ZVP2110G Green SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Product Summary Mechanical Data Max I D Case: SOT223 V Max R (BR)DSS DS(on) T = +25C A Case Material: Molded Plastic, Green Molding Compound -100V -310mA 8 V = 10V GS UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Features and Benefits Terminals: Finish - Matte Tin Annealed over Copper Leadframe Lead-Free Finish RoHS Compliant (Notes 1 & 2) Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free. Green Device (Note 3) Weight: 0.112 grams (Approximate) SOT223 D G S Top View Pin Out Top-View Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging ZVP2110GTA Standard SOT223 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVP2110G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -100 V VDS Gate-Source Voltage 20 V V GS Continuous Drain Current -310 mA I D Pulsed Drain Current -3 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation at T = +25C P 2 W A tot Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV -100 V I = -1mA, V = 0V DSS D GS VDS = -100V, VGS = 0V -1 Zero Gate Voltage Drain Current I A DSS V = -80V, V = 0V , T = +125C DS GS -100 (Notes 6) Gate-Body Leakage -20 nA I V = 20V, V = 0V GSS GS DS Gate-Source Threshold Voltage -1.5 -3.5 V V I = -1mA, V = V GS(th) D DS GS ON CHARACTERISTICS On-State Drain Current (Note 5) I -750 mA D(on) V = -25V, V = -10V DS GS Static Drain-Source On-State Resistance (Note 5) 8 R V = -10V, I = -375mA DS (ON) GS D Forward Transconductance (Notes 5 & 6) 125 mS g V = -25V, I = -375mA fs DS D DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) 100 pF C iss V = -25 V, V = 0V DS GS Output Capacitance (Note 6) C 35 pF oss f = 1MHz Reverse Transfer Capacitance (Note 6) C 10 pF rss Turn-On Delay Time (Notes 6 & 7) t 7 ns d(on) Turn-On Rise Time (Notes 6 & 7) t 15 ns r V -25V, I = -375mA DD D Turn-Off Delay Time (Notes 6 & 7) 12 Ns td(off) Turn-Off Fall Time (Notes 6 & 7) 15 Ns t f Notes: 5. Measured under pulsed conditions. Width = 300s. Duty cycle 2%. 6. Sample Test. 7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. 2 of 5 March 2015 ZVP2110G Diodes Incorporated www.diodes.com Datasheet Number: DS33395 Rev. 3 - 2 NEW PRODUCT