X-On Electronics has gained recognition as a prominent supplier of ZVN4206GTA MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZVN4206GTA MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZVN4206GTA Diodes Incorporated

Hot ZVN4206GTA electronic component of Diodes Incorporated
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Part No.ZVN4206GTA
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: N-Channel 60 V 1A (Ta) 2W (Ta) Surface Mount SOT-223-3
Datasheet: ZVN4206GTA Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.483 ea
Line Total: USD 0.48 
Availability - 187
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.4258
2000 : USD 0.3985

1553
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 239
Multiples : 1
239 : USD 0.543
250 : USD 0.5343
500 : USD 0.4739
1000 : USD 0.4473

187
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.483
10 : USD 0.3909
30 : USD 0.3447
100 : USD 0.31
500 : USD 0.2823
1000 : USD 0.2685

1811
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9295
10 : USD 0.6765
100 : USD 0.5093
500 : USD 0.4323
1000 : USD 0.4059
2000 : USD 0.3905
5000 : USD 0.3894

1553
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 18
Multiples : 1
18 : USD 0.543

4850
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.3173
2000 : USD 0.293
5000 : USD 0.2902

970
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 0.4258
2000 : USD 0.3985

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the ZVN4206GTA from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZVN4206GTA and other electronic components in the MOSFETs category and beyond.

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ZVN4206G SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Product Summary Features and Benefits Max I D Compact Geometry V Max R (BR)DSS DS(on) T = +25C A Fast Switching Speeds 60V 1A 1 V = 10V GS No Secondary Breakdown and Excellent Temperature Stability High Input Impedance and Low Current Drive Ease of Paralleling Description and Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) DC-DC Converters Solenoid / Relay Drivers for Automotive Applications Stepper Motor Drivers and Print Head Drivers Mechanical Data Case: SOT223 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) SOT223 D G S Top View Pin Out Top-view Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging ZVN4206GTA Standard SOT223 1,000 ZVN4206GTC Standard SOT223 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVN4206G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage V V 20 GS Continuous Drain Current 1 A I D Pulsed Drain Current 8 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation at T =+25C P 2 W A tot Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV 60 V I = 1mA, V = 0V DSS D GS 10 V = 60V, V = 0V DS GS Zero Gate Voltage Drain Current I A DSS V = 48V, V = 0V , T=+125C DS GS 100 (Note 6) Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS Gate-Source Threshold Voltage V 1.3 3 V I = 1mA, V = V GS(th) D DS GS ON CHARACTERISTICS On-State Drain Current (Note 5) I 3 A V = 25V, V = 10V D(on) DS GS 1 V = 10V, I = 1.5A GS D Static Drain-Source On-State Resistance (Note 5) R DS (ON) 1.5 V = 5V, I = 0.5A GS D Forward Transconductance (Notes 5 & 6) 300 mS gfs VDS = 25V, ID = 1.5A DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) 100 pF Ciss V = 25 V, V = 0V DS GS Output Capacitance (Note 6) 60 pF C oss f = 1MHz Reverse Transfer Capacitance (Note 6) 20 pF C rss Turn-On Delay Time (Notes 6 & 7) 8 ns t d(on) Turn-On Rise Time (Notes 6 & 7) 12 ns t V 25V, V = 10V r DD GEN Turn-Off Delay Time (Notes 6 & 7) 12 Ns t I = 1.5A d(off) D Turn-Off Fall Time (Notes 6 & 7) t 15 Ns f Notes: 5. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 6. Sample test. 7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. 2 of 6 March 2015 ZVN4206G Diodes Incorporated www.diodes.com Datasheet Number: DS33363 Rev. 4 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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