ZVN4206G SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Product Summary Features and Benefits Max I D Compact Geometry V Max R (BR)DSS DS(on) T = +25C A Fast Switching Speeds 60V 1A 1 V = 10V GS No Secondary Breakdown and Excellent Temperature Stability High Input Impedance and Low Current Drive Ease of Paralleling Description and Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) DC-DC Converters Solenoid / Relay Drivers for Automotive Applications Stepper Motor Drivers and Print Head Drivers Mechanical Data Case: SOT223 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) SOT223 D G S Top View Pin Out Top-view Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging ZVN4206GTA Standard SOT223 1,000 ZVN4206GTC Standard SOT223 4,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVN4206G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage V V 20 GS Continuous Drain Current 1 A I D Pulsed Drain Current 8 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation at T =+25C P 2 W A tot Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV 60 V I = 1mA, V = 0V DSS D GS 10 V = 60V, V = 0V DS GS Zero Gate Voltage Drain Current I A DSS V = 48V, V = 0V , T=+125C DS GS 100 (Note 6) Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS Gate-Source Threshold Voltage V 1.3 3 V I = 1mA, V = V GS(th) D DS GS ON CHARACTERISTICS On-State Drain Current (Note 5) I 3 A V = 25V, V = 10V D(on) DS GS 1 V = 10V, I = 1.5A GS D Static Drain-Source On-State Resistance (Note 5) R DS (ON) 1.5 V = 5V, I = 0.5A GS D Forward Transconductance (Notes 5 & 6) 300 mS gfs VDS = 25V, ID = 1.5A DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) 100 pF Ciss V = 25 V, V = 0V DS GS Output Capacitance (Note 6) 60 pF C oss f = 1MHz Reverse Transfer Capacitance (Note 6) 20 pF C rss Turn-On Delay Time (Notes 6 & 7) 8 ns t d(on) Turn-On Rise Time (Notes 6 & 7) 12 ns t V 25V, V = 10V r DD GEN Turn-Off Delay Time (Notes 6 & 7) 12 Ns t I = 1.5A d(off) D Turn-Off Fall Time (Notes 6 & 7) t 15 Ns f Notes: 5. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 6. Sample test. 7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. 2 of 6 March 2015 ZVN4206G Diodes Incorporated www.diodes.com Datasheet Number: DS33363 Rev. 4 2 NEW PRODUCT