Green ZVN4310G 100V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET IN SOT223 Features and Benefits Mechanical Data V > 100V Case: SOT223 (BR)DSS R 0.54 V = 10V Case Material: Molded Plastic, Green Molding Compound UL DS(ON) GS Maximum Continuous Drain Current I = 1.67A Flammability Classification Rating 94V-0 D Lead-Free Finish RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Matte Tin Finish Qualified to AEC-Q101 Standards for High Reliability Weight: 0.112 grams (Approximate) Applications DC-DC Converters Solenoids / Relay Driver for Automotive SOT223 D G S Top View Equivalent Circuit Pin Out - Top View Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZVN4310GTA ZVN4310 7 8 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVN4310G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current I 1.67 A D Pulsed Drain Current (Note 6) I 12 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 3 W D Thermal Resistance, Junction to Ambient (Note 5) R 41.7 C/W JA Thermal Resistance, Junction to Leads (Note 7) R 8.84 C/W JL Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 100 - - V BV V = 0V, I = 1mA DSS GS D 10 A V = 100V, V = 0V DS GS Zero Gate Voltage Drain Current T = +25C I - - J DSS 100 A V = 80V, V = 0V, T = +125C DS GS A Gate-Source Leakage I - - 20 nA V = 20V, V = 0V GSS GS DS On-State Drain Current I 9 - - A V = 10V, V = 10V D(ON) GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 - 3 V V = V , I = 1mA GS(TH) DS GS D 0.4 0.54 V = 10V, I = 3.3A GS D Static Drain-Source On-Resistance - R DS(ON) 0.5 0.75 V = 5V, I = 1.5A GS D Forward Transconductance 0.6 - - S g V = 10V, I = 3.3A fs DS D DYNAMIC CHARACTERISTICS (Note 8) - - 350 Input Capacitance C pF iss V = 25V, V = 0V, DS GS - - 140 Output Capacitance C pF oss f = 1.0MHz - - 20 Reverse Transfer Capacitance C pF rss - - 8 Turn-On Delay Time t ns D(ON) - - 25 Turn-On Rise Time t ns R V = 25V, I = 3A, V = 10V, DD D GEN - - 30 Turn-Off Delay Time ns R = 50 tD(OFF) GS Turn-Off Fall Time - - 16 ns t F Notes: 5. For a device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Thermal resistance from junction to solder-point (at the end of the drain lead). 8. Short duration pulse test used to minimize self-heating effect. 2 of 5 ZVN4310G February 2015 Diodes Incorporated www.diodes.com Document number: DS33372 Rev. 6 - 2