristics On-State Drain Current(1) I 500 mA V =25V, V =10V Voltage Saturation Characteristics D(on) DS GS Static Drain-Source On-State R 10 V =10V,I =500mA DS(on) GS D Resistance (1) 100 2.4 Forward Transconductance(1)(2g 100 mS V =25V,I =500mA fs DS D 2.2 ID=-0.5A ) 2.0 Input Capacitance (2) C 40 pF 1.8 iss 1.6 Common Source Output C 15 pF V =25V, V =0V, f=1MHz oss DS GS 10 1.4 Capacitance (2) ID= 1.2 1A Reverse Transfer Capacitance C 5pF 1.0 rss 0.5A 0.2A (2) 0.8 0.6 Turn-On Delay Time (2)(3) t 5ns d(on) 1 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 12345678910 20 Rise Time (2)(3) t 7ns r V 25V, I =500mA DD D VGS-Gate Source Voltage (Volts) T-Temperature (C) Turn-Off Delay Time (2)(3) t 6ns d(off) Normalised RDS(on) and VGS(th) vs Temperature Fall Time (2)(3) t 7ns On-resistance vs gate-source voltage f 3-379 3-378 -Source Resistance RDS(on) Drain RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps) Normalised RDS(on) and VGS(th) ID(On)-On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) I -On-State Drain Current (Amps) D(On) Normalised RDS(on) and VGS(th) ID(On)-On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) Gate Threshold Voltage VGS(th) N-CHANNEL ENHANCEMENT ZVN3310A ZVN3310A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 100 Volt V DS 1.4 *R = 10 1.6 DS(on) VGS= 1.4 1.2 10V VGS= 9V 1.2 1.0 10V D 8V G 9V 1.0 S 0.8 8V 7V 0.8 7V E-Line 6V 0.6 6V 0.6 TO92 Compatible 5V 0.4 5V ABSOLUTE MAXIMUM RATINGS. 0.4 0.2 4V 4V PARAMETER SYMBOL VALUE UNIT 0.2 3V 3V 0 0 Drain-Source Voltage V 100 V DS 010 20 30 40 50 0 2 4 6810 Continuous Drain Current at T =25C I 200 mA amb D VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Pulsed Drain Current I 2A DM Output Characteristics Saturation Characteristics Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 625 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C 1.4 j stg 10 VDS= 1.2 25V ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 8 1.0 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 6 0.8 Drain-Source Breakdown BV 100 V I =1mA, V =0V DSS D GS ID= 0.6 Voltage 4 1A 0.4 Gate-Source Threshold V 0.8 2.4 V ID=1mA, V = V GS(th) DS GS 0.5A 2 Voltage 0.2 0.2A 0 Gate-Body Leakage I 20 nA V = 20V, V =0V GSS GS DS 0 0 2 4 6810 04 8 12 16 20 Zero Gate Voltage Drain I 1 V =100V, V =0 A DSS DS GS Current 50 A V =80V, V =0V, T=125C(2) VGS-Gate Source Voltage (Volts) DS GS VGS-Gate Source Voltage (Volts) Transfer Characteristics On-State Drain Current(1) I 500 mA V =25V, V =10V Voltage Saturation Characteristics D(on) DS GS Static Drain-Source On-State R 10 V =10V,I =500mA DS(on) GS D Resistance (1) 100 2.4 Forward Transconductance(1)(2g 100 mS V =25V,I =500mA fs DS D 2.2 ID=-0.5A ) 2.0 Input Capacitance (2) C 40 pF 1.8 iss 1.6 Common Source Output C 15 pF V =25V, V =0V, f=1MHz oss DS GS 10 1.4 Capacitance (2) ID= 1.2 1A Reverse Transfer Capacitance C 5pF 1.0 rss 0.5A 0.2A (2) 0.8 0.6 Turn-On Delay Time (2)(3) t 5ns d(on) 1 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 12345678910 20 Rise Time (2)(3) t 7ns r V 25V, I =500mA DD D VGS-Gate Source Voltage (Volts) T-Temperature (C) Turn-Off Delay Time (2)(3) t 6ns d(off) Normalised RDS(on) and VGS(th) vs Temperature Fall Time (2)(3) t 7ns On-resistance vs gate-source voltage f 3-379 3-378 Drain-Source Resistance RDS(on) RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts)