ZVN4210G SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Product Summary Mechanical Data I Case: SOT223 D BV R DSS DS(ON) T = +25C Case Material: Molded Plastic, Green Molding Compound. A UL Flammability Classification Rating 94V-0 100V 1.5 V = 10V 800mA GS Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Lead Frame. Features and Benefits Solderable per MIL-STD-202, Method 208 e3 Lead-Free Finish RoHS Compliant (Notes 1 & 2) Weight: 0.112 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT223 Equivalent Circuit Top View Pin Out - Top View Ordering Information (Note 4) Part Number Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel ZVN4210GTA ZVN4210 7 8 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVN4210G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current V = 10V T = +25C I 800 mA GS A D Pulsed Drain Current A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation T = +25C P 2 W A D Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV 100 V V = 0V, I =1mA DSS GS D 10 A V = 100V, V = 0V DS GS Zero Gate Voltage Drain Current I DSS 100 A V =80V, V =0V, T=125C (Note 6) DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS Gate Threshold Voltage 0.8 2.4 V V V = V , I = 1mA GS(TH) DS GS D 1.5 V = 10V, I = 1.5A GS D Static Drain-Source On-Resistance R DS(ON) 1.8 V = 5V, I = 0.5A GS D 0.79 I =0.32A, V =0V S GS Diode Forward Voltage (Note 5) V V SD 0.89 I =1.0A, V =0V S GS 2.5 On-State Drain Current (Note 5) A V =25V, V =10V ID(ON) DS GS 250 Forward Transconductance (Notes 5 and 6) mS V =25V,I =1.5A g DS D fs I =0.45A, V =0V, I =100mA, F GS R Reverse Recovery Time (to I =10%) t 135 ns R RR V =10V R DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance pF C 100 iss Output Capacitance pF C 40 V = 25V, V = 0V, f = 1MHz oss DS GS Reverse Transfer Capacitance pF C 12 rss 4 Turn-On Delay Time (Note 7) t ns D(ON) 8 Turn-On Rise Time (Note 7) t ns R V = 25V, I =1.5A DD D 20 Turn-Off Delay Time (Note 7) t ns D(OFF) 30 Turn-Off Fall Time (Note 7) t ns F Notes: 5. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 6. Sample test. 7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. Spice parameter data is available upon request for this device 2 of 5 ZVN4210G February 2015 Diodes Incorporated www.diodes.com Document Number DS33366 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT